# US 2014/0197404 A1 · Thin-Film Transistor Active Device

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- Number: US 2014/0197404 A1
- Document ID: US20140197404A1
- Status: Published application
- Kind: A1
- Application number: 13/806,718
- Filed: 2012-09-21
- Published: 2014-07-17
- Earliest claimed: 2012-09-11
- Assignees: Shenzhen China Star Optoelectronics Technology Co., Ltd.
- Applicants: Shenzhen China Star Optoelectronics Technology Co.
- Inventors: Chenglung Chiang; Polin Chen
- Web page: https://patentgrep.com/patent/US20140197404A1

## CPC

- H10D 86/60: wherein the TFTs are in active matrices
- H10D 30/6704: {having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device}
- H10D 30/6739: {Conductor-insulator-semiconductor electrodes}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10W 42/20: protecting against electromagnetic or particle radiation, e.g. light, X-rays, gamma-rays or electrons
- H10W 42/25: against alpha rays, e.g. for outer space applications
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention relates to a thin-film transistor (TFT) active device. The TFT active device includes: a gate electrode; a gate insulation layer covering the gate electrode; an oxide semiconductor layer formed on the gate insulation layer; a first protection layer formed on the oxide semiconductor layer; a source/drain electrode electrically connected with the oxide semiconductor layer; and a second protection layer covering the source/drain electrode. At least one of the gate insulation layer, the first protection layer, and the second protection layer is made of a nitride of silicon and has a refractive index between 2.0-3.0. The TFT active device according to the present invention helps suppressing diffusion of metal ions from a metal electrode and reducing hydrogen content of the GI layer, the ES layer, or the PV layer so as to effectively improve the stability of the manufacture operation of TFT.

## Claims

### Claim 1

A thin-film transistor (TFT) active device, comprising:
a gate electrode;
a gate insulation layer covering the gate electrode;
an oxide semiconductor layer formed on the gate insulation layer;
a first protection layer formed on the oxide semiconductor layer;
a source/drain electrode electrically connected with the oxide semiconductor layer; and
a second protection layer covering the source/drain electrode;
wherein at least one of the gate insulation layer, the first protection layer, and the second protection layer is made of a nitride of silicon and has a refractive index between 2.0-3.0.

### Claim 2 (depends on 1)

The TFT active device as claimed in claim 1, wherein the oxide semiconductor layer comprises at least one of an oxide of Zn, an oxide of Sn, an oxide of In, and an oxide of Ga.

### Claim 3 (depends on 1)

The TFT active device as claimed in claim 1, wherein the source/drain electrode comprises Cu or Al.

### Claim 4 (depends on 1)

The TFT active device as claimed in claim 1, wherein the first protection layer is arranged between the oxide semiconductor layer and the source/drain electrode.

### Claim 5 (depends on 1)

The TFT active device as claimed in claim 1, wherein the nitride of silicon is formed by applying plasma enhanced chemical vapor deposition to a mixed gas having a flow ratio of N2/(N2+SiH4) between 0.7-0.9.

### Claim 6 (depends on 1)

The TFT active device as claimed in claim 1, wherein the nitride of silicon has hydrogen content less than 5 atom %.

### Claim 7 (depends on 1)

The TFT active device as claimed in claim 1, wherein the first protection layer is an etch stop layer.

### Claim 8 (depends on 1)

The TFT active device as claimed in claim 1, wherein the second protection layer is a passivation layer.

### Claim 9 (depends on 1)

The TFT active device as claimed in claim 1, wherein the oxide semiconductor layer is an IGZO layer.

### Claim 10 (depends on 1)

The TFT active device as claimed in claim 1, wherein the TFT active device is a thin-film transistor of TFT-LCD (Liquid Crystal Display).

### Claim 11

A thin-film transistor (TFT) active device, comprising:
a gate electrode;
a gate insulation layer covering the gate electrode;
an oxide semiconductor layer formed on the gate insulation layer;
a first protection layer formed on the oxide semiconductor layer;
a source/drain electrode electrically connected with the oxide semiconductor layer; and
a second protection layer covering the source/drain electrode;
wherein at least one of the gate insulation layer, the first protection layer, and the second protection layer is made of a nitride of silicon and has a refractive index between 2.0-3.0;
wherein the oxide semiconductor layer comprises at least one of an oxide of Zn, an oxide of Sn, an oxide of In, and an oxide of Ga;
wherein the source/drain electrode comprises Cu or Al;
wherein the first protection layer is arranged between the oxide semiconductor layer and the source/drain electrode;
wherein the nitride of silicon is formed by applying plasma enhanced chemical vapor deposition to a mixed gas having a flow ratio of N2/(N2+SiH4) between 0.7-0.9;
wherein the nitride of silicon has hydrogen content less than 5 atom %;
wherein the first protection layer is an etch stop layer;
wherein the second protection layer is a passivation layer;
wherein the oxide semiconductor layer is an IGZO layer; and
wherein the TFT active device is a thin-film transistor of TFT-LCD (Liquid Crystal Display).

### Claim 12

A thin-film transistor (TFT) active device, comprising:
a gate electrode;
a gate insulation layer covering the gate electrode;
an oxide semiconductor layer formed on the gate insulation layer;
a source/drain electrode electrically connected with the oxide semiconductor layer; and
a protection layer covering the source/drain electrode;
wherein at least one of the gate insulation layer and the protection layer is made of a nitride of silicon and has a refractive index between 2.0-3.0.

### Claim 13 (depends on 12)

The TFT active device as claimed in claim 12, wherein the oxide semiconductor layer comprises at least one of an oxide of Zn, an oxide of Sn, an oxide of In, and an oxide of Ga.

### Claim 14 (depends on 12)

The TFT active device as claimed in claim 12, wherein the source/drain electrode comprises Cu or Al.

### Claim 15 (depends on 12)

The TFT active device as claimed in claim 12, wherein the nitride of silicon is formed by applying plasma enhanced chemical vapor deposition to a mixed gas having a flow ratio of N2/(N2+SiH4) between 0.7-0.9.

### Claim 16 (depends on 12)

The TFT active device as claimed in claim 12, wherein the nitride of silicon has hydrogen content less than 5 atom %.

### Claim 17 (depends on 12)

The TFT active device as claimed in claim 12, wherein the oxide semiconductor layer is an IGZO layer.

### Claim 18 (depends on 12)

The TFT active device as claimed in claim 12, wherein the TFT active device is a thin-film transistor of TFT-LCD (Liquid Crystal Display).