# US 2014/0197398 A1 · Dopant injection layers

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- Number: US 2014/0197398 A1
- Document ID: US20140197398A1
- Status: Published application
- Kind: A1
- Application number: 14/232,995
- Filed: 2012-08-02
- Published: 2014-07-17
- Earliest claimed: 2011-08-02
- Assignees: Sumitomo Chemical Company, Limited
- Inventors: John Devin MacKenzie; Eric Jones; Yuko Nakazawa
- Web page: https://patentgrep.com/patent/US20140197398A1

## CPC

- H10K 50/135: comprising mobile ions
- H10K 50/17: Carrier injection layers
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

The present invention uses an isopotential source layer for an electronic device, wherein the source layer provides ions of charge to be preferentially injected into an active layer of the electronic device, such that a charge of the injected ions has the same sign as the sign of a relative bias applied to the isopotential source layer. The source layer may comprise a composite ionic dopant injection layer having at least one component that has a relatively high diffusivity for ions. The composite ionic dopant injection layer may comprise metallic conductive particles and an ion supporting matrix. The composite ionic dopant injection layer may also comprise a continuous metallic conductive network and an ion supporting matrix. The metallic network comprises metallic nanowires or conductive nanotubes. The ion supporting matrix may comprise a conductive polymer.

## Claims

### Claim 1

An isopotential source layer for an electronic device, wherein the source layer provides ions of charge to be preferentially injected into an active layer of the electronic device, wherein a charge of the injected ions has the same sign as the sign of a relative bias applied to the isopotential source layer.

### Claim 2 (depends on 1)

An electronic device containing the isopotential source layer of claim 1, wherein the source layer comprises a composite ionic dopant injection layer having at least one component that has a relatively high diffusivity for ions.

### Claim 3 (depends on 2)

The device of claim 2, wherein the composite ionic dopant injection layer comprises metallic conductive particles and an ion supporting matrix.

### Claim 4 (depends on 2)

The device of claim 2, wherein the composite ionic dopant injection layer comprises a continuous metallic conductive network and an ion supporting matrix.

### Claim 5 (depends on 4)

The device of claim 4, wherein the metallic network comprises metallic nanowires or conductive nanotubes.

### Claim 6 (depends on 3)

The device of claim 3, wherein the ion supporting matrix comprises a conductive polymer.

### Claim 7 (depends on 2)

The device of any of claim 2, wherein the device comprises a transparent anode, a conducting polymer layer in contact with the transparent anode with additional mobile ion dopants adjacent to the active layer.

### Claim 8 (depends on 2)

The device of any of claim 2, wherein the device comprises a transparent cathode and a doped anode, the doped anode which being a composite of an electrically continuous network of metallic elements and an ion supporting matrix.