# US 2014/0197397 A1 · Organic semiconductor thin film transistor and method of fabricating the same

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- Number: US 2014/0197397 A1
- Document ID: US20140197397A1
- Status: Published application
- Kind: A1
- Application number: 14/218,126
- Filed: 2014-03-18
- Published: 2014-07-17
- Earliest claimed: 2005-11-29
- Assignees: LG Display Co., Ltd.
- Applicants: LG Display Co., Ltd.
- Inventors: Chang-Wook HAN
- Web page: https://patentgrep.com/patent/US20140197397A1

## CPC

- H10K 10/88: Passivation; Containers; Encapsulations
- H10K 10/464: {Lateral top-gate IGFETs comprising only a single gate}
- H10K 10/481: {characterised by the gate conductors}
- G02F 1/1368: in which the switching element is a three-electrode device {(G02F1/136277 takes precedence)}
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES
- G02F: OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS

## Abstract

A substrate having a thin film transistor includes a buffer layer on a substrate, source and drain electrodes on the buffer layer, a portion of the buffer layer exposed between the source and drain electrodes, a small organic semiconductor layer on the source electrode and the drain electrode, the organic semiconductor layer contacting the exposed portion of the buffer layer, a gate insulating layer on the organic semiconductor layer, the gate insulating layer having substantially the same size as the organic semiconductor layer, a gate electrode on the gate insulating layer, a passivation layer over the surface of the substrate including the gate electrode; and a pixel electrode on the passivation layer, the pixel electrode electrically connected to the drain electrode.

## Claims

### Claim 1

A thin film transistor, comprising:
source and drain electrodes on a substrate;
a small molecule organic semiconductor layer on the source and drain electrodes;
a gate insulating layer on the small molecule organic semiconductor layer and covering a top surface and lateral surfaces of the small molecule organic semiconductor layer; and
a gate electrode on the gate insulating layer,.
wherein a portion of the drain electrode is exposed by the small molecule organic semiconductor layer and the gate insulating layer.

### Claim 2 (depends on 1)

The film transistor according to claim 1, further comprising a buffer layer on the substrate.

### Claim 3 (depends on 2)

The film transistor according to claim 2, wherein a portion of the buffer layer exposed between the source and drain electrodes.

### Claim at position 4

4-6. (canceled)

### Claim 7 (depends on 2)

The thin film transistor according to claim 2, wherein the buffer layer includes one of an inorganic insulating material and an organic insulating material.

### Claim 8 (depends on 7)

The thin film transistor according to claim 7, wherein the inorganic insulating material includes one of silicon nitride (SiNx), silicon oxide (SiOx) and silicon oxynitride (SiOxNy).

### Claim 9 (depends on 7)

The thin film transistor according to claim 7, wherein the organic insulating material includes poly vinyl pyrrolidone (PVP), polyvinyl alcohol (PVA), benzocyclobutene (BCB), and poly methyl meta acrylate (PMMA).

### Claim 10 (depends on 1)

The thin film transistor according to claim 1, wherein the source and drain electrodes include one of a metallic material and an organic conductive material.

### Claim 11 (depends on 10)

The thin film transistor according to claim 10, wherein the metallic material includes one of gold (Au), indium tin oxide (ITO), nickel (Ni), lead (Pb), aluminum (Al), tantalum (Ta), and titanium (Ti).

### Claim 12 (depends on 10)

The thin film transistor according to claim 10, wherein the organic conductive material includes poly ethylene dioxy thiophene: poly styrene sulfonate (PEDOT:PSS).

### Claim 13 (depends on 1)

The thin film transistor according to claim 1, wherein the small molecule organic semiconductor layer includes pentacene (C22H14).

### Claim 14 (depends on 1)

The thin film transistor according to claim 1, wherein the gate insulating layer includes one of an inorganic insulating material and an organic material.

### Claim 15 (depends on 14)

The thin film transistor according to claim 14, wherein the inorganic insulating material includes one of silicon oxide (SiOx) and silicon nitride (SiNx).

### Claim 16 (depends on 14)

The thin film transistor according to claim 14, wherein the organic material includes one of poly vinyl alcohol (PVA) and polyimide.

### Claim 17 (depends on 1)

The thin film transistor according to claim 1, wherein the substrate includes one of plastic, glass, and metallic materials.

### Claim 18 (depends on 1)

The thin film transistor according to claim 1, further comprising a passivation layer having a first contact hole over the surface of the substrate.

### Claim 19 (depends on 18)

The thin film transistor according to claim 18, further comprising a pixel electrode on the passivation layer, electrically contacting the drain electrode via the first contact hole.

### Claim at position 18

20-37. (canceled)