# US 2014/0197382 A1 · Thin film transistor and display substrate having the same

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0197382 A1
- Document ID: US20140197382A1
- Status: Published application
- Kind: A1
- Application number: 13/940,865
- Filed: 2013-07-12
- Published: 2014-07-17
- Earliest claimed: 2013-01-15
- Assignees: Samsung Display Co., Ltd.
- Inventors: Jong Yun KIM; Taekyung AHN; YOUNGDAE KIM
- Web page: https://patentgrep.com/patent/US20140197382A1

## CPC

- H10D 30/6713: {characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes}
- C22C 27/04: Alloys based on tungsten or molybdenum
- H10D 30/6737: {characterised by the electrode materials}
- H10D 30/6743: {Silicon}
- H10D 30/675: {Group III-V materials, Group II-VI materials, Group IV-VI materials, selenium or tellurium}
- H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate}
- H10D 64/62: Electrodes ohmically coupled to a semiconductor
- H10D 86/423: {comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO}
- H10D 86/471: {having different architectures, e.g. having both top-gate and bottom-gate TFTs}
- H10D 86/481: {integrated with passive devices, e.g. auxiliary capacitors}
- H10D 86/60: wherein the TFTs are in active matrices
- H10K 59/1216: {the pixel elements being capacitors}
- H10K 59/1213: {the pixel elements being TFTs}
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES

## Abstract

A display substrate includes a base substrate, a semiconductor active layer disposed on the base substrate, a gate insulating layer disposed on the semiconductor active layer, a first conductive pattern group disposed on the gate insulating layer and including at least a gate electrode, a second conductive pattern group insulated from the first conductive pattern group and including at least a source electrode, a drain electrode, and a data pad. The second conductive pattern group includes a first conductive layer and a second conductive layer disposed on the first conductive layer to prevent the first conductive layer from being corroded and oxidized.

## Claims

### Claim 1

A thin film transistor, comprising:
a semiconductor active layer including a source region and a drain region;
a gate electrode insulated from the semiconductor active layer;
a source electrode contacted with the source region; and
a drain electrode contacted with the drain region,
each of the source and drain electrodes comprising:
a first conductive layer including one of copper, a copper alloy, aluminum, and an aluminum alloy; and
a second conductive layer disposed on the first conductive layer and including a molybdenum-nickel alloy.

### Claim 2 (depends on 1)

The thin film transistor of claim 1, wherein the molybdenum-nickel alloy contains nickel of about 10 at % to about 50 at % with respect to an aggregate of the molybdenum-nickel alloy.

### Claim 3 (depends on 1)

The thin film transistor of claim 1, wherein each of the source electrode and the drain electrode further comprises a third conductive layer disposed under the first conductive layer and including a same material as the second conductive layer.

### Claim 4 (depends on 3)

The thin film transistor of claim 3, wherein the second conductive layer and the third conductive layer comprise a molybdenum-nickel-titanium alloy.

### Claim 5 (depends on 4)

The display apparatus of claim 4, wherein the molybdenum-nickel-titanium alloy contains nickel of about 15 at % to about 30 at % with respect to an aggregate of the molybdenum-nickel-titanium alloy, and titanium of about 10 at % to about 20 at % with respect to the aggregate of the molybdenum-nickel-titanium alloy.

### Claim 6

A display substrate, comprising:
a base substrate;
a semiconductor active layer disposed on the base substrate;
a first conductive pattern group insulated from the semiconductor active layer and including at least a gate electrode;
a second conductive pattern group insulated from the first conductive pattern group and including at least a source electrode, a drain electrode, and a data pad; and
an organic light emitting device connected to the drain electrode;
the second conductive pattern group comprising a first conductive layer and a second conductive layer disposed on the first conductive layer to prevent the first conductive layer from being corroded and oxidized.

### Claim 7 (depends on 6)

The display substrate of claim 6, wherein the first conductive layer comprises one of copper, a copper alloy, aluminum, and an aluminum alloy.

### Claim 8 (depends on 7)

The display substrate of claim 7, wherein the second conductive layer comprises a molybdenum-nickel alloy.

### Claim 9 (depends on 8)

The display substrate of claim 8, wherein the molybdenum-nickel alloy contains nickel of about 10 at % to about 50 at % with respect to an aggregate of the molybdenum-nickel alloy.

### Claim 10 (depends on 8)

The display substrate of claim 8, wherein the second conductive pattern group further comprises a third conductive layer disposed under the first conductive layer and including a same material as the second conductive layer.

### Claim 11 (depends on 10)

The display substrate of claim 10, wherein the second conductive layer and the third conductive layer comprise a molybdenum-nickel-titanium alloy.

### Claim 12 (depends on 11)

The display substrate of claim 11, wherein the molybdenum-nickel-titanium alloy contains nickel of about 15 at % to about 30 at % with respect to an aggregate of the molybdenum-nickel-titanium alloy, and titanium of about 10 at % to about 20 at % with respect to the aggregate of the molybdenum-nickel-titanium alloy.

### Claim 13 (depends on 6)

The display substrate of claim 6, wherein the semiconductor active layer comprises a semiconductor oxide.

### Claim 14 (depends on 13)

The display substrate of claim 13, wherein the semiconductor oxide comprises at least one of Zn, In, Ga, Sn, and a mixture thereof.

### Claim 15

A display substrate comprising:
a base substrate;
a first thin film transistor disposed on the base substrate;
a second thin film transistor disposed on the base substrate and electrically connected to the first thin film transistor; and
an organic light emitting device connected to the second thin film transistor;
wherein the first thin film transistor comprises a first semiconductor active layer, a first gate electrode, a first source electrode, and a first drain electrode;
wherein the second thin film transistor comprises a second semiconductor active layer, a second gate electrode, a second source electrode, and a second drain electrode;
wherein the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode are disposed on a same layer; and
wherein each of the first source electrode, the first drain electrode, the second source electrode, and the second drain electrode comprises:
a first conductive layer that includes one of copper, a copper alloy, aluminum, and an aluminum alloy; and
a second conductive layer disposed on the first conductive layer and including a molybdenum-nickel alloy.

### Claim 16 (depends on 15)

The display substrate of claim 15, further comprising a third conductive layer disposed under the first conductive layer and including a same material as the second conductive layer.

### Claim 17 (depends on 16)

The display substrate of claim 16, wherein the second conductive layer and the third conductive layer comprise a molybdenum-nickel-titanium alloy.

### Claim 18 (depends on 16)

The display substrate of claim 16, wherein at least one of the first semiconductor active layer and the second semiconductor active layer comprises a semiconductor oxide.

### Claim 19 (depends on 18)

The display substrate of claim 18, wherein the semiconductor oxide comprises at least one of Zn, In, Ga, Sn, and a mixture thereof.

### Claim 20 (depends on 15)

The display substrate of claim 15, further comprising:
a gate insulating layer disposed between the first semiconductor active layer and the first gate electrode, and between the second semiconductor active layer and the second gate electrode; and
an inter-insulating layer disposed on the gate electrode;
wherein the first and second semiconductor active layers are disposed on the base substrate.

### Claim 21 (depends on 15)

The display substrate of claim 15, further comprising:
a gate insulating layer disposed between the first semiconductor active layer and the first gate electrode;
a first inter-insulating layer that covers the first gate electrode; and
a second inter-insulating layer disposed on the first inter-insulating layer;
wherein the first semiconductor active layer is disposed on the base substrate, the first and second gate electrodes are disposed on the gate insulating layer, and the second semiconductor active layer is disposed on the first inter-insulating layer.

### Claim 22 (depends on 15)

The display substrate of claim 15, further comprising a gate insulating layer disposed between the first semiconductor active layer and the first gate electrode and between the second semiconductor active layer and the second gate electrode, wherein the first and second semiconductor active layers are disposed on the gate insulating layer.