# US 2014/0197374 A1 · Method for manufacturing a nitride semiconductor light emitting device and nitride semiconductor light emitting device manufactured thereby > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197374 A1 - Document ID: US20140197374A1 - Status: Published application - Kind: A1 - Application number: 14/239,231 - Filed: 2011-08-17 - Published: 2014-07-17 - Earliest claimed: 2011-08-17 - Assignees: Samsung Electronics Co., Ltd. - Inventors: Seok Min Hwang; Jin Bock Lee; Tae Sung Jang; Jong Gun Woo - Web page: https://patentgrep.com/patent/US20140197374A1 ## CPC - H10H 20/835: {Reflective materials} - H10H 20/032: {of electrodes} - H10H 20/84: Coatings, e.g. passivation layers or antireflective coatings - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS ## Abstract There is provided a method of manufacturing a nitride semiconductor light emitting device, the method including: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first conductivity-type nitride semiconductor layer, an active layer and a second conductivity-type nitride semiconductor layer sequentially stacked on a substrate; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film. ## Claims ### Claim 1 A method of manufacturing a nitride semiconductor light emitting device, the method comprising: forming a light emitting structure on a substrate, the light emitting structure including first and second conductivity-type nitride semiconductor layers with an active layer interposed therebetween; forming a first electrode to be connected to the first conductivity-type nitride semiconductor layer; forming a photoresist film on the second conductivity-type nitride semiconductor layer to expose a portion of the second conductivity-type nitride semiconductor layer; and forming a reflective metal layer and a barrier metal layer as a second electrode consecutively on the portion of the second conductivity-type nitride semiconductor layer exposed by the photoresist film and removing the photoresist film. ### Claim 2 (depends on 1) The method of claim 1, wherein the forming of the reflective metal layer and the barrier metal layer includes: forming the reflective metal layer; and consecutively forming the barrier metal layer to cover top and side surfaces of the reflective metal layer in a state of maintaining the photoresist film. ### Claim 3 (depends on 1) The method of claim 1, wherein the forming of the reflective metal layer and the barrier metal layer includes: forming the reflective metal layer through e-beam evaporation; and forming the barrier metal layer through sputter deposition. ### Claim 4 (depends on 1) The method of claim 1, wherein the forming of the reflective metal layer and the barrier metal layer includes: depositing the reflective metal layer using an e-beam evaporator having a first stack coverage; and depositing the barrier metal layer using a sputter having a second stack coverage higher than the first stack coverage. ### Claim 5 (depends on 1) The method of claim 1, wherein the forming of the reflective metal layer and the barrier metal layer includes: depositing the reflective metal layer using an e-beam evaporator having a first stack coverage; and depositing the barrier metal layer using an e-beam evaporator having a second stack coverage higher than the first stack coverage. ### Claim 6 (depends on 1) The method of claim 1, wherein the barrier metal layer is formed to cover top and side surfaces of the reflective metal layer such that a portion thereof covering the top surface is thicker than a portion thereof covering the side surfaces. ### Claim 7 (depends on 1) The method of claim 1, further comprising forming a passivation layer on an entirety of a top surface of the light emitting structure. ### Claim 8 (depends on 1) The method of claim 1, wherein the photoresist film is formed of a negative photoresist. ### Claim 9 (depends on 1) The method of claim 1, further comprising forming a bonding metal layer on the barrier metal layer. ### Claim 10 A nitride semiconductor light emitting device, comprising: first and second conductivity-type nitride semiconductor layers; an active layer interposed between the first and second conductivity-type nitride semiconductor layers; a first electrode electrically connected to the first conductivity-type nitride semiconductor layer; and a second electrode including a reflective metal layer formed on the second conductivity-type nitride semiconductor layer, and a barrier metal layer formed to cover top and side surfaces of the reflective metal layer while a portion thereof covering the top surface is thicker than a portion thereof covering the side surfaces. ### Claim 11 (depends on 10) The nitride semiconductor light emitting device of claim 10, wherein the first and second conductivity-type nitride semiconductor layers and the active layer are formed on a substrate having light transmissive and electrical insulating properties. ### Claim 12 (depends on 10) The nitride semiconductor light emitting device of claim 10, further comprising a conductive support substrate formed on the second electrode, wherein the first electrode is formed on a surface of the first conductivity-type nitride semiconductor layer in a direction opposite to the second conductivity-type nitride semiconductor layer. ### Claim 13 (depends on 10) The nitride semiconductor light emitting device of claim 10, further comprising at least one conductive via penetrating through the active layer and the second conductivity-type nitride semiconductor layer to be connected to the first conductivity-type nitride semiconductor layer, wherein the first electrode is connected to the conductive via and is externally exposed. ### Claim 14 (depends on 10) The nitride semiconductor light emitting device of claim 10, further comprising a bonding metal layer formed on the barrier metal layer.