# US 2014/0197372 A1 · Light emitting device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197372 A1 - Document ID: US20140197372A1 - Status: Published application - Kind: A1 - Application number: 14/153,339 - Filed: 2014-01-13 - Published: 2014-07-17 - Earliest claimed: 2013-01-14 - Assignees: LG Innotek Co., Ltd. - Inventors: Hwan Hee JEONG - Web page: https://patentgrep.com/patent/US20140197372A1 ## CPC - H10H 20/8312: {extending at least partially through the bodies} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10H 20/8316: {Multi-layer electrodes comprising at least one discontinuous layer} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A light emitting device includes a light emitting structure having a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer. A first electrode is electrically connected to the first conductive semiconductor layer and is provided under the light emitting structure, and a second electrode is electrically connected to the second conductive semiconductor layer and is provided under the light emitting structure. A first contact portion is provided through the light emitting structure and includes a first region electrically connected to the first electrode. A second region contacts a top surface of the first conductive semiconductor layer, and an insulating ion implantation layer is provided around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer. ## Claims ### Claim 1 A light emitting device comprising: a light emitting structure comprising a first conductive semiconductor layer, an active layer under the first conductive semiconductor layer, and a second conductive semiconductor layer under the active layer; a first electrode electrically connected to the first conductive semiconductor layer and provided under the light emitting structure; a second electrode electrically connected to the second conductive semiconductor layer and provided under the light emitting structure; a first contact portion provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer; and an insulating ion implantation layer provided around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer. ### Claim 2 (depends on 1) The light emitting device of claim 1, further comprising a second contact portion spaced apart from the light emitting structure and electrically connected to the second electrode. ### Claim 3 (depends on 1) The light emitting device of claim 1, wherein the first contact portion is provided through the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer. ### Claim 4 (depends on 1) The light emitting device of claim 1, wherein a bottom surface of the first contact portion is arranged on the same plane with a bottom surface of the second conductive semiconductor layer. ### Claim 5 (depends on 1) The light emitting device of claim 1, wherein a bottom surface of the first electrode is provided lower than a bottom surface of the second electrode. ### Claim 6 (depends on 1) The light emitting device of claim 1, wherein the second electrode comprises an ohmic contact layer and a reflective layer. ### Claim 7 (depends on 1) The light emitting device of claim 1, wherein the insulating ion implantation layer is provided between the active layer and the first contact portion. ### Claim 8 (depends on 1) The light emitting device of claim 1, wherein the insulating ion implantation layer is provided through the active layer and the second conductive semiconductor layer. ### Claim 9 (depends on 1) The light emitting device of claim 1, wherein a top surface of the first electrode is arranged on the same plane with a top surface of the second electrode. ### Claim 10 (depends on 1) The light emitting device of claim 1, further comprising a channel layer exposed at a lower peripheral portion of the light emitting structure and making contact with a bottom surface of the second conductive semiconductor layer. ### Claim 11 (depends on 1) The light emitting device of claim 1, wherein the insulating ion implantation layer is formed by implanting at least one of an N ion, an O ion, or an Ar ion. ### Claim 12 (depends on 1) The light emitting device of claim 1, further comprising an insulating layer between the first electrode and second electrode. ### Claim 13 (depends on 12) The light emitting device of claim 12, wherein a top surface of the insulating layer makes contact with a bottom surface of the insulating ion implantation layer. ### Claim 14 (depends on 1) The light emitting device of claim 1, wherein the first contact portion comprises a conductive ion implantation layer. ### Claim 15 (depends on 14) The light emitting device of claim 14, wherein the conductive ion implantation layer is formed by implanting at least one of a Ti ion, an Al ion, or an Au ion. ### Claim 16 (depends on 1) The light emitting device of claim 1, wherein the first contact portion disposed in the light emitting structure has a width in a range of 3 μm to 5 μm. ### Claim 17 A light emitting device comprising: a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer and provided under the light emitting structure; a second electrode electrically connected to the second conductive semiconductor layer and provided under the light emitting structure; a plurality of first contact portions provided through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer; and an insulating ion implantation layer provided around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer, wherein the first contact portions are spaced apart from each other and provided on a top surface of the first conductive semiconductor layer. ### Claim 18 (depends on 17) The light emitting device of claim 17, further comprising a second contact portion spaced apart from the light emitting structure and electrically connected to the second electrode. ### Claim 19 (depends on 17) The light emitting device of claim 17, wherein the first contact portions are disposed through the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer. ### Claim 20 A light emitting device comprising: a light emitting structure comprising a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer and provided under the light emitting structure; a second electrode electrically connected to the second conductive semiconductor layer and provided under the light emitting structure; a plurality of first contact portions disposed through the light emitting structure and including a first region electrically connected to the first electrode and a second region making contact with a top surface of the first conductive semiconductor layer; and an insulating ion implantation layer disposed around the first contact portion to insulate the first contact portion from the second conductive semiconductor layer, wherein the insulating ion implantation layer is provided through the active layer and the second conductive semiconductor layer, and wherein the plurality of first contact portions have widths in a range of about 3 μm to about 5 μm.