# US 2014/0197356 A1 · Cmp compositions and methods for suppressing polysilicon removal rates

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- Number: US 2014/0197356 A1
- Document ID: US20140197356A1
- Status: Published application
- Kind: A1
- Application number: 14/217,535
- Filed: 2014-03-18
- Published: 2014-07-17
- Earliest claimed: 2011-12-21
- Applicants: Cabot Microelectronics Corporation
- Inventors: Kevin MOEGGENBORG; William Ward; Ming-Shih Tsai; Francesco De Rege Thesauro
- Web page: https://patentgrep.com/patent/US20140197356A1

## CPC

- C09G 1/02: containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)}
- H10P 52/403: {of conductive or resistive materials}
- H10P 95/062: {involving a dielectric removal step}
- C09G: POLISHING COMPOSITIONS (French polish C09F11/00); SKI WAXES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

The present invention provides a chemical-mechanical polishing (CMP) composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate. The composition comprises abrasive particles suspended in an acidic aqueous carrier containing a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof. Methods of polishing a semiconductor substrate therewith are also disclosed.

## Claims

### Claim 1

A chemical-mechanical polishing composition suitable for polishing a silicon nitride-containing substrate while suppressing polysilicon removal from the substrate, the composition comprising about 0.01 to about 15 percent by weight abrasive particles suspended in an aqueous carrier containing about 10 to about 10,000 ppm of a surfactant comprising an alkyne-diol, an alkyne diol ethoxylate, or a combination thereof.

### Claim 2 (depends on 1)

The composition of claim 1 wherein the aqueous carrier has a pH up to about 10.

### Claim 3 (depends on 1)

The composition of claim 1 wherein the aqueous carrier has a pH in the range of about 1 to about 4.

### Claim 4 (depends on 1)

The composition of claim 1 wherein the abrasive particles comprise colloidal silica.

### Claim 5 (depends on 1)

The composition of claim 1 further comprising about 10 to about 100,000 ppm of at least one carboxylic acid-containing additive.

### Claim 6 (depends on 5)

The composition of claim 5 wherein the at least one carboxylic acid-containing additive comprises malonic acid, glycine, or a combination thereof.

### Claim 7 (depends on 1)

The composition of claim 1 wherein the surfactant is present at a concentration in the range of about 20 to about 1,000 ppm.

### Claim 8 (depends on 1)

The composition of claim 1 wherein the surfactant comprises an alkyne diol compound of Formula (I) and/or an ethoxylate thereof comprising about 1 to about 40 moles of ethyleneoxy units per mole of alkyne diol compound;
wherein
each of R1 and R2 is independently H or methyl; and
each of R3 and R4 is independently a C1 to C22 alkyl group.

### Claim 9 (depends on 1)

The composition of claim 1 further comprising an organic or inorganic salt additive.

### Claim 10 (depends on 9)

The composition of claim 9 wherein the salt additive comprises potassium sulfate.