# US 2014/0197326 A1 · Charged particle beam writing method

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0197326 A1
- Document ID: US20140197326A1
- Status: Published application
- Kind: A1
- Application number: 14/149,478
- Filed: 2014-01-07
- Published: 2014-07-17
- Earliest claimed: 2013-01-16
- Assignees: NuFlare Technology, Inc.
- Applicants: Nuflare Technology, Inc.
- Inventors: Takayuki OHNISHI
- Web page: https://patentgrep.com/patent/US20140197326A1

## CPC

- H01J 37/3174: {Particle-beam lithography, e.g. electron beam lithography}
- B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
- B82Y 40/00: Manufacture or treatment of nanostructures
- H01J 37/045: {Beam blanking or chopping, i.e. arrangements for momentarily interrupting exposure to the discharge}
- H01J 2237/31776: Shaped beam
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES

## Abstract

A charged particle beam writing method comprising, an irradiation step of irradiating a sample with a charged particle beam emitted from a charged particle source, a first blanking step of performing the blanking while the charged particle beam is moved in a first direction from a position of the charged particle beam in the irradiation step; and a second blanking step of performing the blanking the charged particle beam is moved in a second direction opposite to the first direction from the position of the charged particle beam in the irradiation step.

## Claims

### Claim 1

A charged particle beam writing method comprising:
an irradiation step of irradiating a sample with a charged particle beam emitted from a charged particle source;
a first blanking step of performing the blanking while the charged particle beam is moved in a first direction from a position of the charged particle beam in the irradiation step; and
a second blanking step of performing the blanking the charged particle beam is moved in a second direction opposite to the first direction from the position of the charged particle beam in the irradiation step.

### Claim 2 (depends on 1)

The charged particle beam writing method according to claim 1, wherein the first blanking step and the second blanking step are alternately provided with the irradiation step interposed therebetween.

### Claim 3 (depends on 1)

The charged particle beam writing method according to claim 1, wherein a moving speed of the charged particle beam in the first blanking step is substantially equal to a moving speed of the charged particle beam in the second blanking step.

### Claim 4 (depends on 1)

The charged particle beam writing method according to claim 1, wherein in the first blanking step the blanking is performed using a first blanking deflector and a blanking aperture located a distance ha away from the first blanking deflector;
the second blanking step is performed using the second blanking deflector and the blanking aperture located a distance hb away from the second blanking deflector,
wherein the first blanking deflector, second blanking deflector and blanking aperture, are sequentially provided from a side of the charged particle source between the charged particle source and the sample; and
a blanking voltage applied to the second blanking deflector in the second blanking step is larger than a blanking voltage applied to the first blanking deflector in the first blanking step by a factor of (ha/hb).

### Claim 5 (depends on 1)

The charged particle beam writing method according to claim 1, wherein the charged particle beam is an electron beam, and the electron beam has a current density of 1000 A/cm2 or more.