# US 2014/0197136 A1 · High Efficiency Plasma Source > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197136 A1 - Document ID: US20140197136A1 - Status: Published application - Kind: A1 - Application number: 14/239,201 - Filed: 2012-07-30 - Published: 2014-07-17 - Earliest claimed: 2011-08-19 - Assignees: Mattson Technology, Inc. - Inventors: Vladimir Nagorny; Charles Crapuchettes - Web page: https://patentgrep.com/patent/US20140197136A1 ## CPC - H01J 37/321: {the radio frequency energy being inductively coupled to the plasma} - H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream} - H01J 37/3244: {Gas supply means} - H05H 1/46: using applied electromagnetic fields, e.g. high frequency or microwave energy (H05H1/26 takes precedence) - H05H 1/4652: {using inductive coupling means, e.g. coils} - H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H) - H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS ## Abstract A plasma reactor and method for improved gas injection for an inductive plasma source for dry strip plasma processing are disclosed. According to embodiments of the present disclosure, gas is fed into a plasma chamber through a gas injection channel located adjacent to the side wall of the plasma chamber, rather than from the center, so that the process gas enters the plasma chamber in a close proximity to the induction coil. In particular embodiments, the process gas that enters the chamber is forced to pass through a reactive volume or active region adjacent the induction coil where efficient heating of electrons occurs, providing increased efficiency of the reactor by improving process gas flow and confinement in the heating area. ## Claims ### Claim 1 A plasma reactor for processing a substrate, comprising: a processing chamber having a substrate holder operable to hold the substrate; a plasma chamber separate from said processing chamber for generating a plasma to be used in processing the substrate, said plasma chamber having a ceiling and a dielectric side wall defining a plasma chamber interior; an induction coil adjacent said plasma chamber about said dielectric side wall; and a gas injection insert disposed within the plasma chamber interior; wherein said gas injection insert and said side wall define a narrow gas injection channel adjacent said dielectric side wall for providing a process gas to said plasma chamber interior proximate said induction coil. ### Claim 2 (depends on 1) The plasma reactor of claim 1, wherein the gas injection insert defines an active region with enhanced electron confinement adjacent to the induction coil for heating of electrons, the gas injection channel providing the process gas to the active region. ### Claim 3 (depends on 1) The plasma reactor of claim 1, wherein the gas injection insert comprises a metal material. ### Claim 4 (depends on 1) The plasma reactor of claim 1, wherein the gas injection insert comprises a dielectric material. ### Claim 5 (depends on 1) The plasma reactor of claim 1, wherein the gas injection insert comprises a hollow portion. ### Claim 6 (depends on 2) The plasma reactor of claim 2, wherein the gas injection insert comprises a dielectric ring portion, the dielectric ring portion defining at least a portion of the gas injection channel. ### Claim 7 (depends on 1) The plasma reactor of claim 1, wherein the gas injection channel has a length in the range of about 2 cm to about 10 cm. ### Claim 8 (depends on 1) The plasma reactor of claim 1, wherein the gas injection channel has a width of about 1 mm to about 3 mm. ### Claim 9 (depends on 2) The plasma reactor of claim 2, wherein the active region has a width in the range of about 20 mm to about half the radius of the source and a length in the range of about 35 mm to about 100 mm. ### Claim 10 (depends on 1) The plasma reactor of claim 1, wherein the gas injection insert comprises a tube. ### Claim 11 A method for generating a plasma for processing a substrate, comprising: placing a substrate in a processing chamber, the processing chamber separate from a plasma chamber for generating a plasma to be used in processing the substrate; energizing an induction coil located adjacent a dielectric sidewall of the plasma chamber to generate a substantially inductive plasma in a plasma chamber interior; and providing process gas to the plasma chamber interior proximate the induction coil through a narrow gas injection channel defined by the sidewall of plasma chamber and a gas injection insert disposed in the plasma chamber interior. ### Claim 12 (depends on 11) The method of claim 11, wherein providing process gas to the plasma chamber further comprises providing the gas into an active region defined by the gas injection insert adjacent to the induction coil, the active region providing enhanced electron confinement. ### Claim 13 (depends on 12) The method of claim 12, wherein the gas injection insert comprises a dielectric ring portion. ### Claim 14 (depends on 11) The method of claim 11, wherein the gas injection insert comprises a hollow portion. ### Claim 15 (depends on 11) The method of claim 11, wherein the gas injection insert comprises a metal. ### Claim 16 (depends on 11) The method of claim 11, wherein the gas injection channel has a length in the range of about 2 cm to about 10 cm and a width in the range of about 1 mm to about 3 mm. ### Claim 17 (depends on 12) The method of claim 12, wherein the active region has a width in the range of about 20 mm to about 45 mm and a length in the range of about 35 mm to about 100 mm. ### Claim 18 A plasma reactor for processing a substrate, comprising: a processing chamber having a substrate holder operable to hold the substrate; a plasma chamber separate from said processing chamber for generating a plasma to be used in processing the substrate, said plasma chamber having a ceiling and a dielectric side wall defining a plasma chamber interior; an induction coil adjacent said plasma chamber about said dielectric side wall; and a gas injection insert disposed within the plasma chamber interior, said gas injection insert and said side wall defining a narrow gas injection channel adjacent said dielectric side wall for providing a process gas to said plasma chamber interior proximate said induction coil, the gas injection insert further defining an active region with enhanced electron confinement adjacent the induction coil, the narrow gas injection channel providing the process gas to the active region adjacent the induction coil; wherein the narrow gas injection channel has a width in the range of about 1 mm to about 3 mm and length in the range of about 2 cm to about 10 cm, and the active region has a width in the range of about 20 mm to about 45 mm and a length in the range of about 35 mm to about 100 mm. ### Claim 19 (depends on 18) The plasma reactor of claim 18, wherein the gas injection insert comprises a dielectric ring portion. ### Claim 20 (depends on 19) The plasma reactor of claim 19, wherein the dielectric ring portion has a length in the range of about 0.5 cm to about 10 cm.