# US 2014/0197135 A1 · Plasma processing method and plasma processing apparatus

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- Number: US 2014/0197135 A1
- Document ID: US20140197135A1
- Status: Published application
- Kind: A1
- Application number: 14/154,385
- Filed: 2014-01-14
- Published: 2014-07-17
- Earliest claimed: 2013-01-15
- Assignees: Tokyo Electron Limited
- Applicants: Tokyo Electron Limited
- Inventors: Takayuki Katsunuma; Masanobu Honda; Hironobu Ichikawa
- Web page: https://patentgrep.com/patent/US20140197135A1

## CPC

- H01J 37/32091: {the radio frequency energy being capacitively coupled to the plasma}
- H01J 37/32477: {characterised by the means for protecting vessels or internal parts, e.g. coatings}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)

## Abstract

A plasma processing method includes forming a silicon oxide film on a surface of a member provided within a chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member to be lower than a temperature of another member; performing a plasma process on a target object loaded into the chamber with plasma of a processing gas after the silicon oxide film is formed on the surface of the member; and removing the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.

## Claims

### Claim 1

A plasma processing method comprising:
forming a silicon oxide film on a surface of a member provided within a chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member to be lower than a temperature of another member;
performing a plasma process on a target object loaded into the chamber with plasma of a processing gas after the silicon oxide film is formed on the surface of the member; and
removing the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.

### Claim 2 (depends on 1)

The plasma processing method of claim 1,
wherein the member includes an inner wall of the chamber and a lower electrode provided within the chamber,
the another member includes an upper electrode provided within the chamber to face the lower electrode, and
in the forming of the silicon oxide film, the silicon oxide film is formed on surfaces of the inner wall of the chamber and the lower electrode while controlling temperatures of the inner wall of the chamber and the lower electrode to be lower than a temperature of the upper electrode.

### Claim 3 (depends on 1)

The plasma processing method of claim 1,
wherein in the forming of the silicon oxide film, a bias voltage is applied.

### Claim 4 (depends on 1)

The plasma processing method of claim 1,
wherein the silicon-containing gas includes at least one of SiCl4 and SiF4.

### Claim 5 (depends on 1)

The plasma processing method of claim 1,
wherein the fluorine-containing gas includes at least one of NF3, SF6, and CF4.

### Claim 6 (depends on 1)

The plasma processing method of claim 1,
wherein the silicon-containing gas further includes a rare gas.

### Claim 7 (depends on 6)

The plasma processing method of claim 6,
wherein the rare gas is Ar or He.

### Claim 8

A plasma processing apparatus comprising:
a chamber in which a plasma process is performed on a target object;
an exhaust unit configured to depressurize an inside of the chamber;
a gas supply unit configured to supply a processing gas into the inside of the chamber; and
a control unit configured to form a silicon oxide film on a surface of a member provided within the chamber with plasma of a silicon-containing gas without oxygen while controlling a temperature of the member within the chamber to be lower than a temperature of another member; perform a plasma process on the target object loaded into the chamber with plasma of the processing gas after the silicon oxide film is formed on the surface of the member; and remove the silicon oxide film from the surface of the member with plasma of a fluorine-containing gas after the target object on which the plasma process is performed is unloaded to an outside of the chamber.