# US 2014/0197134 A1 · Systems and methods for plasma processing of microfeature workpieces

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- Number: US 2014/0197134 A1
- Document ID: US20140197134A1
- Status: Published application
- Kind: A1
- Application number: 14/218,428
- Filed: 2014-03-18
- Published: 2014-07-17
- Earliest claimed: 2005-08-11
- Assignees: Micron Technology, Inc.
- Applicants: Micron Technology, Inc.
- Inventors: Shu Qin; Allen McTeer
- Web page: https://patentgrep.com/patent/US20140197134A1

## CPC

- H01J 37/32917: {Plasma diagnostics}
- C23C 14/54: Controlling or regulating the coating process
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- G01N 21/73: using plasma burners or torches
- H01J 37/32935: {Monitoring and controlling tubes by information coming from the object and/or discharge}
- H01J 37/32972: {Spectral analysis}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- G01N: INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES (measuring or testing apparatus or processes other than immunoassay, involving enzymes or microorganisms C12M, C12Q)

## Abstract

Systems and methods for plasma processing of microfeature workpieces are disclosed herein. In one embodiment, a method includes generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber, measuring optical emissions from the plasma, and determining a parameter of the plasma based on the measured optical emissions. The parameter can be an ion density or another parameter of the plasma.

## Claims

### Claim 1

A system for processing a microfeature workpiece, comprising:
a plasma chamber coupleable to a source of gas;
a workpiece support positioned within the plasma chamber and configured to carry the microfeature workpiece;
a detector positioned external to the plasma chamber for measuring intensities of optical emissions from a plasma at discrete wavelengths, wherein the detector measures the intensities of optical emissions from a first region of the plasma spaced apart from the microfeature workpiece by a first distance and from a second region of the plasma spaced apart from the microfeature workpiece by a second distance; and
a controller operably coupled to the detector, the controller being configured to:
selectively add only a first subset of intensities of the optical emissions at discrete wavelengths from the first region,
selectively add only a second subset of intensities of the optical emissions at discrete wavelengths from the second region, and
estimate a plasma parameter by determining a distance from the microfeature workpiece at which selectively added first or second subsets of intensities are a predetermined percentage of a maximum of the selectively added intensities.

### Claim 2 (depends on 1)

The system of claim 1 wherein the plasma parameter is a dimension of a sheath of the plasma.

### Claim 3 (depends on 1)

The system of claim 1 wherein the detector comprises a sensor head that is movable relative to the plasma chamber.

### Claim 4 (depends on 3)

The system of claim 3 wherein the detector comprises an optical emission spectrometer that is operably coupled to the sensor head.

### Claim 5 (depends on 1)

The system of claim 1 wherein the detector comprises a collimator.

### Claim 6 (depends on 1)

The system of claim 1 wherein selectively adding only the first subset of intensities of the optical emissions at discrete wavelengths from the first region and selectively adding only the second subset of intensities of the optical emissions at discrete wavelengths from the second region does not include adding a discrete wavelength corresponding to a radiation of the energy source.

### Claim 7 (depends on 1)

The system of claim 1 wherein the intensities of optical emissions from the plasma depend on ion density or electron density of the plasma.

### Claim 8 (depends on 1)

The system of claim 1 wherein the predetermined percentage of a maximum of the selectively added intensities is between 70% and 90%.

### Claim 9 (depends on 2)

The system of claim 2 wherein the controller is capable of changing parameters of the plasma based on the dimension of the sheath of the plasma.

### Claim 10

A method of processing a microfeature workpiece, comprising:
generating a plasma in a chamber while a microfeature workpiece is positioned in the chamber;
determining intensities of optical emissions at a plurality of discrete wavelengths from a first region of the plasma spaced apart from the microfeature workpiece by a first distance;
determining intensities of the optical emissions at a plurality of discrete wavelengths from a second region of the plasma spaced apart from the microfeature workpiece by a second distance different than the first distance;
selectively adding only a first subset of the intensities of the optical emissions at the discrete wavelengths from the first region;
selectively adding only a second subset of the intensities of the optical emissions at the discrete wavelengths from the second region; and
estimating a plasma parameter by determining a distance from the microfeature workpiece at which selectively added first or second subsets of intensities are a predetermined percentage of a maximum of the selectively added intensities.

### Claim 11 (depends on 10)

The method of claim 10 wherein the plasma parameter is a dimension of a sheath of the plasma.

### Claim 12 (depends on 10)

The method of claim 10, further comprising applying material to the microfeature workpiece while determining the parameter of the plasma.

### Claim 13 (depends on 12)

The method of claim 12 wherein depositing material to the microfeature workpiece comprises implanting ions in the workpiece.

### Claim 14 (depends on 12)

The method of claim 12 wherein depositing material to the microfeature workpiece comprises depositing molecules to the workpiece via plasma enhanced physical vapor deposition.

### Claim 15 (depends on 12)

The method of claim 12 wherein depositing material to the microfeature workpiece comprises depositing molecules to the workpiece via plasma enhanced chemical vapor deposition.

### Claim 16 (depends on 12)

The method of claim 12 wherein depositing material to the microfeature workpiece comprises applying an etchant to the workpiece.

### Claim 17 (depends on 10)

The method of claim 10 wherein measuring optical emissions from the plasma comprises sensing optical emissions from the plasma with a detector positioned external to the chamber.

### Claim 18 (depends on 10)

The method of claim 10, further comprising controlling the parameter of the plasma in response to the estimated plasma parameter.

### Claim 19 (depends on 10)

The method of claim 10 wherein determining the parameter of the plasma comprises calculating an ion density.

### Claim 20 (depends on 10)

The method of claim 10 wherein the predetermined percentage of a maximum of the selectively added intensities is between 70% and 90%.