# US 2014/0197133 A1 · Compositions for controlled assembly and improved ordering of silicon-containing block copolymers > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197133 A1 - Document ID: US20140197133A1 - Status: Published application - Kind: A1 - Application number: 14/153,355 - Filed: 2014-01-13 - Published: 2014-07-17 - Earliest claimed: 2013-01-14 - Assignees: The Regents of the University of California - Applicants: The Regents of the University of California - Inventors: Damien Montarnal; Craig J. Hawker; Edward J. Kramer; Glenn H. Fredrickson - Web page: https://patentgrep.com/patent/US20140197133A1 ## CPC - C09D 183/12: containing polyether sequences - C08K 5/092: Polycarboxylic acids - C08L 53/00: Compositions of block copolymers containing at least one sequence of a polymer obtained by reactions only involving carbon-to-carbon unsaturated bonds; Compositions of derivatives of such polymers - G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping} - G03F 7/075: Silicon-containing compounds - G03F 7/11: having cover layers or intermediate layers, e.g. subbing layers {(G03F7/091 - G03F7/093, B41N3/03 take precedence)} - G03F 7/40: Treatment after imagewise removal, e.g. baking - H10P 50/73: {using masks for insulating materials} - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - C09D: COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR (cosmetics A61K; processes for applying liquids or other fluent materials to surfaces, in general, B05D; staining wood B27K5/02; glazes or vitreous enamels C03C; natural resins, French polish, drying-oils, driers, turpentine, per se, C09F; polishing compositions other than French polish, ski waxes C09G; adhesives or use of materials as adhesives C09J; materials for sealing or packing joints or covers C09K3/10; materials for stopping leaks C09K3/12; processes for the electrolytic or electrophoretic production of coatings C25D) - C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09) - C08L: COMPOSITIONS OF MACROMOLECULAR COMPOUNDS (compositions based on polymerisable monomers C08F, C08G; artificial filaments or fibres D01F; textile treating compositions D06) - G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 ## Abstract The invention provides compositions and methods for inducing and enhancing order and nanostructures in organosilicon block copolymers compositions by including certain organic additives in such compositions that include one or more moieties comprising a hydrogen bond acceptor or a hydrogen bond donor. Such block copolymer compositions may be used, for example, as a mask for lithographic patterning as is used, for example, during various stages of semiconductor device fabrication. ## Claims ### Claim 1 A composition of matter comprising: (a) a block copolymer including: an organosilicon block; an organic block; and one or more moieties comprising a hydrogen bond donor or a hydrogen bond acceptor; and (b) an organic additive including one or more moieties comprising a hydrogen bond acceptor or a hydrogen bond donor, wherein: hydrogen bonds formed between the moieties in the block copolymer and the moieties in the organic additive produce ordered arrangements of atoms in the composition. ### Claim 2 (depends on 1) The composition of claim 1, wherein the ordered arrangements of atoms in the composition: increase the segregation strength of the block copolymer; increase the glass transition temperature of the block copolymer; and/or inhibit crystallization of the block copolymer. ### Claim 3 (depends on 1) The composition of claim 1, wherein the additive comprises from 5 to 40 weight % of the composition. ### Claim 4 (depends on 1) The composition of claim 1, wherein the additive comprises a monosaccharide, a polyphenol, an aromatic polyacid or a 2,3-dihydroxybutanedioic acid. ### Claim 5 (depends on 1) The composition of claim 1, wherein the block copolymer comprises: a poly(ethylene oxide) block, a Poly(methyl methacrylate) (PMMA) block, a Poly(4-vinylpyridine) (P4VP) block or a P4VP-r-PMMA; and/or a polydimethylsiloxane block. ### Claim 6 (depends on 1) The composition of claim 1, wherein the organic block of the block copolymer comprises one or more moieties having a hydrogen bond acceptor and the organic additive comprises one or more moieties having a hydrogen bond donor. ### Claim 7 (depends on 1) The composition of claim 1, further comprising a silicon oxide composition, wherein the block copolymer forms a discrete layer over the silicon oxide composition. ### Claim 8 A lithography system comprising: a substrate comprising at least one layered material; a mask composition disposed over the substrate; wherein the mask composition comprises: (a) a block copolymer including: an organosilicon block; an organic block; and one or more moieties comprising a hydrogen bond donor or a hydrogen bond acceptor; and (b) an organic additive including one or more moieties comprising a hydrogen bond acceptor or a hydrogen bond donor, wherein: hydrogen bonds formed between the moieties in the block copolymer and the moieties in the organic additive produce ordered arrangements of atoms in the composition. ### Claim 9 (depends on 8) The lithography system of claim 8, wherein the substrate comprises a dielectric material layer and/or a semiconductive material layer. ### Claim 10 (depends on 8) The lithography system of claim 8, wherein the substrate comprises a silicon oxide layer. ### Claim 11 (depends on 8) The lithography system of claim 8, wherein the substrate comprises a wafer of monocrystalline silicon. ### Claim 12 (depends on 8) The lithography system of claim 8, wherein the block copolymer comprises a polydimethylsiloxane block. ### Claim 13 (depends on 8) The lithography system of claim 8, wherein the block copolymer has a molecular weight less than 4 kg/mol. ### Claim 14 (depends on 8) The lithography system of claim 8, further comprising a reactive ion etch plasma chamber. ### Claim 15 A method for forming structures having features between 5 and 100 nm in size comprising the steps of: (a) forming a layer of a mask material over a substrate comprising a plurality of layered materials, wherein the mask material comprises a block copolymer composition including: an organosilicon block; an organic block; and one or more moieties comprising a hydrogen bond donor or a hydrogen bond acceptor; and an organic additive including one or more moieties comprising a hydrogen bond acceptor or a hydrogen bond donor, wherein: hydrogen bonds formed between the moieties in the block copolymer and the moieties in the organic additive produce ordered arrangements of atoms in the composition; (b) annealing the mask material on the substrate; (c) exposing the mask material to an etching process selected for its ability to selectively etch the organic block and the organic additive of the block copolymer composition, wherein the etching process exposes a layer of the substrate; and (d) exposing the substrate material to a second etching process selected for its ability to etch the layer of substrate exposed by step (c); so that structures having features between 5 and 100 nm in size are formed. ### Claim 16 (depends on 15) The method of claim 15, wherein the block copolymer comprises a polyol block and a siloxane block. ### Claim 17 (depends on 15) The method of claim 15, wherein the additive comprises from 10 to 40 weight % of the composition. ### Claim 18 (depends on 17) The method of claim 17, wherein the additive is selected for an ability to selectively swell the organosilicon block or the organic block, thereby increasing or decreasing a size of a feature formed by the method. ### Claim 19 (depends on 17) The method of claim 17, wherein an etching process comprises oxygen reactive ion etching. ### Claim 20 (depends on 17) The method of claim 17, wherein the structures comprise pores, channels, columns or wires.