# US 2014/0197132 A1 · Block copolymer, method of forming the same, and method of forming pattern > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197132 A1 - Document ID: US20140197132A1 - Status: Published application - Kind: A1 - Application number: 14/086,182 - Filed: 2013-11-21 - Published: 2014-07-17 - Earliest claimed: 2013-01-11 - Assignees: Samsung Display Co., Ltd.; Sogang University Research Foundation; Korea University Research and Business Foundation - Applicants: Samsung Display Co., Ltd.; Sogang University Research Foundation; Korea University Research and Business Foundation - Inventors: Min Hyuck KANG; Su Mi LEE; Myung Im KIM; Tae Woo KIM; Seung-Won PARK; Xie LEI; Na Na KANG; Bong-Jin MOON; Joona BANG; Sang Hoon WOO; Jin Yeong LEE; Hyun Jung JUNG; June HUH - Web page: https://patentgrep.com/patent/US20140197132A1 ## CPC - C08F 299/024: {the unsaturation being in acrylic or methacrylic groups} - C08F 293/00: Macromolecular compounds obtained by polymerisation on to a macromolecule having groups capable of inducing the formation of new polymer chains bound exclusively at one or both ends of the starting macromolecule (on to polymers modified by introduction of unsaturated end groups C08F290/02) - C08G 61/08: of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring - C08G 2261/1424: containing ether groups, including alkoxy - C08G 2261/1426: containing carboxy groups (COOH) and/or -C(=O)O-moieties - C08G 2261/3324: derived from norbornene - C08G 2261/418: Ring opening metathesis polymerisation [ROMP] - C08G 2261/74: Further polymerisation of the obtained polymers, e.g. living polymerisation to obtain block-copolymers - C08F: MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS - C08G: MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS ## Abstract A block copolymer is provided. The block copolymer according to an exemplary embodiment includes a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50. ## Claims ### Claim 1 A block copolymer comprising: a first block represented by Chemical Formula 1; and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, and b is 1 to 50. ### Claim 2 (depends on 1) The block copolymer of claim 1, wherein the block copolymer comprises a block represented by Chemical Formula BC comprising a first block represented by Chemical Formula 1 and a second block represented by Chemical Formula 2: wherein COM1 and COM2 are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, R1 is hydrogen or an alkyl group with 1 to 10 carbon atoms, Ph is a phenyl group, x is 10 to 500, a is 1 to 50, R2 is hydrogen or an alkyl group with 1 to 10 carbon atoms, y is 10 to 500, and b is 1 to 50. ### Claim 3 (depends on 2) The block copolymer of claim 2, wherein in Chemical Formula 1, COM1 comprises a group represented by Chemical Formula 3, and in Chemical Formula 2, COM2 comprises a group represented by Chemical Formula 4: wherein Ph is a phenyl group and Me is methyl, n is 10 to 1000, m is 10 to 1000, and * means a point of attachment. ### Claim 4 (depends on 2) The block copolymer of claim 2, wherein the block copolymer is represented by Chemical Formula 5: wherein Ph is a phenyl group, Me is methyl, x is 10 to 500, y is 10 to 500, n is 10 to 1000 and m is 10 to 1000. ### Claim 5 (depends on 1) The block copolymer of claim 1, wherein the first block and the second block is connected to each other randomly. ### Claim 6 (depends on 2) A method of making a block copolymer, comprising: synthesizing the block copolymer of claim 2 in the presence of a compound of Chemical Formula 6: wherein OTBS is a tert-butyldimethylsilyloxy group, and a is 1 to 10. ### Claim 7 (depends on 6) The method of claim 6, wherein the material of Chemical Formula 6 is synthesized based on Reaction Equation 1: wherein TBSCl is tert-butyldimethylsilyl chloride, and OTBS is tert-butyldimethylsilyloxy group. ### Claim 8 (depends on 5) The method of claim 5, wherein the block copolymer is made by polymerizing a first macromer represented by Chemical Formula 7 or Chemical Formula 7-1 and a second macromer represented by Chemical Formula 8 by a ring opening metathesis polymerization method: wherein Ph is a phenyl group, Me is methyl, a is 1 to 10, n is 10 to 1000, b is 1 to 10, and m is 10 to 1000. ### Claim 9 (depends on 8) The method of claim 8, wherein the first macromer represented by Chemical Formula 7 is synthesized based on Reaction Equation 2: wherein OTBS is a tert-butyldimethylsilyl oxy group, Ph is phenyl, and n is 10 to 1000. ### Claim 10 (depends on 8) The method of claim 8, wherein the second macromer is synthesized based on Reaction Equation 3: wherein Ph is phenyl, Me is methyl, OTBS is tert-butyldimethylsilyl oxy group, and m is 10 to 1000. ### Claim 11 (depends on 8) The method of claim 8, wherein a Grubbs catalyst is present during the polymerization of the first macromer and the second macromer. ### Claim 12 (depends on 8) The method of claim 8, wherein the first macromer represented by Chemical Formula 7-1 is synthesized based on Reaction Equation 4: wherein Ph is phenyl, and n is 10 to 1000. ### Claim 13 (depends on 2) A pattern formation method comprising: coating the block copolymer of claim 2 on a substrate comprising a mother pattern layer to form a polymer thin film; selectively removing one block of a first block and a second block from the polymer thin film; and etching the mother pattern layer by using the polymer thin film from which one block is removed as a mask. ### Claim 14 (depends on 13) The pattern formation method of claim 13, wherein the polymer thin film is treated with ultraviolet rays or heat. ### Claim 15 A block copolymer comprising: a first block represented by COM A in Structural Formula A; a second block represented by COM B in Structural Formula A; and a random block inserted between the first block and the second block and represented by RBC in Structural Formula A: wherein COM A and COM B are independently selected from a polystyrene moiety, polymethylmethacrylate moiety, polyethylene oxide moiety, polyvinylpyridine moiety, polydimethylsiloxane moiety, polyferrocenyldimethylsilane moiety, and polyisoprene moiety, and RBC is a group in which at least two unit blocks are randomly copolymerized. ### Claim 16 (depends on 15) The block copolymer of claim 15, wherein COM A is a group comprising polystyrene, and COM B is a group comprising polymethylmethacrylate. ### Claim 17 (depends on 16) The block copolymer of claim 16, wherein the block copolymer is represented by Chemical Formula B: wherein a molecular weight of Chemical Formula B is 10,000 to 1,000,000, 1 and n are 10 to 10,000, m is 5 to 2000, x is 10 to 500, y is 10 to 500 and a unit block represented by and a unit block represented by in RBC are randomly copolymerized. ### Claim 18 (depends on 17) A method of making a block copolymer, comprising synthesizing the block copolymer of claim 17 based on Reaction Equation A: ### Claim 19 (depends on 15) A pattern formation method comprising: coating the block copolymer of claim 15 on a substrate comprising a mother pattern layer to form a polymer thin film; selectively removing one block of a first block and a second block from the polymer thin film; and etching the mother pattern layer by using the polymer thin film from which one block is removed as a mask. ### Claim 20 (depends on 19) The pattern formation method of claim 19, wherein the polymer thin film is treated with ultraviolet rays or heat.