# US 2014/0197130 A1 · Method for manufacturing a plurality of nanowires > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197130 A1 - Document ID: US20140197130A1 - Status: Published application - Kind: A1 - Application number: 13/739,030 - Filed: 2013-01-11 - Published: 2014-07-17 - Earliest claimed: 2013-01-11 - Assignees: Infineon Technologies AG - Applicants: Infineon Technologies AG - Inventors: Marko Lemke; Stefan Tegen; Uwe Rudolph - Web page: https://patentgrep.com/patent/US20140197130A1 ## CPC - H01M 4/386: {Silicon or alloys based on silicon} - C01B 32/05: Preparation or purification of carbon not covered by groups C01B32/15, C01B32/20, C01B32/25, C01B32/30 - H01M 4/66: Selection of materials - H01M 10/0525: Rocking-chair batteries, i.e. batteries with lithium insertion or intercalation in both electrodes; Lithium-ion batteries - H10D 62/122: {oriented at angles to substrates, e.g. perpendicular to substrates} - H10D 62/83: being Group IV materials, e.g. B-doped Si or undoped Ge - H10P 50/242: {of Group IV materials} - B82Y 40/00: Manufacture or treatment of nanostructures - H01M 2004/025: {with shapes other than plane or cylindrical} - H01M 2004/027: {Negative electrodes} - Y02E 60/10: Energy storage using batteries - H01M: PROCESSES OR MEANS, e.g. BATTERIES, FOR THE DIRECT CONVERSION OF CHEMICAL ENERGY INTO ELECTRICAL ENERGY - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION ## Abstract A method for manufacturing a plurality of nanowires, the method including: providing a carrier comprising an exposed surface of a material to be processed and applying a plasma treatment on the exposed surface of the material to be processed to thereby form a plurality of nanowires from the material to be processed during the plasma treatment. ## Claims ### Claim 1 A method for manufacturing a plurality of nanowires, the method comprising: providing a carrier comprising an exposed surface of a material to be processed, applying a plasma treatment on the exposed surface of the material to be processed to thereby form a plurality of nanowires from the material to be processed during the plasma treatment. ### Claim 2 (depends on 1) The method according to claim 1, wherein the nanowires of the plurality of nanowires have a diameter in the range from about 10 nm to about 100 nm. ### Claim 3 (depends on 1) The method according to claim 1, wherein the nanowires of the plurality of nanowires have a length in the range from about 50 nm to about 10 μm. ### Claim 4 (depends on 1) The method according to claim 1, wherein applying the plasma treatment comprises applying plasma etching. ### Claim 5 (depends on 1) The method according to claim 1, wherein applying the plasma treatment comprises applying reactive ion etching. ### Claim 6 (depends on 5) The method according to claim 5, wherein applying the plasma treatment comprises applying magnetically enhanced reactive ion etching. ### Claim 7 (depends on 5) The method according to claim 5, wherein applying the plasma treatment comprises applying inductively enhanced reactive ion etching. ### Claim 8 (depends on 1) The method according to claim 1, wherein providing the carrier comprises providing a silicon wafer. ### Claim 9 (depends on 8) The method according to claim 8, wherein the exposed surface comprises a bare silicon surface of the silicon wafer. ### Claim 10 (depends on 1) The method according to claim 1, wherein the material of the exposed surface comprises at least one of silicon and germanium. ### Claim 11 (depends on 1) The method according to claim 1, wherein applying the plasma treatment comprises using at least one of hydrogen bromide, oxygen, nitrogen trifluoride, sulfur hexafluoride, hydrogen iodide, boron trichloride, chlorine trifluoride, hydrogen chloride, and carbon tetrafluoride as plasma etchant. ### Claim 12 (depends on 1) The method according to claim 1, wherein the plurality of nanowires is formed at least one of over and in the material to be processed. ### Claim 13 (depends on 1) The method according to claim 1, wherein the plurality of nanowires form a self-assembled array of nanowires at least one of over and in the material to be processed. ### Claim 14 (depends on 1) The method according to claim 1, wherein the nanowires of the plurality of nanowires are irregularly distributed. ### Claim 15 (depends on 1) The method according to claim 1, wherein the nanowires of the plurality of nanowires are aligned substantially perpendicular to the exposed surface of the material to be processed. ### Claim 16 A method for manufacturing an array of nanowires, the method comprising: forming at least one layer of a material to be processed over a substrate, such that an exposed surface of the material to be processed is provided; and applying a plasma etch process on the exposed surface of the material to be processed to thereby form a plurality of nanowires from the material to be processed during the plasma treatment. ### Claim 17 (depends on 16) The method according to claim 16, wherein the substrate comprises an integrated circuit. ### Claim 18 (depends on 16) The method according to claim 16, wherein forming the at least one layer over the substrate comprises depositing a silicon layer. ### Claim 19 A method for manufacturing a plurality of nanostructures, the method comprising: providing a wafer comprising an exposed surface area to be processed, wherein the exposed surface area comprises a material to be processed, applying a plasma etching on the exposed surface area, thereby forming a plurality of nanostructures from the material to be processed during the plasma etching. ### Claim 20 (depends on 19) The method according to claim 19, wherein the nanostructures comprises at least one of nanowires, nanotubes and nanopillars. ### Claim 21 (depends on 19) The method according to claim 19, wherein the material of the exposed surface area to be processed comprises silicon. ### Claim 22 A method for manufacturing a battery, the method comprising: forming a plurality of nanowires by providing a carrier comprising an exposed surface of a material to be processed, and applying a plasma treatment on the exposed surface of the material to be processed to thereby form a plurality of nanowires from the material to be processed during the plasma treatment; forming a layer stack over the plurality of nanowires, wherein the layer stack comprises at least one electrolyte layer, at least one cathode layer, and at least one cathode current collector layer, wherein the plurality of nanowires is at least part of an anode of the battery. ### Claim 23 (depends on 22) The method according to claim 22, wherein the carrier comprises an anode current collector layer below the material to be processed. ### Claim 24 (depends on 22) The method according to claim 22, further comprising: forming a carbon layer between the plurality of nanowires and the electrolyte layer of the layer stack. ### Claim 25 (depends on 22) The method according to claim 22, wherein the layer stack provides a part of a lithium-ion based rechargeable battery.