# US 2014/0197129 A1 · Substrate processing method and substrate processing apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0197129 A1 - Document ID: US20140197129A1 - Status: Published application - Kind: A1 - Application number: 14/146,174 - Filed: 2014-01-02 - Published: 2014-07-17 - Earliest claimed: 2013-01-15 - Assignees: Dainippon Screen Mfg. Co., Ltd. - Applicants: Dainippon Screen Mfg. Co., Ltd. - Inventors: Tatsuya FUJII; Toru ENDO - Web page: https://patentgrep.com/patent/US20140197129A1 ## CPC - H10P 72/0424: {using mainly spraying means, e.g. nozzles} - B08B 3/02: Cleaning by the force of jets or sprays - B08B 3/024: {Cleaning by means of spray elements moving over the surface to be cleaned} - B44C 1/22: Removing surface-material, e.g. by engraving, by etching {(for multi-layer articles B44C3/005)} - B44C 1/227: {by etching} - H10P 50/20: Dry etching; Plasma etching; Reactive-ion etching - H10P 50/283: {by chemical means} - H10P 50/642: {Chemical etching} - H10P 50/644: {Anisotropic liquid etching (H10P50/61 takes precedence)} - H10P 50/667: {by liquid etching only} - H10P 52/00: Grinding, lapping or polishing of wafers, substrates or parts of devices - H10P 72/0414: {using mainly spraying means, e.g. nozzles} - H10P 72/0422: {for wet etching} - H10P 72/0448: {Apparatus for applying a liquid, a resin, an ink or the like} - H10P 95/70: Chemical treatments - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - B08B: CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL - B44C: PRODUCING DECORATIVE EFFECTS (processes for applying liquids or other fluent materials to surfaces, in general B05D; shaping of plastics or substances in a plastic state B29C; printing processes to produce transfer pictures B41M3/12; thermographic duplication or marking methods B41M5/00); MOSAICS; TARSIA WORK (imitation of mosaic or tarsia work patterns B44F11/04); PAPERHANGING {(labels G09F; multi-step processes for making paper labels or tags B31D1/02)} ## Abstract Scan step (S3) for moving a nozzle with etching liquid discharged therefrom is carried out such that etching liquid application position toward the rotating substrate moves from the edge portion toward the center portion of the principal face of the substrate. Thereafter, center discharging step (S4) for continuing the supply of the etching liquid toward the principal face of the substrate under the condition that the application position is positioned at the center portion of the principal face of the substrate W is conducted. Moving velocity of the liquid application position in the scan step (S3) is determined in accordance with supply condition of the etching liquid toward the substrate under the condition that the liquid application position is positioned at the center portion of the principal face of the substrate. ## Claims ### Claim 1 A substrate processing method for processing a substrate comprising: a scan velocity determining step of determining a moving velocity for moving a liquid application position on which the etching liquid is applied from an edge portion of a principal face of the substrate to a center portion of the principal face of the substrate according to a supply condition of the etching liquid under a state that the liquid application position is positioned at the center portion of the principal face of the substrate; a scan step of rotating the substrate about an rotational axis passing through the principal face of the substrate and moving a nozzle while discharging the etching liquid therefrom such that the liquid application position is moved from the edge portion of the principal face of the substrate to the center portion of the principal face of the substrate; and a center discharging step of rotating the substrate about the rotational axis while continuing the discharge of the etching liquid toward the principal face of the substrate, under the state that the liquid application position is positioned at the center portion of the principal face of the substrate. ### Claim 2 (depends on 1) The substrate processing method according to claim 1, wherein the scan velocity determining step is a step of determining the moving velocity according to a supply time for supplying the etching liquid toward the substrate under the state that the liquid application position is positioned at the center portion of the principal face of the substrate. ### Claim 3 (depends on 2) The substrate processing method according to claim 2, wherein the scan velocity determining step is a step of determining the moving velocity of the liquid application position according to a table indicating relationship between the supply time of the etching liquid under the state that the liquid application position is positioned at the center portion of the principal face of the substrate and the moving velocity of the liquid application position. ### Claim 4 (depends on 2) The substrate processing method according to claim 2, wherein the scan velocity determining step is a step of determining the moving velocity of the liquid application position according to a table indicating relationship between the supply time of the etching liquid under the state that the liquid application position is positioned at the center portion of the principal face of the substrate and a moving time of the liquid application position. ### Claim 5 (depends on 1) The substrate processing method according to claim 1, wherein the scan velocity determining step is a step of determining the moving velocity of the liquid application position for each of a plurality of intervals between the edge portion of the principal face of the substrate and the center portion of the principal face of the substrate. ### Claim 6 A substrate processing apparatus for processing a substrate comprising: a substrate holding rotating unit for holding the substrate and rotating the substrate about a rotational axis passing through a principal face of the substrate; an etching liquid supply mechanism including a nozzle for discharging an etching liquid toward the principal face of the substrate held by the substrate holding rotating unit; a nozzle moving mechanism for moving a liquid application position, the etching liquid discharged out of the nozzle being applied thereon, within the principal face of the substrate; and a control device for controlling the substrate holding rotating unit, the etching liquid supply mechanism, and the nozzle moving mechanism, wherein the control device carries out: a scan velocity determining step of determining a moving velocity for moving a liquid application position from an edge portion of the principal face of the substrate to the center portion of the principal face of the substrate according to a supply condition of the etching liquid under a state that the liquid application position is positioned at the center portion of the principal face of the substrate; a scan step of rotating the substrate about an rotational axis passing through the principal face of the substrate and moving the nozzle while discharging the etching liquid such that the liquid application position is moved from the edge portion of the principal face of the substrate to the center portion of the principal face of the substrate; and a center discharging step of rotating the substrate about the rotational axis while continuing the discharge of the etching liquid toward the principal face of the substrate under the state that the liquid application position being positioned at the center portion of the principal face of the substrate. ### Claim 7 (depends on 6) The substrate processing apparatus according to claim 6, wherein the control device determines the moving velocity according to a supply time for supplying the etching liquid toward the substrate under the state that the liquid application position is positioned at the center portion of the principal face of the substrate. ### Claim 8 (depends on 7) The substrate processing apparatus according to claim 7, wherein the control device: includes a memory device storing a table indicating relationship between the supply time of the etching liquid under the state that the liquid application position is positioned at the center portion of the principal face of the substrate and the moving velocity of the liquid application position; and determines the moving velocity of the liquid application position according to the table in the scan velocity determining step. ### Claim 9 (depends on 7) The substrate processing apparatus according to claim 7, wherein the control device includes a memory device storing a table indicating relationship between the supply time of the etching liquid under the state that the liquid application position is positioned at the center portion of the principal face of the substrate and a moving time of the liquid application position for moving the liquid application position from the edge portion of the principal face of the substrate to the center portion of the principal face of the substrate, and wherein the moving velocity of the liquid application velocity is determined according to the table in the scan velocity determining step. ### Claim 10 (depends on 6) The substrate processing apparatus according to claim 6, wherein the control device determines the moving velocity of the liquid application position for each of a plurality of intervals between the edge portion of the principal face of the substrate and the center portion of the principal face of the substrate in the scan velocity determining step.