# US 2014/0197026 A1 · Sputtering apparatus and method for forming a transmissive conductive layer of a light emitting device

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- Number: US 2014/0197026 A1
- Document ID: US20140197026A1
- Status: Published application
- Kind: A1
- Application number: 14/239,109
- Filed: 2011-08-17
- Published: 2014-07-17
- Earliest claimed: 2011-08-17
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Young Chul Shin; Gi Bum Kim; Won Goo Hur
- Web page: https://patentgrep.com/patent/US20140197026A1

## CPC

- H01J 37/3411: {Constructional aspects of the reactor}
- C23C 14/0641: {Nitrides (C23C14/0617 takes precedence)}
- C23C 14/34: Sputtering
- H01J 37/32357: {Generation remote from the workpiece, e.g. down-stream}
- H01J 37/32422: {Arrangement for selecting ions or species in the plasma}
- H01J 37/32568: {Relative arrangement or disposition of electrodes; moving means}
- H01J 37/3417: {Arrangements}
- H01J 37/3438: {Electrodes other than cathode}
- H10F 71/138: {Manufacture of transparent electrodes, e.g. transparent conductive oxides [TCO] or indium tin oxide [ITO] electrodes}
- H10H 20/833: Transparent materials
- Y02E 10/50: Photovoltaic [PV] energy
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

There is provided a method for manufacturing a nitride semiconductor light emitting device, including: forming a light emitting structure including first and second conductive nitride semiconductor layers on a substrate and an active layer formed therebetween; forming the first conductive nitride semiconductor layer, the active layer, and the second conductive nitride semiconductor layer in sequence; forming a first electrode connected to the first conductive nitride semiconductor layer; forming a photo-resist layer on the second conductive nitride semiconductor layer so as to expose a portion of the semiconductor layer; and removing the photo-resist layer after a reflective metal layer and a barrier metal layer serving as a second electrode structure are successively formed on the second conductive nitride semiconductor layer exposed by the photo-resist layer.

## Claims

### Claim 1

A sputtering apparatus for forming a transmissive conductive layer of a light emitting device, comprising:
a chamber;
a target receiving unit disposed on one inner wall of the chamber;
a substrate receiving unit formed to be opposed to the target receiving unit; and
a filter formed of two or more layers of metal nets between the target receiving unit and the substrate receiving unit.

### Claim 2 (depends on 1)

The sputtering apparatus of claim 1, wherein at least one layer of the filter formed of two or more layers of metal nets is used as a grounding electrode.

### Claim 3 (depends on 1)

The sputtering apparatus of claim 1, wherein the filter formed of two or more layers of metal nets has perforations in a mesh or stripe pattern.

### Claim 4 (depends on 3)

The sputtering apparatus of claim 3, wherein the filter formed of two or more layers of metal nets has open portions thereof disposed alternately with each other.

### Claim 5 (depends on 3)

The sputtering apparatus of claim 3, wherein in the filter formed of two or more layers of metal nets, a width of a metal part is 10 μm to 10 mm and a width of a perforation is 10 μm to 10 mm.

### Claim 6 (depends on 3)

The sputtering apparatus of claim 3, wherein an interval between the filter and a substrate received in the substrate receiving unit is 10 to 500 mm.

### Claim 7

A sputtering method for forming a transmissive conductive layer of a light emitting device, comprising:
preparing a substrate and a target; and
depositing elements from the target on the substrate by sputtering,
wherein during the sputtering, a filter formed of two or more layers of metal nets is provided between the target and the substrate, and at least one layer of the filter is used as a grounding electrode.

### Claim 8 (depends on 7)

The sputtering method of claim 7, wherein the sputtering includes a first sputtering process of performing sputtering at a deposition rate of 0.1 to 200 Å/sec. until a thickness of a transmissive conductive layer is 10 to 1000 Å, and a second sputtering process of performing sputtering at a deposition rate of 1 to 2000 Å/sec. to a final thickness of the transmissive conductive layer after the thickness thereof reaches 10 to 1000 Å.

### Claim 9 (depends on 7)

The sputtering method of claim 7, wherein the filter formed of two or more layers of metal nets has perforations in a mesh or stripe pattern.

### Claim 10 (depends on 9)

The sputtering method of claim 9, wherein the filter formed of two or more layers of metal nets has open portions thereof disposed alternately with each other.