# US 2014/0196851 A1 · Compliant micro device transfer head

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- Number: US 2014/0196851 A1
- Document ID: US20140196851A1
- Status: Published application
- Kind: A1
- Application number: 14/173,693
- Filed: 2014-02-05
- Published: 2014-07-17
- Earliest claimed: 2012-07-06
- Assignees: LuxVue Technology Corporation
- Applicants: LuxVue Technology Corporation
- Inventors: Dariusz Golda; Andreas Bibl
- Web page: https://patentgrep.com/patent/US20140196851A1

## CPC

- B32B 38/18: Handling of layers or the laminate
- B81C 99/002: {Apparatus for assembling MEMS, e.g. micromanipulators (micromanipulators per se B25J7/00)}
- H10P 72/74: {using temporarily an auxiliary support}
- H10W 70/611: {for connecting multiple chips together}
- H10W 70/635: {Through-vias}
- H10P 72/7434: {used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate}
- H10P 72/744: {Details of chemical or physical process used for separating the auxiliary support from a device or a wafer}
- Y10T 156/17: Surface bonding means and/or assemblymeans with work feeding or handling means
- B32B: LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A compliant monopolar micro device transfer head array and method of forming a compliant monopolar micro device transfer array from an SOI substrate are described. In an embodiment, the micro device transfer head array including a base substrate and a patterned silicon layer over the base substrate. The patterned silicon layer may include a silicon interconnect and an array of silicon electrodes electrically connected with the silicon interconnect. Each silicon electrode includes a mesa structure protruding above the silicon interconnect, and each silicon electrode is deflectable into a cavity between the base substrate and the silicon electrode. A dielectric layer covers a top surface of each mesa structure.

## Claims

### Claim 1

A compliant transfer head array comprising:
a base substrate;
an insulating layer on the base substrate;
a patterned device layer on the insulating layer, the patterned device layer comprising:
a trace interconnect integrally formed with an array of electrodes;
wherein each electrode includes a mesa structure protruding above the trace interconnect, and each electrode is deflectable toward the base substrate; and
a dielectric layer covering a top surface of each mesa structure.

### Claim 2 (depends on 1)

The compliant transfer head array of claim 1, wherein the trace interconnect runs through a working area of the compliant transfer head array including the array of electrodes.

### Claim 3 (depends on 1)

The compliant transfer head array of claim 1, wherein each electrode is deflectable into a cavity in the base substrate.

### Claim 4 (depends on 3)

The compliant transfer head array of claim 3, wherein each electrode is deflectable into the same cavity in the base substrate.

### Claim 5 (depends on 3)

The compliant transfer head array of claim 3, wherein the cavity wraps around an end of the trace interconnect.

### Claim 6 (depends on 3)

The compliant transfer head array of claim 3, wherein each electrode is deflectable into a separate cavity in the base substrate.

### Claim 7 (depends on 1)

The compliant transfer head array of claim 1, further comprising a first dielectric layer covering a top surface of the trace interconnect.

### Claim 8 (depends on 7)

The compliant transfer head array of claim 7, wherein the dielectric layer overlaps a top surface of the first dielectric layer.

### Claim 9 (depends on 8)

The compliant transfer head array of claim 8, wherein the dielectric layer has a higher dielectric constant or dielectric breakdown strength than the first dielectric layer.

### Claim 10 (depends on 1)

The compliant transfer head array of claim 1, wherein each electrode further comprises an electrode lead spanning between a corresponding mesa structure and the trace interconnect.

### Claim 11 (depends on 10)

The compliant transfer head array of claim 10, wherein the electrode lead for each electrode runs perpendicular to trace interconnect.

### Claim 12 (depends on 10)

The compliant transfer head array of claim 10, wherein each electrode extends from the trace interconnect in a single sided clamped cantilever beam configuration.

### Claim 13 (depends on 12)

The compliant transfer head array of claim 12, wherein the patterned device layer further comprises a second trace interconnect, and each electrode further comprises a second electrode lead spanning between a corresponding mesa structure and the second trace interconnect.

### Claim 14 (depends on 13)

The compliant transfer head array of claim 13, wherein each electrode extends between the trace interconnect and the second trace interconnect in a double sided clamped cantilever beam configuration.

### Claim 15 (depends on 12)

The compliant transfer head array of claim 12, wherein the patterned device layer further comprise a second array of second electrodes integrally formed with the trace interconnect, wherein each second electrode includes a second mesa structure protruding above the trace interconnect, and each second electrode is deflectable toward the base substrate.

### Claim 16 (depends on 15)

The compliant transfer head array of claim 15, wherein the array of electrodes and second array of second electrodes extend in opposite directions from the trace interconnect.

### Claim 17 (depends on 16)

The compliant transfer head array of claim 16, wherein the array of electrodes and second array of electrodes are deflectable into a cavity in the base substrate.

### Claim 18 (depends on 17)

The compliant transfer head array of claim 17, wherein the array of electrodes and second array of electrodes are deflectable into the same cavity in the base substrate.

### Claim 19 (depends on 17)

The compliant transfer head array of claim 17, wherein the array of electrodes and second array of electrodes are deflectable into different cavities in the base substrate.