# US 2014/0196850 A1 · Method and system for wafer level singulation

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0196850 A1
- Document ID: US20140196850A1
- Status: Published application
- Kind: A1
- Application number: 14/075,603
- Filed: 2013-11-08
- Published: 2014-07-17
- Earliest claimed: 2011-02-18
- Assignees: Applied Materials, Inc.
- Applicants: Applied Materials, Inc.
- Inventors: Klaus Schuegraf; Seshadri Ramaswami; Michael R. Rice; Mohsen S. Salek; Claes H. Bjorkman
- Web page: https://patentgrep.com/patent/US20140196850A1

## CPC

- H10P 54/00: Cutting or separating of wafers, substrates or parts of devices
- H10P 50/00: Etching of wafers, substrates or parts of devices
- H10P 50/691: {for Group IV materials or Group III-V materials}
- H10P 70/30: {Cleaning after the substrates have been singulated}
- H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)}
- H10P 72/0468: {comprising a chamber adapted to a particular process}
- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- H10W 46/00: Marks applied to devices, e.g. for alignment or identification
- H10W 74/014: {using batch processing}
- H10P 72/7416: {used during dicing or grinding}
- H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10W 72/0198: {batch processes}
- H10W 74/019: {using temporary auxiliary substrates (H10W74/017 takes precedence)}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method of singulating a plurality of semiconductor dies includes providing a carrier substrate and joining a semiconductor substrate to the carrier substrate. The semiconductor substrate includes a plurality of devices. The method also includes forming a mask layer on the semiconductor substrate, exposing a predetermined portion of the mask layer to light, and processing the predetermined portion of the mask layer to form a predetermined mask pattern on the semiconductor substrate. The method further includes forming the plurality of semiconductor dies, each of the plurality of semiconductor dies being associated with the predetermined mask pattern and including one or more of the plurality of devices and separating the plurality of semiconductor dies from the carrier substrate.

## Claims

### Claim 1

A system for singulation of semiconductor dies, the system comprising:
a coating unit operable to form a mask layer on a semiconductor substrate including a plurality of devices;
a bonding unit operable to join the semiconductor substrate to a carrier substrate;
a laser processing unit operable to expose a predetermined portion of the mask layer to laser light;
a development processing unit operable to form a predetermined mask pattern on the semiconductor substrate;
a singulation unit operable to form the plurality of semiconductor dies, each of the plurality of semiconductor dies being associated with the predetermined mask pattern and including one or more of the plurality of devices; and
a die separation unit operable to separate the plurality of semiconductor dies from the carrier substrate.

### Claim 2 (depends on 1)

The system of claim 1 wherein the carrier substrate comprises a silicon substrate.

### Claim 3 (depends on 1)

The system of claim 1 wherein the semiconductor substrate comprises:
a continuous film disposed on the semiconductor substrate; and
an annular adhesive layer coupled to the semiconductor substrate and surrounding the continuous film.

### Claim 4 (depends on 3)

The system of claim 3 wherein the film comprises an inert material.

### Claim 5 (depends on 4)

The system of claim 4 wherein the inert material comprises an amorphous carbon material.

### Claim 6 (depends on 1)

The system of claim 1 wherein the semiconductor substrate comprises:
an inert film disposed on first portions of the semiconductor substrate, the first portions being associated with one or more of the plurality of devices; and
an adhesive material disposed on second portions of the semiconductor substrate different than the first portions.

### Claim 7 (depends on 1)

The system of claim 1 wherein the singulation unit comprises a development unit and an etching unit.

### Claim 8 (depends on 1)

The system of claim 1 wherein the laser processing unit comprises a laser source.

### Claim 9 (depends on 1)

The system of claim 1 further comprising a cleaning unit.

### Claim 10 (depends on 1)

The system of claim 1 wherein the laser processing unit, the development processing unit, and the singulation unit are a single unit.