# US 2014/0196846 A1 · Method and device for bonding two wafers

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- Number: US 2014/0196846 A1
- Document ID: US20140196846A1
- Status: Published application
- Kind: A1
- Application number: 14/113,256
- Filed: 2012-03-30
- Published: 2014-07-17
- Earliest claimed: 2011-05-11
- Inventors: Erich Thallner
- Web page: https://patentgrep.com/patent/US20140196846A1

## CPC

- H10W 29/00: Generic parts of integrated devices, not otherwise provided for
- H10P 10/128: {by direct semiconductor to semiconductor bonding}
- H10P 72/00: Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
- H10P 72/0428: {Apparatus for mechanical treatment or grinding or cutting}
- H10P 90/1914: {using bonding}
- H10W 29/01: {Manufacture or treatment}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A device for bonding of two wafers on one joining surface V of the wafers. The device includes a pressure transfer means with a pressure surface D for applying a bond pressure to the two wafers on the pressure surface D, wherein the pressure surface D is smaller than the joining surface V. The invention also relates to a method for bonding of two wafers on one joining surface V of the two wafers, by pressure transfer means with a pressure surface D for action on the wafers (2, 3), wherein a bond pressure is applied in succession to partial sections of the joining surface V.

## Claims

### Claim 1

A device for bonding of two wafers on one joining surface V of the wafers, said device comprising:
a pressure transfer means having a pressure surface D for applying a bond pressure to the wafers on the pressure surface D,
wherein the pressure surface D is smaller than the joining surface V and said pressure transfer means applies the bond pressure in succession to partial sections of the joining surface V.

### Claim 2 (depends on 1)

The device as claimed in claim 1, wherein the pressure surface D is <80%.

### Claim 3 (depends on 1)

The device as claimed in claim 1, wherein the pressure surface D is moved at least partially, along one action surface of one of the wafers facing away from the joining surface V.

### Claim 4 (depends on 1)

The device as claimed in claim 1, wherein the bond pressure is applied to a partial section of the joining surface V, section corresponding to the pressure surface D.

### Claim 5 (depends on 1)

The device as claimed in claim 1, wherein the pressure surface is exposed at least partially to ultrasound.

### Claim 6 (depends on 1)

The device as claimed in claim 1, wherein the pressure surface D is moved linearly or rotationally parallel to an action surface.

### Claim 7 (depends on 1)

The device as claimed in claim 1, wherein the pressure surface D is wedge-shaped.

### Claim 8 (depends on 1)

The device as claimed in claim 1, wherein the pressure surface D is strip-shaped.

### Claim 9

A method for bonding two wafers on one joining surface V of the two wafers, wherein said method comprises:
acting on the two wafers using pressure transfer means with a pressure surface D, and
applying a bond pressure in succession to partial sections of the joining surface V.

### Claim 10 (depends on 8)

The device as claimed in claim 8, wherein the pressure surface D has parallel longitudinal sides.