# US 2014/0196782 A1 · Method for making semiconductor device and semiconductor device made thereby > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0196782 A1 - Document ID: US20140196782A1 - Status: Published application - Kind: A1 - Application number: 14/152,263 - Filed: 2014-01-10 - Published: 2014-07-17 - Earliest claimed: 2013-01-15 - Assignees: Epistar Corporation - Applicants: Epistar Corporation - Inventors: Yi Hung LIN; Yu Chih YANG; Wu Tsung LO - Web page: https://patentgrep.com/patent/US20140196782A1 ## CPC - H10P 74/23: {characterised by multiple measurements, corrections, marking or sorting processes} - H10F 71/00: Manufacture or treatment of devices covered by this subclass (patterning processes to connect thin photovoltaic cells in integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/33; manufacture or treatment of encapsulations or containers for integrated devices, or assemblies of multiple devices, having photovoltaic cells H10F19/80; manufacture or treatment of integrated devices, or assemblies of multiple devices, comprising at least one element in which radiation controls the flow of current H10F39/00) - H10F 71/127: {The active layers comprising only Group III-V materials, e.g. GaAs or InP} - H10F 77/211: {for photovoltaic cells} - H10F 77/311: {for photovoltaic cells} - H10P 74/203: {Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects} - Y02E 10/544: Solar cells from Group III-V materials - Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION - Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION - Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS ## Abstract Disclosed is a method for yield enhancement of making a semiconductor device. The method for yield enhancement of making a semiconductor device comprises the steps of: providing the semiconductor device comprising an epitaxial layer including a defect; forming a dielectric layer on the epitaxial layer; detecting and identifying a location of the defect; and etching the dielectric layer and leaving a part of the dielectric layer to cover an area substantially corresponding to the detected defect. The semiconductor device made by the method is also disclosed. ## Claims ### Claim 1 A method for yield enhancement of ng a semiconductor device, comprising the steps of: providing the semiconductor device comprising an epitaxial layer including a defect; forming a dielectric layer on the epitaxial layer; detecting and identifying a location of the defect; and etching the dielectric layer and leaving apart of the dielectric layer to cover an area substantially corresponding to the detected defect. ### Claim 2 (depends on 1) The method as claimed in claim 1, further comprising forming a photo-resistor on the dielectric layer in the area substantially corresponding to the detected defect before etching the dielectric layer. ### Claim 3 (depends on 1) The method as claimed in claim 1, wherein the dielectric layer comprises an anti-reflective layer. ### Claim 4 (depends on 3) The method as claimed in claim 3, further comprising forming an electrode comprising a first part and a second part, wherein the first part overlaps the area and the second part does not overlap the area. ### Claim 5 (depends on 4) The method as claimed in claim 4, wherein the first part of the electrode is disposed on the anti-reflective layer, and the second part of the electrode is disposed in the anti-reflective layer and on the epitaxial layer. ### Claim 6 (depends on 1) The method as claimed in claim 1, wherein the dielectric layer comprises silicon oxide or silicon nitride. ### Claim 7 (depends on 1) The method as claimed in claim 1, further comprising forming an anti-reflective layer on the dielectric layer. ### Claim 8 (depends on 7) The method as claimed in claim 7, further comprising forming an electrode comprising a first part and a second part, wherein the first part overlaps the area and the second part does not overlap the area. ### Claim 9 (depends on 8) The method as claimed in claim 8, wherein the first part of the electrode is disposed on the anti-reflective layer, and the second part of the electrode is disposed in the anti-reflective layer and on the dielectric layer. ### Claim 10 (depends on 7) The method as claimed in claim 7, wherein the dielectric layer comprises silicon oxide or silicon nitride. ### Claim 11 (depends on 2) The method as claimed in claim 2, wherein detecting and identifying the location of the defect is performed by an image recognition system. ### Claim 12 (depends on 11) The method as claimed in claim 11, wherein the step of forming a photo-resistor on the dielectric layer in an area substantially corresponding to the detected defect comprises coating the photo-resistor on the dielectric layer and exposing a part of the photo-resistor according to an information of the location of the defect provided by the image recognition system. ### Claim 13 (depends on 12) The method as claimed in claim 12, wherein exposing a part of the photo-resistor is performed with a first light source different from a second light source used in the image recognition system for detecting and identifying the location of the defect. ### Claim 14 (depends on 11) The method as claimed in claim 11, wherein the step of forming a photo-resistor on the dielectric layer in an area substantially corresponding to the detected defect is performed manually. ### Claim 15 (depends on 12) The method as claimed in claim 12, further comprising providing a mask and exposing the photo-resistor with the mask to expose a pattern for an electrode on the photo-resistor. ### Claim 16 A photovoltaic device, comprising: an epitaxial layer including a defect; a dielectric layer on the epitaxial layer to cover an area substantially corresponding to the defect; and an electrode having a first part which overlaps the first area above the epitaxial layer. ### Claim 17 (depends on 16) The photovoltaic device as claimed in claim 16, wherein the dielectric layer comprises an anti-reflective layer. ### Claim 18 (depends on 17) The photovoltaic device as claimed in claim 17, wherein the electrode further comprises a second part which does not overlap the area, and the first part of the electrode is on the anti-reflective layer, and the second part of the electrode is in the anti-reflective layer and on the epitaxial layer. ### Claim 19 (depends on 16) The photovoltaic device as claimed in claim 16, wherein the dielectric layer comprises silicon oxide or silicon nitride. ### Claim 20 (depends on 16) The photovoltaic device as claimed in claim 16, wherein the epitaxial layer comprises a solar cell structure having a p-n junction.