# US 2014/0196781 A1 · Method of manufacturing thick-film electrode

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- Number: US 2014/0196781 A1
- Document ID: US20140196781A1
- Status: Published application
- Kind: A1
- Application number: 13/741,648
- Filed: 2013-01-15
- Published: 2014-07-17
- Earliest claimed: 2013-01-15
- Assignees: E.I. du Pont de Nemours and Company
- Applicants: E.I. Du Pont De Nemours and Company
- Inventors: Kazushige ITO; Kazutaka OZAWA
- Web page: https://patentgrep.com/patent/US20140196781A1

## CPC

- H05K 7/00: Constructional details common to different types of electric apparatus (casings, cabinets, drawers H05K5/00)
- H01B 1/22: the conductive material comprising metals or alloys
- H10F 77/211: {for photovoltaic cells}
- Y02E 10/50: Photovoltaic [PV] energy
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H01B: CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES (selection for magnetic properties H01F1/00; waveguides H01P {; printed circuits H05K})
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

## Abstract

A method of manufacturing a thick-film electrode comprising steps of: (a) applying a conductive paste onto a substrate comprising, (i) 100 parts by weight of a conductive powder, wherein the conductive powder is 16 to 49 weight percent based on the weight of the conductive paste; (ii) 0.5 to 10 parts by weight of a metal additive comprising bismuth (Bi); (iii) 1 to 25 parts by weight of a glass frit; and (iv) 50 to 300 parts by weight of an organic medium; and (b) firing the applied conductive paste to form the thick-film electrode, wherein thickness of the thick-film electrode is 0.5 to 15 μm.

## Claims

### Claim 1

A method of manufacturing a thick-film electrode comprising steps of:
(a) applying a conductive paste onto a substrate, the conductive paste comprising,
(i) 100 parts by weight of a conductive powder, wherein the conductive powder is 16 to 49 weight percent based on the weight of the conductive paste;
(ii) 0.5 to 10 parts by weight of a metal additive comprising bismuth (Bi);
(iii) 1 to 25 parts by weight of a glass frit; and
(iv) 50 to 300 parts by weight of an organic medium; and
(b) firing the applied conductive paste to form the thick-film electrode, wherein thickness of the thick-film electrode is 0.5 to 15 μm.

### Claim 2 (depends on 1)

The method of claim 1, wherein the metal additive comprises Bi at least 60 wt % based on the weight of the metal additive.

### Claim 3 (depends on 1)

The method of claim 1, wherein the metal additive comprises Bi element powder, Bi base alloy powder or a mixture thereof.

### Claim 4 (depends on 1)

The method of claim 1, wherein viscosity of the conductive paste is 10 to 200 Pascal second.

### Claim 5 (depends on 1)

The method of claim 1, wherein particle diameter (D50) of the metal additive is 0.5 to 10 μm.

### Claim 6 (depends on 1)

The method of claim 1, wherein the firing peak temperature in the firing step is 400 to 1000° C.

### Claim 7 (depends on 1)

The method of claim 1, wherein the substrate is made of glass, ceramic, metal or semiconductor.

### Claim 8 (depends on 1)

The method of claim 1, wherein amount of the applied conductive paste per unit area on the substrate is 0.005 to 0.4 g/inch2.

### Claim 9

A conductive paste to form a thick-film electrode with thickness of 0.5 to 15 μm comprising:
(i) 100 parts by weight of a conductive powder, wherein the conductive powder is 18 to 45 weight percent based on the weight of the conductive paste,
(ii) 0.5 to 10 parts by weight of a metal additive comprising bismuth (Bi),
(iii) 1 to 25 parts by weight of a glass frit, and
(iv) 50 to 300 parts by weight of an organic medium.

### Claim 10 (depends on 1)

An electrical device containing the thick-film electrode manufactured by the method of claim 1.

### Claim 11 (depends on 10)

The electrical device of claim 10 is a solar cell.

### Claim 12 (depends on 11)

The electrical device of claim 11, wherein the thick-film electrode is a tab electrode formed on a back &de of the solar cell.