# US 2014/0196775 A1 · Synthesis method of cu(in,ga)se2 nanorod or nanowire and materials including the same

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- Number: US 2014/0196775 A1
- Document ID: US20140196775A1
- Status: Published application
- Kind: A1
- Application number: 14/026,426
- Filed: 2013-09-13
- Published: 2014-07-17
- Earliest claimed: 2013-01-16
- Assignees: Korea Institute of Science and Technology
- Applicants: Korea Institute of Science and Technology
- Inventors: Ji Yeong LEE; Myoung Woon MOON; Won Kyung SEONG; Jong Ku PARK; Cheol Woong YANG; So Hye CHO; Kwang Ryeol LEE
- Web page: https://patentgrep.com/patent/US20140196775A1

## CPC

- H10F 77/1437: {Quantum wires or nanorods}
- H10F 77/126: {comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]}
- Y02E 10/541: CuInSe2 material PV cells
- Y02P 70/50: Manufacturing or production processes characterised by the final manufactured product
- H10F: INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- Y02E: REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02P: CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS

## Abstract

A method of fabricating CIGS nanorod or nanowire according to one exemplary embodiment of the present disclosure comprises a deposition preparation step of placing a raw material including copper, indium, gallium and selenium and a substrate, and a deposition step of growing CIGS nanorod or nanowire on the substrate by maintaining an internal temperature of a reactor, in which carrier gas flows at a constant flow rate, at a temperature in the range of 850 to 1000° C. According to the method, Cu(In,Ga)Se2 nanorod or nanowire as a direct transition type semiconductor material having substantially uniform composition, high crystallinity and high light absorption ratio can be fabricated.

## Claims

### Claim 1

A method of fabricating nanorod or nanowire, the method comprising:
a deposition preparation step of placing a substrate and raw materials comprising copper, indium, gallium and selenium; and
a deposition step of growing CIGS nanorod or nanowire, which contains a compound expressed by the following Chemical Formula 1, on the substrate by maintaining an internal temperature of a reactor at a temperature in the range of 850 to 1000° C., in which carrier gas flows at a substantially constant flow rate,
Cu(Ina,Gab)Se2 [Chemical Formula 1]
wherein the a is a real number in the range of 0<a<1, the b is a real number in the range of 0<b<1, and a+b=1.

### Claim 2 (depends on 1)

The method of claim 1, further comprising a cleaning step between the deposition preparation step and the deposition step,
wherein the cleaning step comprises a stage of removing impurities within the reactor by introducing the carrier gas into the reactor after changing the reactor into a vacuum state.

### Claim 3 (depends on 1)

The method of claim 1, wherein the raw material comprises a first material containing copper, indium, gallium and selenium sources, and a second material containing copper source, and
wherein a ratio between a first distance from the substrate to the first material and a second distance from the substrate to the second material is 1:1 to 3.

### Claim 4 (depends on 3)

The method of claim 3, wherein the copper source comprises one selected from the group consisting of copper, iodized copper and a combination thereof.

### Claim 5 (depends on 3)

The method of claim 3, wherein the substrate, the first material and the second material are substantially located along a straight line horizontal to a plane of a plate within the reactor.

### Claim 6 (depends on 3)

The method of claim 3, wherein assuming that the sum of indium and gallium as a reference is 1, the raw material contains 0.8 to 1.2 parts per weight of copper, and 2 to 2.3 parts per selenium.

### Claim 7 (depends on 3)

The method of claim 3, wherein during the deposition step, a temperature difference between the substrate and the first material is in the range of 60 to 90° C.

### Claim 8 (depends on 1)

The method of claim 1, wherein the deposition step further comprises a stage of increasing the internal temperature of the reactor, wherein the temperature increase is carried out at 10 to 30° C./min.

### Claim 9 (depends on 1)

The method of claim 1, wherein the deposition step is carried out for 1 to 7 hours.

### Claim 10 (depends on 1)

The method of claim 1, wherein the carrier gas contains one selected from the group consisting of hydrogen, nitrogen, argon, inert gas and combinations thereof.

### Claim 11 (depends on 1)

The method of claim 1, wherein the carrier gas is supplied by 5 to 200 sccm.

### Claim 12 (depends on 1)

The method of claim 1, wherein the Cu(In,Ga)Se2 nanorod or nanowire has a single crystalline structure which is epitaxially grown on the substrate.

### Claim 13

A material comprising CIGS nanorod or nanowire expressed by the following Chemical Formula 1,
Cu(Ina,Gab)Se2 [Chemical Formula 1]
wherein the a is a real number in the range of 0<a<1, the b is a real number in the range of 0<b<1, and a+b=1.

### Claim 14 (depends on 13)

The material of claim 13, wherein the CIGS nanorod or nanowire has a single crystalline and tetragonal structure.

### Claim 15 (depends on 13)

The material of claim 13, wherein the long-axis direction of the CIGS nanorod or nanowire is [110].

### Claim 16 (depends on 13)

The material of claim 13, wherein the CIGS nanorod or nanowire is located on a substrate, and an interface between the substrate and the nanorod or nanowire exhibits both a diffraction pattern of the substrate and a diffraction pattern of the nanorod or nanowire.

### Claim 17 (depends on 13)

The material of claim 13, wherein the nanorod is 1 to 100 μm in length, and 500 nm to 1 μm in diameter, and the nanowire is 10 nm to 500 nm in diameter and 1 to 100 μm in length.

### Claim 18 (depends on 13)

A solar cell having the material according to claim 13.

### Claim 19 (depends on 13)

A nanosensor having the material according to claim 13.