# US 2014/0196659 A1 · Apparatus for fabricating ingot and method for fabricating ingot

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0196659 A1
- Document ID: US20140196659A1
- Status: Published application
- Kind: A1
- Application number: 14/124,996
- Filed: 2012-06-07
- Published: 2014-07-17
- Earliest claimed: 2011-06-07
- Assignees: LG Innotek Co., Ltd.
- Applicants: L G Innotek Co., Ltd.
- Inventors: Dong Geun Shin; Chang Hyun Son
- Web page: https://patentgrep.com/patent/US20140196659A1

## CPC

- C30B 23/007: {Growth of whiskers or needles}
- C30B 23/00: Single-crystal growth by condensing evaporated or sublimed materials
- C30B 29/36: Carbides
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

An apparatus for fabricating an ingot includes a crucible for receiving a raw material, wherein the raw material has a shape extending in one direction.

## Claims

### Claim 1

An apparatus for fabricating an ingot, the apparatus comprising:
a crucible for receiving a raw material, wherein the raw material has a shape extending in one direction.

### Claim 2 (depends on 1)

The apparatus of claim 1, wherein the raw material is a compound comprising silicon and carbon.

### Claim 3 (depends on 1)

The apparatus of claim 1, wherein the raw material is a compound comprising silicon, carbon, oxygen, and hydrogen.

### Claim 4 (depends on 2)

The apparatus of claim 2, wherein the raw material is polymer comprising silicon and carbon.

### Claim 5 (depends on 4)

The apparatus of claim 4, wherein the raw material is polycarbosilane.

### Claim 6 (depends on 1)

The apparatus of claim 1, wherein the raw material has a column shape.

### Claim 7 (depends on 6)

The apparatus of claim 6, wherein the raw material has a fibrous shape.

### Claim 8 (depends on 1)

The apparatus of claim 1, wherein the extending shape has a length longer than a diameter thereof.

### Claim 9 (depends on 8)

The apparatus of claim 8, wherein the diameter is in a range of 0.1 μm to 500 μm.

### Claim 10 (depends on 1)

The apparatus of claim 1, wherein an empty space exists between raw materials.

### Claim 11 (depends on 10)

The apparatus of claim 10, wherein the raw material has a fill factor in a range of 10% to 90% in the crucible.

### Claim 12

A method for fabricating an ingot, the method comprising:
preparing a compound comprising silicon and carbon;
converting the compound into a silicon carbide fiber; and
growing the silicon carbide fiber in a single crystalline structure.

### Claim 13 (depends on 12)

The method of claim 12, wherein the compound comprises polycarbosilane.

### Claim 14 (depends on 12)

The method of claim 12, wherein the preparing of the compound comprises stabilizing the compound.

### Claim 15 (depends on 12)

The method of claim 12, wherein the converting of the compound comprises heat-treating the compound in a reduction atmosphere, an inert gas atmosphere or a vacuum atmosphere.

### Claim 16 (depends on 15)

The method of claim 15, wherein the heat-treating is performed at a temperature of 600° C. to 800° C. in a vacuum, nitrogen, hydrogen, or argon gas atmosphere.

### Claim 17 (depends on 12)

The method of claim 12, wherein an organic-to-inorganic conversion occurs during the converting of the compound.

### Claim 18 (depends on 12)

The method of claim 12, wherein the growing of the silicon carbide fiber comprises rising a temperature of the crucible.