# US 2014/0196658 A1 · Integrated charge production architecture > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0196658 A1 - Document ID: US20140196658A1 - Status: Published application - Kind: A1 - Application number: 14/215,722 - Filed: 2014-03-17 - Published: 2014-07-17 - Earliest claimed: 2012-08-21 - Inventors: Craig GRIMES; Thomas LATEMPA; Kevin KREISLER - Web page: https://patentgrep.com/patent/US20140196658A1 ## CPC - C30B 1/10: by solid state reactions or multi-phase diffusion - B01J 21/063: {Titanium; Oxides or hydroxides thereof} - B01J 35/39: Photocatalytic properties - B01J 35/58: Fabrics or filaments - B01J 35/70: characterised by their crystalline properties, e.g. semi-crystalline (catalysts comprising carbon B01J21/18; molecular sieves B01J29/00) - B01J 37/0228: {in several steps} - B01J 37/033: {Using Hydrolysis} - B01J 37/06: Washing {(B01J37/0009, B01J37/0018 take precedence)} - B01J 37/346: {of microwave energy} - B01J 37/348: {Electrochemical processes, e.g. electrochemical deposition or anodisation} - B82Y 10/00: Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic - C30B 1/02: by thermal treatment, e.g. strain annealing (C30B1/12 takes precedence) - C30B 7/10: by application of pressure, e.g. hydrothermal processes - C30B 29/34: Silicates - C30B 29/602: {Nanotubes} - H10D 62/118: {Nanostructure semiconductor bodies} - B01J 2235/30: Scanning electron microscopy; Transmission electron microscopy - H01G 9/2031: {comprising titanium oxide, e.g. TiO2 (H01G9/2036 takes precedence)} - H10D 62/122: {oriented at angles to substrates, e.g. perpendicular to substrates} - H10D 62/814: {Quantum box structures} - C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR - B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS - B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES - H01G: CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE (selection of specified materials as dielectric H01B3/00; capacitors having potential barriers H10D1/62, H10K10/10) ## Abstract The present invention relates to fabrication and application of compositions, devices, methods and systems for utilizing radiation more efficiently as compared to known systems. A synthesis method provides deposition of titania on a substrate without the use of an electrochemical reaction. An integrated architecture formed by the method of the present invention is comprised of vertically-oriented, one-dimensional, monocrystalline, n-type anatase nanowires in communication with a common transparent conductive substrate, and which are intercalated with a consortia of p-type quantum dots tuned for absorption of infrared and other radiation. ## Claims ### Claim 1 A method of growing crystalline anatase nanowires upon a substrate comprising the steps of: deposition of titania onto a clean substrate; conversion of the titania into titanate nanowires; and, treatment of the titanate nanowires to produce crystalline anatase nanowires. ### Claim 2 (depends on 1) The method of claim 1 wherein the clean substrate is obtained by the steps of: placing a substrate into an ultrasonic bath of isopropanol, followed by placing the substrate in ultrasonic bath of acetone, followed by placing the substrate in an ultrasonic bath of methanol, followed by placing the substrate in an ultrasonic bath of water; and drying the substrate with an inert gas. ### Claim 3 (depends on 1) The method of claim 1 wherein the clean substrate is obtained by the steps of: sonicating the substrate in a NaOH saturated ethanol solution, rinsing the substrate with de-ionized water; and drying the substrate with an inert gas ### Claim 4 (depends on 1) The method of claim 1 in which one or more solvents are used, either simultaneously or sequentially. ### Claim 5 (depends on 1) The method of claim 1 in which the solvent is comprised at least in part of one or more hydroxides, which are be selected from the group consisting of NaOH, KOH, LiOH, RbOH, Ca(OH)2 and NH4OH, to produce a nanowire composition containing the alkali ion of the hydroxide used. ### Claim 6 (depends on 5) The method of claim 5 wherein the solvent molarity is in the range of about 0.5 M to about 18 M. ### Claim 7 (depends on 1) The method of claim 1 wherein the treatment step includes immersion of the titanate nanowires in an acid solution. ### Claim 8 (depends on 7) The method of claim 7 wherein the acid solution is of the molarity range of about 0.01 M to about 5 M. ### Claim 9 (depends on 1) The method of claim 1 wherein the treatment step includes annealing of the titanate nanowires. ### Claim 10 (depends on 9) The method of claim 9 wherein the annealing step is completed in the presence of gas. ### Claim 11 (depends on 10) The method of claim 10 wherein the gas utilized in the annealing step is comprised at least in part of oxygen. ### Claim 12 (depends on 1) The method of claim 1 wherein the substrate is comprised of one or more types of glass, metal, ceramic, fiber, and/or polymer. ### Claim 13 (depends on 1) The method of claim 1 in which the crystalline anatase nanowires are grown upon one or both sides of the substrate, the substrate being flat. ### Claim 14 (depends on 1) The method of claim 1 in which the crystalline anatase nanowires are grown upon one or more sides of the substrate, where the substrate is a three dimensional structure, the structure constructed in the form of a cylinder, sphere, polyhedron, honeycomb, lattice, or other structures with regular or irregular dimensions. ### Claim 15 (depends on 1) The method of claim 1 wherein the substrate is comprised of or coated with graphene, or other material comprised at least in part of carbon. ### Claim 16 (depends on 1) The method of claim 1 wherein the substrate is coated on one or more sides with a transparent conductive oxide (“TCO”) layer. ### Claim 17 (depends on 16) The method of claim 16 in which the TCO layer is comprised of one or more oxides, which are selected from the group consisting of tin oxide (“SnO2”), indium-doped tin oxide (“ITO”), and fluorine-doped tin oxide (“FTO”). ### Claim 18 (depends on 1) The method of claim 1 wherein the substrate is modified for chemical and/or physical resistance. ### Claim 19 (depends on 1) The method of claim 1 wherein the substrate is coated on at least one side with a protective layer, which protective layer may be comprised of Polytetrafluoroethylene (“PTFE”), poly (methyl methacrylate) (“PMMA”) dissolved in acetone, photoresist, a layer of sputtered metal or metals, a sacrificial layer of spin-on glass, or other like protective layer. ### Claim 20 (depends on 1) The method of claim 1 in which one or more of the deposition, conversion and/or treatment steps includes the intercalation of quantum dots, of one or more sizes, and of one or more compositions, with or without the use of one or more dyes or other material for absorption of radiation, to sensitize the final anatase nanowire array for absorption of radiation. ### Claim 21 (depends on 1) The method of claim 1 in which one or more of the deposition, conversion and/or treatment steps includes the intercalation of one or more p-type semiconductors within the nanowire arrays, the nanowire arrays being n-type semiconducting anatase. ### Claim 22 (depends on 1) The method of claim 1 in which any of the deposition, conversion and/or treatment steps, or any aspect of such steps, are completed in one or more steps, in any sequence, at the same time as and/or together with one or more other steps, in a continuous or batch manner, and/or multiple times to iteratively produce the desired final crystalline anatase nanowire array.