# US 2014/0195723 A1 · Non-volatile configuration for serial non-volatile memory > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0195723 A1 - Document ID: US20140195723A1 - Status: Published application - Kind: A1 - Application number: 14/148,079 - Filed: 2014-01-06 - Published: 2014-07-10 - Earliest claimed: 2011-09-26 - Assignees: Micron Technology, Inc. - Applicants: Micron Technology, Inc. - Inventors: Paolo Rolandi; Sandra Lospalluti; Raffaele Bufano; Stefano Andreoli; Tommaso Zerilli - Web page: https://patentgrep.com/patent/US20140195723A1 ## CPC - G06F 12/0246: {in block erasable memory, e.g. flash memory} - G06F 9/44573: {Execute-in-place [XIP]} - G11C 16/10: Programming or data input circuits - G11C 16/20: Initialising; Data preset; Chip identification - G06F 2212/72: Details relating to flash memory management - G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N) - G11C: STATIC STORES (semiconductor memory devices H10B) ## Abstract Example embodiments for configuring a serial non-volatile memory device may comprise a non-volatile configuration register to store a configuration value received from the processor, the configuration value to specify one or more attributes of a memory access operation. The configuration value may be read at least in part in response to power being applied to the memory device. ## Claims ### Claim 1 (canceled) ### Claim 2 An apparatus comprising a serial non-volatile memory device, the apparatus comprising: a non-volatile configuration register configured to store a configuration value; and a control unit configured to read the configuration value from the non-volatile configuration register at least when the serial non-volatile memory device is powered up, wherein the control unit is configured to adjust an output driver strength of the serial non-volatile memory device for a read operation based on the configuration value, wherein at least a portion of the configuration value specifies the output driver strength. ### Claim 3 (depends on 2) The apparatus of claim 2, wherein the configuration value specifies an output driver strength in the range of 15 ohms to 90 ohms. ### Claim 4 (depends on 2) The apparatus of claim 2, wherein the non-volatile configuration register comprises a plurality of flash memory cells. ### Claim 5 (depends on 2) The apparatus of claim 2, wherein the non-volatile configuration register is configured to be updated at least in part in response to the serial non-volatile memory device receiving a subsequent configuration value from a processor. ### Claim 6 (depends on 2) The apparatus of claim 2, wherein the serial non-volatile memory device comprises a serial flash memory device. ### Claim 7 (depends on 2) The apparatus of claim 2, wherein the configuration value further specifies a minimum time before first access after power-up for the serial non-volatile memory device, and wherein the control unit is further configured to inhibit memory access operations until the minimum time elapses. ### Claim 8 (depends on 2) The apparatus of claim 2, wherein the configuration value further specifies an execute-in-place mode for the read operation. ### Claim 9 An electronically-implemented method of configuring a serial non-volatile memory device, the method comprising: reading a configuration value in a non-volatile configuration register of a serial non-volatile memory device at least in part in response to power being applied to the serial non-volatile memory device; and adjusting an output driver strength of the serial non-volatile memory device for a read operation based on the configuration value, wherein at least a portion of the configuration value specifies the output driver strength. ### Claim 10 (depends on 9) The method of claim 9, wherein the configuration value specifies an output driver strength in the range of 15 ohms to 90 ohms. ### Claim 11 (depends on 9) The method of claim 9, wherein the non-volatile configuration register comprises a plurality of flash memory cells. ### Claim 12 (depends on 9) The method of claim 9, further comprising updating the non-volatile configuration register at least in part in response to the serial non-volatile memory device receiving a subsequent configuration value from a processor. ### Claim 13 (depends on 9) The method of claim 9, wherein the serial non-volatile memory device comprises a serial flash memory device. ### Claim 14 (depends on 9) The method of claim 9, wherein the configuration value further specifies a minimum time before first access after power-up for the serial non-volatile memory device, and further comprising inhibiting memory access operations until the minimum time elapses. ### Claim 15 (depends on 9) The method of claim 9, wherein the configuration value further specifies an execute-in-place mode for the read operation. ### Claim 16 A system, comprising: a processor; and a serial non-volatile memory device coupled to the processor, the memory device comprising: a non-volatile configuration register configured to store a configuration value; and a control unit configured to read the configuration value from the non-volatile configuration register at least when the serial non-volatile memory device is powered up, wherein the control unit is configured to adjust an output driver strength of the serial non-volatile memory device for a read operation based on the configuration value, wherein at least a portion of the configuration value specifies the output driver strength. ### Claim 17 (depends on 16) The system of claim 16, wherein the configuration value specifies an output driver strength in the range of 15 ohms to 90 ohms. ### Claim 18 (depends on 16) The system of claim 16, wherein the non-volatile configuration register comprises a plurality of flash memory cells. ### Claim 19 (depends on 16) The system of claim 16, wherein the serial non-volatile memory device comprises a serial flash memory device. ### Claim 20 (depends on 16) The system of claim 16, wherein the configuration value further specifies a minimum time before first access after power-up for the serial non-volatile memory device, and wherein the control unit is further configured to inhibit memory access operations until the minimum time elapses. ### Claim 21 (depends on 16) The system of claim 16, wherein the configuration value further specifies an execute-in-place mode for the read operation.