# US 2014/0194555 A1 · Adhesive composition for semiconductor and adhesive film including the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0194555 A1 - Document ID: US20140194555A1 - Status: Published application - Kind: A1 - Application number: 14/204,128 - Filed: 2014-03-11 - Published: 2014-07-10 - Earliest claimed: 2011-12-22 - Assignees: Cheil Industries Inc. - Inventors: Jun Woo LEE; Sung Min KIM; In Hwan KIM; Baek Soung PARK; Su Mi LIM; Jae Won CHOI - Web page: https://patentgrep.com/patent/US20140194555A1 ## CPC - C09J 163/00: Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins - C09J 7/10: without carriers - C08K 5/0025: {Crosslinking or vulcanising agents; including accelerators} - C08K 5/3445: Five-membered rings - C08L 63/00: Compositions of epoxy resins; Compositions of derivatives of epoxy resins - C09J 2203/326: for bonding electronic components such as wafers, chips or semiconductors - C09J 2301/312: parameters being the characterizing feature - C09J 2301/408: additives as essential feature of the adhesive layer - C09J 2463/00: Presence of epoxy resin - H10W 72/01304: {using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates} - H10W 72/01336: {in solid form, e.g. by using a powder or by laminating a foil} - H10W 72/073: {of die-attach connectors} - H10W 72/07331: {Connecting techniques} - H10W 72/075: {of bond wires} - H10W 72/325: {Die-attach connectors having a filler embedded in a matrix} - H10W 72/352: {comprising metals or metalloids, e.g. solders} - H10W 72/353: {not comprising solid metals or solid metalloids, e.g. ceramics} - H10W 72/354: {comprising polymers} - H10W 90/732: {between stacked chips} - C09J: ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES (preparation of glue or gelatine C09H) - C08K: Use of inorganic or non-macromolecular organic substances as compounding ingredients (paints, inks, varnishes, dyes, polishes, adhesives C09) - C08L: COMPOSITIONS OF MACROMOLECULAR COMPOUNDS (compositions based on polymerisable monomers C08F, C08G; artificial filaments or fibres D01F; textile treating compositions D06) - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An adhesive composition for semiconductors, an adhesive film, and a semiconductor device, wherein, in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof. ## Claims ### Claim 1 An adhesive film for semiconductors, wherein, in a curing process including a first stage at a temperature ranging from 120° C. to 130° C. for 1 to 20 minutes, a second stage at a temperature ranging from 140° C. to 150° C. for 1 to 10 minutes, a third stage at a temperature ranging from 160° C. to 180° C. for 30 seconds to 10 minutes, and a fourth stage at a temperature ranging from 160° C. to 180° C. for 10 minutes to 2 hours, the adhesive film has a DSC curing rate in the first stage that is 40% or less of a total curing rate, a DSC curing rate in the fourth stage that is 30% to 60% higher than a DSC curing rate in the third stage, and DSC curing rates in each of the second and third stages that are 5% or more higher than a DSC curing rate of a preceding stage thereof. ### Claim 2 (depends on 1) The adhesive film as claimed in claim 1, wherein: the DSC curing rate in the second stage is 5% to 50% higher than the DSC curing rate in the first stage, and the DSC curing rate in the third stage is 5% to 25% higher than the DSC curing rate in the second stage. ### Claim 3 (depends on 1) The adhesive film as claimed in claim 1, comprising an imidazole curing accelerator represented by Formula 1 or 2, below: wherein, in Formula 1, R1 is hydrogen or a C1-C12 alkyl group, R2 is hydrogen or a C1-C6 alkyl group, R3 is a C1-C6 alkyl group bonded to an unsubstituted or substituted aryl or unsubstituted or substituted heteroaryl group, the substituted aryl group or the substituted heteroaryl group being substituted by one to three substituents selected from —COOH and —NH2, wherein, in Formula 2, R is a C1-C14 alkyl group or a phenyl group and n is an integer of 1 to 6. ### Claim 4 (depends on 3) The adhesive film as claimed in claim 3, wherein the imidazole curing accelerator is selected from the group of: ### Claim 5 An adhesive film for semiconductors, the adhesive film having: a void proportion of less than 10% after sequentially curing at 120° C. to 130° C. for 1 to 20 minutes and at 140° C. to 150° C. for 1 to 10 minutes, and a void proportion of less than 20% after sequentially curing at 120° C. to 130° C. for 1 to 20 minutes, at 140° C. to 150° C. for 1 to 10 minutes and at 160° C. to 180° C. for 30 seconds to 10 minutes. ### Claim 6 (depends on 5) The adhesive film as claimed in claim 5, wherein the adhesive film has a die shear strength of 1 kgf/chip or more after chip bonding at 120° C. for 1 second and followed by sequentially curing at 120° C. to 130° C. for 1 to 20 minutes and at 140° C. to 150° C. for 1 to 10 minutes. ### Claim 7 (depends on 5) The adhesive film as claimed in claim 5, wherein the adhesive film has a die shear strength of 10.0 kgf/chip or more after chip bonding at 120° C. for 1 second and followed by sequentially curing at 120° C. to 130° C. for 1 to 20 minutes, at 140° C. to 150° C. for 1 to 10 minutes, at 160° C. to 180° C. for 30 seconds to 10 minutes and at 160° C. to 180° C. for 10 minutes to 2 hours, and reflow three times at 260° C. ### Claim 8 An adhesive composition for semiconductors, the adhesive composition comprising: a thermoplastic resin; an epoxy resin; at least one curing resin selected from a phenolic curing resin and an amine curing resin; an imidazole curing accelerator represented by Formula 1 or 2, below; and a filler, wherein, in Formula 1, R1 is hydrogen or a C1-C12 alkyl group, R2 is hydrogen or a C1-C6 alkyl group, R3 is a C1-C6 alkyl group bonded to an unsubstituted or substituted aryl or unsubstituted or substituted heteroaryl group, the substituted aryl group or the substituted heteroaryl group being substituted by one to three substituents selected from —COOH and —NH2, wherein, in Formula 2, R is a C1-C14 alkyl group or a phenyl group and n is an integer of 1 to 6. ### Claim 9 (depends on 8) The adhesive composition for semiconductors as claimed in claim 8, wherein the composition includes, based on 100 parts by weight of the adhesive composition in terms of solid content: 10 to 60 parts by weight of the thermoplastic resin; 15 to 40 parts by weight of the epoxy resin; 5 to 25 parts by weight of the at least one curing resin selected from phenolic curing resins and amine curing resins; 0.05 to 10 parts by weight of the imidazole curing accelerator represented by Formula 1 or 2; and 1 to 30 parts by weight of the filler. ### Claim 10 (depends on 8) The adhesive composition for semiconductors as claimed in claim 8, wherein an amount of the thermoplastic resin is less than or equal to a sum of the amounts of the epoxy resin and the curing agent, in terms of solid content. ### Claim 11 (depends on 1) A semiconductor device connected using the adhesive film for semiconductors as claimed in claim 1. ### Claim 12 (depends on 8) A semiconductor device connected using the adhesive composition for semiconductors as claimed in claim 8.