# US 2014/0193982 A1 · Low thermal conductivity matrices with embedded nanostructures and methods thereof

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- Number: US 2014/0193982 A1
- Document ID: US20140193982A1
- Status: Published application
- Kind: A1
- Application number: 14/203,360
- Filed: 2014-03-10
- Published: 2014-07-10
- Earliest claimed: 2010-12-03
- Assignees: Alphabet Energy, Inc.
- Applicants: Alphabet Energy, Inc.
- Inventors: Mingqiang Yi; Gabriel A. Matus; Matthew L. Scullin; Chii Guang Lee; Sylvain Muckenhirn
- Web page: https://patentgrep.com/patent/US20140193982A1

## CPC

- H10P 14/63: {characterised by the formation processes}
- B82Y 40/00: Manufacture or treatment of nanostructures
- H10N 10/857: comprising compositions changing continuously or discontinuously inside the material
- H10P 14/68: Organic materials, e.g. photoresists
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

A matrix with at least one embedded array of nanowires and method thereof. The matrix includes nanowires and one or more fill materials located between the nanowires. Each of the nanowires including a first end and a second end. The nanowires are substantially parallel to each other and are fixed in position relative to each other by the one or more fill materials. Each of the one or more fill materials is associated with a thermal conductivity less than 50 Watts per meter per degree Kelvin. And, the matrix is associated with at least a sublimation temperature and a melting temperature, the sublimation temperature and the melting temperature each being above 350° C.

## Claims

### Claim at position 1

-43. (canceled)

### Claim 44

A method for making a matrix with at least one embedded array of nanostructures, the method comprising:
filling voids corresponding to nanostructures with at least one or more fill materials, each of the one or more fill materials being associated with a thermal conductivity less than 50 Watts per meter per degree Kelvin, the nanostructures including a semiconductor material; and
forming a matrix embedded with at least the nanostructures, the matrix being associated with at least a sublimation temperature and a melting temperature, the sublimation temperature and the melting temperature each being above 350° C.;
wherein the process for filling the voids includes:
keeping the nanostructures substantially parallel to each other; and
fixing the nanostructures in position relative to each other by the one or more fill materials.

### Claim 45 (depends on 44)

The method of claim 44, and further comprising forming the nanostructures including first ends and second ends respectively.

### Claim 46 (depends on 44)

The method of claim 44 wherein the one or more fill materials each include at least one selected from a group consisting of photoresist, spin-on glass, spin-on dopant, aerogel, xerogel, and oxide.

### Claim 47 (depends on 44)

The method of claim 44, and further comprising pretreating one or more surfaces of the nanostructures.

### Claim 48 (depends on 47)

The method of claim 47 wherein the process for pretreating includes altering the hydrophobicity of the one or more surfaces of the nanostructures.

### Claim 49 (depends on 44)

The method of claim 44, and further comprising preparing the one or more fill materials.

### Claim 50 (depends on 49)

The method of claim 49 wherein the process for preparing the one or more fill materials includes doping the one or more fill materials.

### Claim 51 (depends on 44)

The method of claim 44, and further comprising curing the one or more fill materials.

### Claim 52 (depends on 51)

The method of claim 51 wherein the process for curing the one or more fill materials includes heating the one or more fill materials to at least 300° C.

### Claim 53 (depends on 52)

The method of claim 52 wherein the process for curing the one or more fill materials includes heating the one or more fill materials to at least 500° C.

### Claim 54 (depends on 44)

The method of claim 44, and further comprising planarizing at least one surface of the matrix.

### Claim 55 (depends on 54)

The method of claim 54 wherein the process for planarizing at least one surface of the matrix includes polishing the surface of the matrix.

### Claim 56 (depends on 44)

The method of claim 44 wherein the process for filling the voids includes: applying the one or more fill materials in liquid form to the nanostructures; and rotating the nanostructures to remove at least a portion of the one or more fill materials.

### Claim 57 (depends on 44)

The method of claim 44 wherein the process for filling the voids includes dipping the nanostructures in the one or more fill materials.

### Claim 58 (depends on 44)

The method of claim 44 wherein the process for filling the voids includes depositing the one or more fill materials.

### Claim 59 (depends on 58)

The method of claim 58 wherein the process for depositing the one or more fill materials includes chemical vapor deposition.

### Claim 60 (depends on 58)

The method of claim 58 wherein the process for depositing the one or more fill materials includes atomic layer deposition.

### Claim 61 (depends on 58)

The method of claim 58 wherein the process for depositing the one or more fill materials includes using at least one selected from a group consisting of tetra-methyl-ortho-silicate (TMOS), tetra-etho-ortho-silicate (TEOS), and silane (SiH4).

### Claim 62 (depends on 58)

The method of claim 58 wherein the process for depositing the one or more fill materials includes forming at least a conformal layer of the one or more fill materials.

### Claim 63 (depends on 58)

The method of claim 58 wherein the process for depositing the one or more fill materials includes depositing the one or more fill materials in layers.

### Claim 64 (depends on 63)

The method of claim 63 wherein the process for depositing the one or more fill materials includes:
depositing a first layer, the first layer including one or more materials selected from a group consisting of SiN, TiN, BN, AlN, and CN;
depositing a second layer, the second layer including a first oxide; and
depositing a third layer, the third layer including a second oxide.

### Claim 65 (depends on 64)

The method of claim 64 wherein the first oxide is SiO2 and the second oxide is ZrO2.

### Claim 66 (depends on 64)

The method of claim 64 wherein:
the process for depositing the first layer includes depositing the first layer on surfaces of the nanostructures;
the process for depositing the second layer includes depositing the second layer on the first layer; and
the process for depositing the third layer includes depositing the third layer on the second layer.

### Claim 67 (depends on 64)

The method of claim 64 wherein the process for depositing the one or more fill materials further includes:
depositing a fourth layer, the fourth layer including the first oxide; and
depositing a fifth layer, the fifth layer including the second oxide.

### Claim 68 (depends on 44)

The method of claim 44 wherein
the one or more fill materials includes one or more first materials and one or more second materials;
the voids include a first plurality of voids and a second plurality of voids; and
the process for filling the voids includes:
filling the first plurality of voids with the one or more first materials; and
filling second plurality of voids with the one or more second materials.