# US 2014/0193978 A1 · Method of plasma processing and apparatuses using the method

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- Number: US 2014/0193978 A1
- Document ID: US20140193978A1
- Status: Published application
- Kind: A1
- Application number: 14/021,335
- Filed: 2013-09-09
- Published: 2014-07-10
- Earliest claimed: 2013-01-10
- Assignees: Samsung Electronics Co., Ltd.
- Inventors: Jung Hyun CHO; Hyung Joon KIM; Sang Jean JEON; Sang Heon LEE; Jeong Yun LEE; Kyung Yub JEON; Vasily PASHKOVSKIY
- Web page: https://patentgrep.com/patent/US20140193978A1

## CPC

- H01J 37/32183: {Matching circuits}
- H01J 37/321: {the radio frequency energy being inductively coupled to the plasma}
- H01J 37/32165: {Plural frequencies}
- H10P 50/242: {of Group IV materials}
- H10P 72/0402: {Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence)}
- H10P 72/0421: {for drying etching}
- H05H 1/24: Generating plasma {(nuclear fusion reactors G21B1/00; gas-filled discharge reactors H01J37/32)}
- H01J: ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS (spark-gaps H01T; electric arc lamps H05B31/00; particle accelerators H05H)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H05H: PLASMA TECHNIQUE (apparatus or processes specially adapted for producing X-rays H05G2/00); PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS

## Abstract

A method of operating a plasma processing device includes outputting a first RF power having a first frequency and a first duty ratio, and outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio. The outputting of the first RF power and the outputting of the second RF power are synchronized with each other.

## Claims

### Claim 1

A method of operating a plasma processing device comprising:
outputting a first RF power having a first frequency and a first duty ratio; and
outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio,
wherein the outputting of the first RF power and of the outputting of the second RF power are synchronized with each other.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
outputting a third RF power to a bias electrode in a plasma chamber; and
generating plasma in the plasma chamber based on the first RF power, the second RF power and an energy output from the bias electrode.

### Claim 3 (depends on 1)

The method of claim 1, further comprising:
supplying each of the first RF power and the second RF power to an antenna outside and above a plasma chamber through different transmission lines.

### Claim 4 (depends on 1)

The method of claim 1, further comprising:
supplying the first RF power to an antenna outside and above a plasma chamber; and
supplying the second RF power to at least one electrode outside and above the plasma chamber.

### Claim 5 (depends on 1)

The method of claim 1, wherein the outputting the first RF power includes,
generating the first RF power; and
outputting the first RF power using a first RF power pass filter, and
the outputting the second RF power includes,
generating the second RF power; and
outputting the second RF power using a second RF power pass filter.

### Claim 6 (depends on 1)

The method of claim 1, wherein the plasma processing device generates inductively coupled plasma.

### Claim 7

A plasma processing device comprising:
a plasma chamber;
an RF output circuit outside and above the plasma chamber;
a first RF power generation circuit configured to output a first RF power having a first frequency and a first duty ratio to the RF output circuit; and
a second RF power generation circuit configured to output a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio to the RF output circuit,
wherein the first RF power generation circuit and the second RF generation circuit are configured to output the first RF power and the second RF power, respectively, synchronously.

### Claim 8 (depends on 7)

The plasma processing device of claim 7, further comprising:
a single transmission line configured to supply the first RF power and the second RF power to an antenna of the RF output circuit.

### Claim 9 (depends on 7)

The plasma processing device of claim 7, further comprising:
a plurality of transmission lines each configured to supply one of the first RF power and the second RF power to an antenna of the RF output circuit.

### Claim 10 (depends on 7)

The plasma processing device of claim 7, wherein the first RF power generation circuit includes,
a first RF power generator configured to generate the first RF power; and
a first impedance matching circuit connected between the first RF power generator and a first transmission line configured to transmit the first RF power, and
the second RF power generation circuit includes,
a second RF power generator configured to generate the second RF power; and
a second impedance matching circuit connected between the second RF power generator and a second transmission line configured to transmit the second RF power.

### Claim 11 (depends on 10)

The plasma processing device of claim 10, wherein the first RF power generation circuit further includes a first filter connected between the first impedance matching circuit and the first RF transmission line and is configured to pass the first RF power, and
the second RF power generation circuit further includes a second filter connected between the second impedance matching circuit and the second RF transmission line and is configured to pass the second RF power.

### Claim 12 (depends on 10)

The plasma processing device of claim 10, wherein the first impedance matching circuit includes a first filter configured to pass the first RF power, and the second impedance matching circuit includes a second filter configured to pass the second RF power.

### Claim 13 (depends on 7)

The plasma processing device of claim 7, further comprising:
a first transmission line configured to supply the first RF power to an antenna included in the RF output circuit; and
a second transmission line configured to supply the second RF power to at least one electrode included in the RF output circuit.

### Claim 14 (depends on 13)

The plasma processing device of claim 13, wherein the first transmission line and the second transmission line are coaxial cables.

### Claim 15 (depends on 13)

The plasma processing device of claim 13, wherein the first RF power generation circuit includes,
a first RF power generator configured to generate the first RF power; and
a first impedance matching circuit connected between the first RF power generator and the first transmission line, and
the second RF power generation circuit includes,
a second RF power generator configured to generate the second RF power; and
a second impedance matching circuit connected between the second RF power generator and the second transmission line.

### Claim 16 (depends on 15)

The plasma processing device of claim 15, wherein the first RF power generation circuit further includes a first filter connected between the first impedance matching circuit and the first transmission line and is configured to pass the first RF power, and
the second RF power generation circuit further includes a second filter connected between the second impedance matching circuit and the second transmission line and is configured to pass the second RF power.

### Claim 17 (depends on 16)

The plasma processing device of claim 16, wherein the first impedance matching circuit includes the first filter, and
the second impedance matching circuit includes the second filter.

### Claim 18

A method of manufacturing a semiconductor device comprising:
outputting a first RF power having a first frequency and a first duty ratio to an RF output circuit;
outputting a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio to the RF output circuit;
outputting a third RF power to a bias electrode inside the plasma chamber;
generating plasma inside the plasma chamber using an energy output from the RF output circuit and an energy output from the bias electrode; and
processing a wafer on the bias electrode using an ion energy generated by the plasma,
wherein the outputting of the first RF power and the outputting of the second RF power are synchronized with each other.

### Claim 19 (depends on 18)

The method of claim 18, wherein the processing is etching.

### Claim 20 (depends on 18)

The method of claim 18, wherein each of the first RF power and the second RF power is supplied to an RF antenna of the RF output circuit through at least one transmission line.

### Claim 21 (depends on 18)

The method of claim 18, wherein the first RF power is supplied to an antenna of the RF output circuit through a first transmission line, and the second RF power is supplied to at least one electrode of the RF output circuit through a second transmission line.

### Claim 22 (depends on 18)

The method of claim 18, wherein the output time of the first RF power and an output time of the third RF power are synchronized with each other.

### Claim 23 (depends on 18)

A semiconductor package including a die included in the wafer manufactured according to a method of manufacturing a semiconductor device of claim 18.

### Claim 24

An RF power generation module comprising:
a first RF power generation circuit configured to output a first RF power having a first frequency and a first duty ratio to an RF output circuit through a first transmission line; and
a second RF power generation circuit configured to output a second RF power having a second frequency higher than the first frequency and a second duty ratio smaller than the first duty ratio to the RF output circuit through a second transmission line,
wherein the first RF power generation circuit and the second RF generation circuit are configured to output the first RF power and the second RF power, respectively, synchronously.

### Claim 25

A plasma processing device comprising:
a plasma chamber; and
an output circuit configured to apply an output power signal to the plasma chamber based on a first power signal having a first frequency and a first duty ratio and a second power signal having a second frequency and a second duty ratio, the second frequency being higher than the first frequency and the second duty ratio being smaller than the first duty ratio.

### Claim 26 (depends on 25)

The plasma processing device of claim 25, further comprising:
a first power generator circuit configured to generate the first power signal and apply the first power signal to the output circuit;
a second power generator circuit configured to generate the second power signal and apply the second power circuit to the output circuit; and
a third power generator circuit configured to apply a third power signal to the plasma chamber.

### Claim 27 (depends on 26)

The plasma processing device of claim 26, wherein the third power generator circuit is configured to apply the third power signal to a bias electrode of the plasma chamber.

### Claim 28 (depends on 26)

The plasma processing device of claim 26, wherein the first power generator circuit includes a filter configured to block the second power signal.

### Claim 29 (depends on 28)

The plasma processing device of claim 28, wherein the second power generator circuit includes a filter configured to block the first power signal.