# US 2014/0193971 A1 · Semiconductor device and method of manufacturing the same

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- Number: US 2014/0193971 A1
- Document ID: US20140193971A1
- Status: Published application
- Kind: A1
- Application number: 14/203,935
- Filed: 2014-03-11
- Published: 2014-07-10
- Earliest claimed: 2011-03-29
- Assignees: Seiko Instruments Inc.
- Applicants: Seiko Instruments Inc.
- Inventors: Masaru AKINO
- Web page: https://patentgrep.com/patent/US20140193971A1

## CPC

- H10W 72/019: {of bond pads}
- H10W 72/015: {of bond wires}
- H10W 72/536: {the connected ends being ball-shaped}
- H10W 72/59: Bond pads specially adapted therefor
- H10W 72/90: Bond pads, in general
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/925: {Bond pads having a filler embedded in a matrix}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 72/953: {not comprising solid metals or solid metalloids, e.g. polymers, ceramics or liquids}
- H10W 72/983: {Reinforcing structures, e.g. collars}
- H10W 74/00: Encapsulations, e.g. protective coatings
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

The semiconductor device includes: a semiconductor substrate; an insulating film provided on a surface of the semiconductor substrate; a porous metal film provided on the insulating film; a protective film provided on the porous metal film, and having an opening portion for defining a pad region; and a wire wire-bonded to the porous metal film in the pad region. The stress generated by the impact of wire-bonding is mostly absorbed in the porous metal film owing to the distortion of the porous metal film, preventing generation of cracks in the insulating film.

## Claims

### Claim 1

A method of manufacturing a semiconductor device, comprising:
providing an insulating film on a surface of a semiconductor substrate;
forming a porous metal film on a region of the insulating film, the porous metal film containing numerous voids;
providing a protective film on the porous metal film;
providing an opening portion in the protective film on the porous metal film, the opening portion defining a pad region; and
wire-bonding a wire to the porous metal film in the pad region.

### Claim 2 (depends on 1)

A method of manufacturing a semiconductor device according to claim 1; wherein the providing of the porous metal film comprises:
forming a first metal film on the insulating film;
forming a trench in the first metal film;
forming a second metal film by sputtering on the first metal film including the trench; and
filling the second metal film containing the voids in the trench.

### Claim 3 (depends on 2)

A method of manufacturing a semiconductor device according to claim 2, wherein the providing of the porous metal film comprises forming a metal film under a state in which an angle between a target used in sputtering and a semiconductor wafer is set to 30° to 80°, and a gas pressure of an argon gas used in the sputtering is set to 2 Pa to 3 Pa.

### Claim 4 (depends on 1)

A method of manufacturing a semiconductor device according to claim 1; wherein the providing of the porous metal film comprises:
applying conductive paste on the insulating film; and
baking the applied conductive paste.

### Claim 5 (depends on 4)

A method of manufacturing a semiconductor device according to claim 4; wherein the applying of the conductive paste comprises applying conductive paste containing metal nanoparticles having two types of particle diameters and an organic binder.

### Claim 6 (depends on 1)

A method of manufacturing a semiconductor device according to claim 1; wherein during the wire-bonding of the wire, the voids in the porous metal film are crushed due to the impact of the wire-bonding thereby absorbing stress generated by the impact and avoiding generation of cracks in the insulating film.