# US 2014/0193967 A1 · Method of forming an epitaxial layer on a substrate, and apparatus and system for performing the same

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- Number: US 2014/0193967 A1
- Document ID: US20140193967A1
- Status: Published application
- Kind: A1
- Application number: 14/152,191
- Filed: 2014-01-10
- Published: 2014-07-10
- Earliest claimed: 2013-01-10
- Assignees: Kookje Electric Korea Co., Ltd.; Samsung Electronics Co., Ltd.
- Applicants: Samsung Electronics Co., Ltd.
- Inventors: Sung-Ho KANG; Bong-Jin KUH; Yong-Kyu JOO; Sung-Ho HEO; Hee-Seok KIM; Yong-Sung PARK
- Web page: https://patentgrep.com/patent/US20140193967A1

## CPC

- H10P 14/27: {using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials}
- C30B 25/02: Epitaxial-layer growth
- C30B 29/06: Silicon
- H10P 14/24: using chemical vapour deposition [CVD]
- H10P 14/3411: {Silicon, silicon germanium or germanium}
- H10P 14/38: {characterised by treatments done after the formation of the materials}
- H10P 50/242: {of Group IV materials}
- H10P 72/0434: {mainly by convection}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR

## Abstract

In a method of forming an epitaxial layer, an etching gas may be decomposed to form decomposed etching gases. A source gas may be decomposed to form decomposed source gases. The decomposed source gases may be applied to a substrate to form the epitaxial layer on the substrate. A portion of the epitaxial layer on a specific region of the substrate may be etched using the decomposed etching gases. Before the etching gas is introduced into the reaction chamber, the etching gas may be previously decomposed. The decomposed etching gases may then be introduced into the reaction chamber to etch the epitaxial layer on the substrate. As a result, the epitaxial layer on the substrate may have a uniform distribution.

## Claims

### Claim 1

A method of forming an epitaxial layer on a substrate, the method comprising:
decomposing an etching gas to form decomposed etching gases;
decomposing a source gas to form decomposed sources gases;
applying the decomposed source gas to a substrate to form the epitaxial layer on the substrate; and
etching a portion of the epitaxial layer on a specific region of the substrate using the decomposed etching gases.

### Claim 2 (depends on 1)

The method of claim 1, wherein decomposing the etching gas comprises converting the etching gas into plasma.

### Claim 3 (depends on 1)

The method of claim 1, further comprising cooling the source gas to prevent the source gas from being decomposed before applying the source gas to the substrate.

### Claim 4 (depends on 3)

The method of claim 3, wherein cooling the source gas comprises supplying a cooling gas to a cooling unit to cool the source gas.

### Claim 5 (depends on 1)

The method of claim 1, further comprising etching a native oxide layer on the substrate.

### Claim 6 (depends on 1)

The method of claim 1, further comprising:
performing the decomposing of the source gas, the applying of the decomposed source gas to the substrate, and the etching a portion of the epitaxial layer in a reaction chamber.

### Claim 7 (depends on 6)

The method of claim 6, further comprising:
decomposing the etching gas to form the decomposed etching gases prior to supplying the etching gas to the reaction chamber.

### Claim 8 (depends on 6)

The method of claim 6, further comprising:
forming an epitaxial layer on a second substrate simultaneously with forming the epitaxial layer on the substrate by using a multi-substrate receiving structure inserted into the reaction chamber.

### Claim 9 (depends on 8)

The method of claim 8, wherein:
the multi-substrate receiving structure includes blocking plates disposed between upper substrate holders and lower substrate holders.

### Claim 10 (depends on 9)

The method of claim 9, wherein:
for each blocking plate, an upper substrate holder adjacent the blocking plate above the blocking plate is further from the blocking plate than a lower substrate holder adjacent the blocking plate below the blocking plate.

### Claim 11 (depends on 6)

The method of claim 6, further comprising:
supplying the etching gas and the source gas from a mixed gas line to an injecting unit in the reaction chamber.

### Claim 12 (depends on 11)

The method of claim 11, further comprising:
heating the reaction chamber; and
applying a cooling gas to the injecting unit to cool the etching gas and the source gas in the injecting unit.

### Claim 13

An apparatus for forming an epitaxial layer on a substrate, the apparatus comprising:
a reaction chamber;
a boat arranged in the reaction chamber and configured to receive a plurality of substrates;
a heater provided to the reaction chamber to heat the reaction chamber;
an injecting unit arranged in the reaction chamber to inject a source gas and an etching gas to the substrates in the boat; and
a decomposing unit for decomposing the etching gas introduced into the injecting unit to form decomposed etching gases.

### Claim 14 (depends on 13)

The apparatus of claim 13, further comprising a cooling unit for cooling the injecting unit to prevent the source gas from being decomposed in the injecting unit.

### Claim 15 (depends on 14)

The apparatus of claim 14, wherein the cooling unit comprises a cooling duct configured to surround the injecting unit, and a cooling gas passes through a passageway between the cooling duct and the injecting unit.

### Claim 16 (depends on 13)

The apparatus of claim 13, further comprising:
an etching gas line connected to the decomposing unit to supply the etching gas to the decomposing unit;
a mixed gas line connected between the injecting unit and the decomposing unit to supply the decomposed etching gases and the source gas to the injecting unit; and
a source gas line connected to the mixed gas line to supply the source gas.

### Claim 17 (depends on 13)

The apparatus of claim 13, further comprising:
an etching gas line connected to the decomposing unit to supply the etching gas to the decomposing unit;
a decomposed etching gas line extended from the decomposing unit to supply the decomposed etching gases; and
a source gas line for supplying the source gas,
wherein the injecting unit comprises:
a first injector connected to the source gas line to inject the source gas; and
a second injector connected to the decomposed etching gas line to inject the decomposed etching gases.

### Claim 18 (depends on 13)

The apparatus of claim 13, wherein the boat comprises:
a boat body configured to receive the substrates;
substrate holders formed on an inner surface of the boat body to support lower edge portions of the substrates; and
blocking plates arranged between the substrate holders to block interferences between the substrates,
wherein the substrate holders are arranged by the same vertical interval, and each of the blocking plates is positioned closer to an adjacent upper substrate holder than an adjacent lower substrate holder.

### Claim 19

A system for forming an epitaxial layer, the system comprising:
a plurality of loadlock chambers in which a plurality of substrates is on standby;
a plasma etching chamber arranged in front of the loadlock chambers to remove native oxide layers on the substrates;
apparatuses arranged in front of the loadlock chambers to form the epitaxial layer on the substrates; and
a transfer chamber arranged between the loadlock chambers and the plasma etching chamber and between the loadlock chambers and the apparatuses to transfer the substrates,
wherein each of the apparatuses comprises;
a reaction chamber;
a boat arranged in the reaction chamber and configured to receive the substrates;
a heater provided to the reaction chamber to heat the reaction chamber;
an injecting unit arranged in the reaction chamber to inject a source gas and an etching gas to the substrates in the boat; and
a decomposing unit for decomposing the etching gas introduced into the injecting unit to form decomposed etching gases.

### Claim 20 (depends on 19)

The system of claim 19, wherein each of the apparatuses further includes a cooling unit configured to cool the injecting unit.