# US 2014/0193964 A1 · Method of manufacturing semiconductor device

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- Number: US 2014/0193964 A1
- Document ID: US20140193964A1
- Status: Published application
- Kind: A1
- Application number: 13/905,323
- Filed: 2013-05-30
- Published: 2014-07-10
- Earliest claimed: 2013-01-07
- Assignees: National Chiao Tung University
- Applicants: National Chiao Tung University
- Inventors: Po-Tsun LIU; Wei-Ya WANG; Li-Feng TENG
- Web page: https://patentgrep.com/patent/US20140193964A1

## CPC

- H10P 36/20: Intrinsic gettering, i.e. thermally inducing defects by using oxygen present in the silicon body
- H10D 30/6756: {Amorphous oxide semiconductors}
- H10D 99/00: Subject matter not provided for in other groups of this subclass
- H10P 95/90: Thermal treatments, e.g. annealing or sintering
- H10P 95/94: {Hydrogenation or deuterisation, e.g. using atomic hydrogen from a plasma}
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES

## Abstract

The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.

## Claims

### Claim 1

A method of manufacturing semiconductor device by a supercritical fluid carried with a co-solvent to modify the defects of semiconductor device, comprising:
forming a gate dielectric layer on a gate by conducting a first hydrogen plasma treatment;
forming an active layer on the gate dielectric layer by conducting a second hydrogen plasma treatment; and
disposing a source and a drain on the active layer, wherein the semiconductor device having a plurality of defects, and the active layer being a metal oxide thin film;
annealing the semiconductor device, wherein the temperature for annealing the semiconductor device is between 350° C. and 450° C.;
transferring the semiconductor device into a chamber at 100° C. to 200° C. and 1500 psi to 3000 psi; and
injecting a supercritical fluid carried with a co-solvent into the chamber to modify the plurality of defects.

### Claim at position 2

2-10. (canceled)

### Claim 11 (depends on 1)

The method according to claim 1, wherein the supercritical fluid is selected from the group consisting of carbon dioxide, oxygen, ammonia, nitrogen, hydrogen and water vapor.