# US 2014/0193963 A1 · Techniques For Forming 3D Structures

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- Number: US 2014/0193963 A1
- Document ID: US20140193963A1
- Status: Published application
- Kind: A1
- Application number: 14/208,303
- Filed: 2014-03-13
- Published: 2014-07-10
- Earliest claimed: 2011-05-16
- Applicants: Varian Semiconductor Equipment Associates, Inc.
- Inventors: Ludovic Godet; Keping Han
- Web page: https://patentgrep.com/patent/US20140193963A1

## CPC

- H10W 10/014: {using trench refilling with dielectric materials, e.g. shallow trench isolations}
- H10D 30/024: {of fin field-effect transistors [FinFET]}
- H10D 84/0158: {the components including FinFETs}
- H10D 84/038: {using silicon technology, e.g. SiGe}
- H10P 14/6518: {by introduction of substances into an already-existing insulating layer}
- H10P 30/40: into insulating materials
- H10P 50/283: {by chemical means}
- H10W 10/17: formed using trench refilling with dielectric materials, e.g. shallow trench isolations
- H10D 86/011: {comprising FinFETs}
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A technique for forming 3D semiconductor structure is disclosed. In one embodiment, a substrate having at least two vertically extending fins is provided. An insulating material is deposited in the trench between the fins. After planarization, an ion implant process is performed to change the properties of the insulating material, specifically, the implanted region has a higher etch rate than the remainder of the insulating material. This higher etch rate region is then removed. This process of implanting and removing can be repeated until the insulating material reaches the desired height. In some embodiments, the substrate may be subjected to an anneal process prior to the removal of the higher etch rate region. The Gaussian implant depth profile may change into a box-like implant depth profile during the anneal process via thermal diffusion.

## Claims

### Claim 1

A method for forming a 3D structure, the method comprising:
providing a substrate comprising at least two vertically extending fins that are spaced apart from one another to define a trench;
depositing an insulating material in said trench between the at least two vertically extending fins;
forming a higher etch rate layer within a top portion of said insulating material; and
removing said higher etch rate layer.

### Claim 2 (depends on 1)

The method of claim 1, further comprising:
repeating said forming and removing until said insulating material reaches a desired height.

### Claim 3 (depends on 2)

The method of claim 2, wherein said desired height exposes a portion of said at least two vertically extending fins.

### Claim 4 (depends on 1)

The method of claim 1, further comprising annealing said substrate prior to said removing.

### Claim 5 (depends on 1)

The method of claim 1, wherein said forming comprises implanting a species of particles into said insulating material.

### Claim 6 (depends on 5)

The method of claim 5, wherein said species comprises hydrogen.

### Claim 7 (depends on 5)

The method of claim 5, wherein said species comprises silicon or oxygen.

### Claim 8 (depends on 5)

The method of claim 5, wherein said species comprises at least one of carbon, boron, arsenic, phosphorus and nitrogen.

### Claim 9 (depends on 5)

The method of claim 5, wherein said implanting is performed at a temperature ranging between about 25° C. to about 750° C.

### Claim 10

A method of forming a 3D structure, the method comprising:
providing a substrate comprising at least two vertically extending fins that are spaced apart from one another to define a trench and an insulating layer formed in said trench between the at least two vertically extending fins;
implanting a species into said insulating layer to form a higher etch rate layer within a top portion of said insulating layer;
removing said higher etch rate layer to reduce a height of said insulating layer; and
repeating said implanting and removing at least one time until said insulating layer reaches a desired height.

### Claim 11 (depends on 10)

The method of claim 10, wherein said implanting is performed at a temperature ranging between about 25° C. to about 750° C.

### Claim 12 (depends on 10)

The method of claim 10, wherein said desired height exposes a portion of said at least two vertically extending fins.

### Claim 13 (depends on 10)

The method of claim 10, wherein said removing is performed using a dry or wet etching process.

### Claim 14 (depends on 10)

The method of claim 10, further comprising annealing said substrate prior to said removing.

### Claim 15 (depends on 10)

The method of claim 10, wherein said species comprises hydrogen.

### Claim 16 (depends on 10)

The method of claim 10, wherein said species comprises silicon or oxygen.

### Claim 17

A method of forming a 3D structure, said method comprising:
providing a substrate comprising at least two vertically extending fins that are spaced apart from one another to define a trench;
depositing an insulating material in said trench between the at least two vertically extending fins to form an insulating layer;
implanting a hydrogen-containing species into said insulating layer to form a higher etch rate layer within a top portion of said insulating layer;
removing said higher etch rate layer after said implanting to reduce a height of said insulating layer; and
repeating said implanting and removing at least one time until said insulating layer reaches a desired height where a portion of said vertically extending fins is exposed.

### Claim 18 (depends on 17)

The method of claim 17, wherein said implanting is performed at a temperature ranging between about 25° C. to about 750° C.