# US 2014/0193949 A1 · Socket type mems bonding > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0193949 A1 - Document ID: US20140193949A1 - Status: Published application - Kind: A1 - Application number: 14/204,472 - Filed: 2014-03-11 - Published: 2014-07-10 - Earliest claimed: 2009-07-15 - Assignees: Taiwan Semiconductor Manufacturing Company, Ltd. - Applicants: Taiwan Semiconductor Manufacturing Company Ltd. - Inventors: Ting-Hau Wu - Web page: https://patentgrep.com/patent/US20140193949A1 ## CPC - B81C 1/00269: {Bonding of solid lids or wafers to the substrate} - B81C 2201/019: Bonding or gluing multiple substrate layers - B81C 2203/0109: Bonding an individual cap on the substrate - B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01) ## Abstract A method for fabricating an integrated circuit device is disclosed. The method includes providing a first substrate; bonding a second substrate to the first substrate, the second substrate including a microeelectromechanical system (MEMS) device; and bonding a third substrate to the first substrate. ## Claims ### Claim 1 A method comprising: providing a first substrate; bonding a second substrate to the first substrate, the second substrate including a microeelectromechanical system (MEMS) device; and bonding a third substrate to the first substrate. ### Claim 2 (depends on 1) The method of claim 1 wherein bonding the second substrate to the first substrate comprises performing a fusion bonding process or a eutectic bonding process. ### Claim 3 (depends on 1) The method of claim 1 wherein bonding the third substrate to the first substrate comprises performing a fusion bonding process or a eutectic bonding process. ### Claim 4 (depends on 1) The method of claim 1 wherein bonding the third substrate to the first substrate comprises extending a portion of the third substrate through the second substrate. ### Claim 5 (depends on 1) The method of claim 1 wherein extending the portion of the third substrate through the second substrate comprises: forming a socket in the second substrate, wherein a portion of the first substrate is exposed; forming a stand-off structure in the third substrate; and aligning the stand-off structure with the socket so that the stand-off structure contacts the exposed portion of the first substrate. ### Claim 6 (depends on 5) The method of claim 5 wherein forming the stand-off structure in the third substrate comprises forming a stand-off structure length slightly larger than a socket length and a stand-off structure width slightly smaller than a socket width. ### Claim 7 (depends on 5) The method of claim 5 wherein forming the socket in the substrate comprises patterning the MEMS device and the socket with a same mask. ### Claim 8 (depends on 5) The method of claim 5 wherein forming the stand-off structure in the third substrate comprises utilizing a single mask. ### Claim 9 A method comprising: providing a first, second, and third substrate; bonding the second substrate to the first substrate; patterning the second substrate to form a MEMS device and a cavity extending through the second substrate to expose a portion of the first substrate; patterning the third substrate to form a stand-off portion; and bonding the third substrate to the first substrate by bringing the stand-off portion in contact with the exposed portion of the first substrate through the cavity. ### Claim 10 (depends on 9) The method of claim 9 wherein patterning the second substrate to form the cavity and patterning the third substrate to form the stand-off portion comprises allowing for a space between a wall of the cavity and a wall of the stand-off structure when the stand-off portion contacts the exposed portion of the first substrate through the cavity. ### Claim 11 (depends on 9) The method of claim 9 wherein bonding the second substrate to the first substrate comprises forming a fusion bond and bonding the third substrate to the first substrate comprises forming a eutectic bonding. ### Claim 12 (depends on 9) The method of claim 9 wherein patterning the second substrate comprises patterning the MEMS device and the cavity with a same mask. ### Claim 13 (depends on 9) The method of claim 9 wherein patterning the third substrate to form a stand-off portion comprises utilizing a single mask. ### Claim 14 (depends on 11) The method of claim 11 wherein the fusion bond comprises oxide/silicon bonding or silicon/silicon bonding, and wherein the eutectic bond comprises metal/metal bonding or metal/semiconductor bonding ### Claim 15 A method comprising: providing a first substrate; positioning a second substrate over the first substrate, the second substrate being distinct from the first substrate and including a microeelectromechanical system MEMS device and a cavity extending through the second substrate; and positioning a stand-off portion of a third substrate through the cavity of the second substrate, wherein an open space separates the cavity of the second substrate from the stand-off portion of the third substrate. ### Claim 16 (depends on 15) The method of claim 15 wherein positioning the second substrate over the first substrate includes bonding the second substrate to the first substrate by a fusion bond. ### Claim 17 (depends on 16) The method of claim 16 wherein the fusion bond comprises oxide/silicon bonding or silicon/silicon bonding. ### Claim 18 (depends on 15) The method of claim 15 wherein the stand-off portion of the third substrate is bonded to the first substrate by a eutectic bond. ### Claim 19 (depends on 18) The method of claim 18 wherein the eutectic bond comprises metal/metal bonding or metal/semiconductor bonding. ### Claim 20 (depends on 17) The method of claim 17 wherein the stand-off portion of the third substrate is formed by patterning the third substrate.