# US 2014/0193947 A1 · Method for manufacturing semiconductor device > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0193947 A1 - Document ID: US20140193947A1 - Status: Published application - Kind: A1 - Application number: 14/208,280 - Filed: 2014-03-13 - Published: 2014-07-10 - Earliest claimed: 2011-12-22 - Assignees: Semiconductor Energy Laboratory Co., Ltd. - Applicants: Semiconductor Energy Laboratory Co., Ltd. - Inventors: Shunpei YAMAZAKI - Web page: https://patentgrep.com/patent/US20140193947A1 ## CPC - H10P 14/6519: {the substance being oxygen} - H10D 30/6755: {Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate} - H10D 30/6758: {characterised by the insulating substrates} - H10D 99/00: Subject matter not provided for in other groups of this subclass - H10P 14/20: of semiconductor materials - H10P 14/22: using physical deposition, e.g. vacuum deposition or sputtering - H10P 14/3426: {Oxides} - H10P 14/38: {characterised by treatments done after the formation of the materials} - H10P 30/20: into semiconductor materials, e.g. for doping - H10P 95/00: Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass - H10P 95/90: Thermal treatments, e.g. annealing or sintering - H10D 86/021: {of multiple TFTs} - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract Oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film are reduced and electric characteristics of a transistor including the oxide semiconductor film are improved. Further, a highly reliable semiconductor device including the transistor including the oxide semiconductor film is provided. In the transistor including the oxide semiconductor film, at least one insulating film in contact with the oxide semiconductor film contains excess oxygen. By the excess oxygen included in the insulating film in contact with the oxide semiconductor film, oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced. Note that the insulating film including the excess oxygen has a profile of the excess oxygen concentration having two or more local maximum values in the depth direction. ## Claims ### Claim 1 (canceled) ### Claim 2 A method for manufacturing a semiconductor device comprising the steps of: forming a first insulating film; performing a first oxygen addition on the first insulating film under a first condition; performing a second oxygen addition on the first insulating film subjected to the first oxygen addition, under a second condition; and forming an oxide semiconductor film over the first insulating film subjected to the second oxygen addition, wherein the first oxygen addition and the second oxygen addition are performed by an ion implantation method or an ion doping method, and wherein an acceleration voltage of the first condition and an acceleration voltage of the second condition are different from each other. ### Claim 3 (depends on 2) The method for manufacturing a semiconductor device according to claim 2, further comprising the step of heating the first insulating film and the oxide semiconductor film after forming the oxide semiconductor film. ### Claim 4 (depends on 2) The method for manufacturing a semiconductor device according to claim 2, wherein a depth in the first insulating film at which the largest value of a concentration of oxygen added under the first condition appears is different from a depth in the first insulating film at which the largest value of a concentration of oxygen added under the second condition appears. ### Claim 5 (depends on 2) The method for manufacturing a semiconductor device according to claim 2, wherein an amount of the oxygen added by the first oxygen addition is larger than or equal to 1×1014 ions/cm2 and smaller than or equal to 1×1016 ions/cm2, and wherein an amount of the oxygen added by the second oxygen addition is larger than or equal to 1×1014 ions/cm2 and smaller than or equal to 1×1016 ions/cm2. ### Claim 6 (depends on 2) The method for manufacturing a semiconductor device according to claim 2, further comprising the step of forming a second insulating film over the oxide semiconductor film. ### Claim 7 (depends on 6) The method for manufacturing a semiconductor device according to claim 6, further comprising the steps of: performing a third oxygen addition on the second insulating film under a third condition; and performing a fourth oxygen addition on the second insulating film subjected to the third oxygen addition, under a fourth condition, wherein the third condition and the fourth condition are different from each other. ### Claim 8 (depends on 7) The method for manufacturing a semiconductor device according to claim 7, wherein the third condition is an acceleration voltage of higher than or equal to 10 kV and lower than or equal to 100 kV by an ion implantation method or an ion doping method, and wherein the fourth condition is an acceleration voltage of higher than or equal to 1 kV and lower than 10 kV by an ion implantation method or an ion doping method. ### Claim 9 (depends on 7) The method for manufacturing a semiconductor device according to claim 7, wherein an amount of the oxygen added by the third oxygen addition is larger than or equal to 1×1014 ions/cm2 and smaller than or equal to 1×1016 ions/cm2, and wherein an amount of the oxygen added by the fourth oxygen addition is larger than or equal to 1×1014 ions/cm2 and smaller than or equal to 1×1016 ions/cm2. ### Claim 10 A method for manufacturing a semiconductor device comprising the steps of: forming an insulating film; performing a first oxygen addition on the insulating film under a first condition; performing a second oxygen addition on the insulating film subjected to the first oxygen addition, under a second condition; forming an oxide semiconductor film over the insulating film subjected to the second oxygen addition; forming a gate insulating film over the oxide semiconductor film; and forming a gate electrode over the gate insulating film wherein the first oxygen addition and the second oxygen addition are performed by an ion implantation method or an ion doping method, and wherein an acceleration voltage of the first condition and an acceleration voltage of the second condition are different from each other. ### Claim 11 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, further comprising the step of heating the insulating film, the oxide semiconductor film, and the gate insulating film after forming the gate electrode. ### Claim 12 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein a depth in the insulating film at which the largest value of a concentration of oxygen added under the first condition appears is different from a depth in the insulating film at which the largest value of a concentration of oxygen added under the second condition appears. ### Claim 13 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, wherein an amount of the oxygen added by the first oxygen addition is larger than or equal to 1×1014 ions/cm2 and smaller than or equal to 1×1016 ions/cm2, and wherein an amount of the oxygen added by the second oxygen addition is larger than or equal to 1×1014 ions/cm2 and smaller than or equal to 1×1016 ions/cm2. ### Claim 14 (depends on 10) The method for manufacturing a semiconductor device according to claim 10, further comprising the steps of: performing a third oxygen addition on the gate insulating film under a third condition; and performing a fourth oxygen addition on the gate insulating film subjected to the third oxygen addition, under a fourth condition, wherein the third condition and the fourth condition are different from each other. ### Claim 15 (depends on 14) The method for manufacturing a semiconductor device according to claim 14, wherein the third condition is an acceleration voltage of higher than or equal to 10 kV and lower than or equal to 100 kV by an ion implantation method or an ion doping method, and wherein the fourth condition is an acceleration voltage of higher than or equal to 1 kV and lower than 10 kV by an ion implantation method or an ion doping method. ### Claim 16 (depends on 14) The method for manufacturing a semiconductor device according to claim 14, wherein an amount of the oxygen added by the third oxygen addition is larger than or equal to 1×1014 ions/cm2 and smaller than or equal to 1×1016 ions/cm2, and wherein an amount of the oxygen added by the fourth oxygen addition is larger than or equal to 1×1014 ions/cm2 and smaller than or equal to 1×1016 ions/cm2.