# US 2014/0193932 A1 · Light-emitting device and method for manufacturing the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0193932 A1 - Document ID: US20140193932A1 - Status: Published application - Kind: A1 - Application number: 14/204,764 - Filed: 2014-03-11 - Published: 2014-07-10 - Earliest claimed: 2012-06-14 - Assignees: Epistar Corporation - Applicants: Epistar Corporation - Inventors: Rong-Ren LEE; Cheng-Hong CHEN; Chih-Peng NI; Chun-Yu LIN - Web page: https://patentgrep.com/patent/US20140193932A1 ## CPC - H10H 29/10: Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 (active-matrix LED displays H10H29/30) - H10D 1/47: Resistors having no potential barriers - H10H 20/814: having reflecting means, e.g. semiconductor Bragg reflectors - H10H 20/831: characterised by their shape - H10H 20/857: Interconnections, e.g. lead-frames, bond wires or solder balls - H10H 20/819: characterised by their shape, e.g. curved or truncated substrates - H10H 20/8215: {characterised by crystalline imperfections, e.g. dislocations; characterised by the distribution of dopants, e.g. delta-doping} - H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS - H10D: INORGANIC ELECTRIC SEMICONDUCTOR DEVICES ## Abstract A method for manufacturing a light-emitting device comprises the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation. ## Claims ### Claim 1 A method for manufacturing a light-emitting device comprising the steps of: providing a first substrate; forming a semiconductor structure on the first substrate, wherein the semiconductor structure comprises a first type semiconductor layer, a second type semiconductor layer, and an active layer between the first type semiconductor layer and the second type semiconductor layer; forming an isolation region through the second type semiconductor and the active layer to separate the semiconductor structure into a first part and a second part on the first substrate; and injecting an electrical current with a current density to the second part to make the second part to be permanently broken-down; wherein after the second part is permanently broken-down, the first part is capable of generating electromagnetic radiation and the second part is incapable of generating electromagnetic radiation. ### Claim 2 (depends on 1) The method according to claim 1, further comprising a step of separating the semiconductor structure from the first substrate. ### Claim 3 (depends on 2) The method according to claim 2, further comprising a step of bonding the semiconductor structure to a second substrate. ### Claim 4 (depends on 3) The method according to claim 3, further comprising a step of removing the first substrate after the step of bonding the semiconductor structure to the second substrate. ### Claim 5 (depends on 3) The method according to claim 3, wherein the second substrate is conductive. ### Claim 6 (depends on 3) The method according to claim 3, further comprising a step of forming a bonding layer on the second substrate for bonding to the semiconductor structure. ### Claim 7 (depends on 3) The method according to claim 3, further comprising a step of forming a reflecting layer on the second substrate. ### Claim 8 (depends on 2) The method according to claim 2, wherein the step of separating the semiconductor structure from the first substrate is before the step of forming the isolation region. ### Claim 9 (depends on 1) The method according to claim 1, wherein the step of forming the isolation region comprises forming a trench. ### Claim 10 (depends on 9) The method according to claim 9, wherein the step of forming a trench is performed by dry etching. ### Claim 11 (depends on 9) The method according to claim 9, wherein the trench is formed through the first type semiconductor layer and the active layer and exposes the second type semiconductor layer. ### Claim 12 (depends on 1) The method according to claim 1, wherein the electrical current simultaneously causes a reverse-bias to the second part and a forward-bias to the first part. ### Claim 13 (depends on 1) The method according to claim 1, further comprising a step of forming a first electrode on the second part of the semiconductor structure and a second electrode on the first part of the semiconductor structure. ### Claim 14 (depends on 1) The method according to claim 1, wherein the step of forming an isolation region is performed by ion implantation. ### Claim 15 (depends on 1) The method according to claim 1, wherein the current density applied to the second part of the semiconductor structure is greater than 80 A/cm2. ### Claim 16 (depends on 1) The method according to claim 1, wherein the second part comprises semiconductor material, and wherein the electrical current is substantially conducted through the semiconductor material.