# US 2014/0193931 A1 · Method of bonding a substrate to a semiconductor light emitting device

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- Number: US 2014/0193931 A1
- Document ID: US20140193931A1
- Status: Published application
- Kind: A1
- Application number: 14/131,686
- Filed: 2012-07-30
- Published: 2014-07-10
- Earliest claimed: 2011-08-30
- Assignees: Koninklijke Philips N.V.
- Inventors: Grigoriy Basin; John Edward Epler; Paul Scott Martin
- Web page: https://patentgrep.com/patent/US20140193931A1

## CPC

- H10H 20/85: Packages
- H10H 20/01: Manufacture or treatment
- H10H 20/018: {Bonding of wafers}
- H10H 20/851: Wavelength conversion means
- H10P 72/7402: {Wafer tapes, e.g. grinding or dicing support tapes}
- H10H 20/82: Roughened surfaces, e.g. at the interface between epitaxial layers
- H10H 20/8511: {characterised by their material, e.g. binder}
- H10H 20/8514: {characterised by their shape, e.g. plate or foil}
- H10H 20/8515: {not being in contact with the bodies}
- H10H 20/882: {Scattering means (H10H20/82 takes precedence)}
- H10W 72/01336: {in solid form, e.g. by using a powder or by laminating a foil}
- H10W 72/01935: {by plating, e.g. electroless plating or electroplating}
- H10W 72/01938: {in gaseous form, e.g. by CVD or PVD}
- H10W 72/0198: {batch processes}
- H10W 72/073: {of die-attach connectors}
- H10W 72/07307: {the auxiliary member being a temporary substrate, e.g. a removable substrate}
- H10W 72/07331: {Connecting techniques}
- H10W 72/07341: {Controlling the bonding environment, e.g. atmosphere composition or temperature}
- H10W 72/354: {comprising polymers}
- H10W 72/923: {Bond pads having multiple stacked layers}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- H10H: INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

A method according to embodiments of the invention includes positioning a flexible film (48) over a wafer of semiconductor light emitting devices, each semiconductor light emitting device including a semiconductor structure (13) including a light emitting layer sandwiched between an n-type region and a p-type region. The wafer of semiconductor light emitting devices is bonded to a substrate (50) via the flexible film (48). After bonding, the flexible film (48) is in direct contact with the semiconductor structures (13). The method further includes dividing the wafer after bonding the wafer to the substrate (50).

## Claims

### Claim 1

A method comprising:
positioning a flexible film over a wafer of semiconductor light emitting devices, each semiconductor light emitting device comprising a semiconductor structure comprising a light emitting layer sandwiched between an n-type region and a p-type region, wherein the flexible film is formed separate from the wafer, then positioned over the wafer;
bonding a substrate to the wafer of semiconductor light emitting devices via the flexible film, wherein after bonding the flexible film is in direct contact with the semiconductor structure; and
after bonding the wafer to the substrate, dividing the wafer.

### Claim 2 (depends on 1)

The method of claim 1 wherein:
each semiconductor structure further comprises a first metal contact disposed on the n-type region and a second metal contact disposed on the p-type region, wherein the first and second metal contacts are both formed on a first surface of the semiconductor structure;
the flexible film is in direct contact with a second surface of the semiconductor structure opposite the first surface.

### Claim 3 (depends on 1)

The method of claim 1 wherein the flexible film comprises a wavelength converting material.

### Claim 4 (depends on 1)

The method of claim 1 wherein the flexible film comprises silicone.

### Claim 5 (depends on 1)

The method of claim 1 wherein the flexible film is transparent.

### Claim 6 (depends on 1)

The method of claim 1 wherein bonding comprises:
bonding the flexible film to the semiconductor structure; and
after bonding the flexible film to the semiconductor structure, bonding the flexible film to the substrate.

### Claim 7 (depends on 1)

The method of claim 1 wherein the substrate is glass.

### Claim 8 (depends on 1)

The method of claim 1 wherein the semiconductor structure of each semiconductor light emitting device in the wafer is grown on a single growth substrate, the method further comprising:
bonding the wafer of semiconductor light emitting devices to a handle; and
after bonding the wafer of semiconductor light emitting devices to a handle, removing the growth substrate.

### Claim 9 (depends on 8)

The method of claim 8 further comprising texturing a surface of the semiconductor structure exposed by removing the growth substrate.

### Claim 10 (depends on 9)

The method of claim 9 wherein the flexible film is positioned over the textured surface.

### Claim 11 (depends on 8)

The method of claim 8 further comprising removing the handle after bonding a substrate to the wafer of semiconductor light emitting devices via the flexible film.