# US 2014/0193650 A1 · Electroconductive material, and connection method and connection structure using the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0193650 A1 - Document ID: US20140193650A1 - Status: Published application - Kind: A1 - Application number: 14/208,386 - Filed: 2014-03-13 - Published: 2014-07-10 - Earliest claimed: 2011-09-16 - Assignees: Murata Manufacturing Co., Ltd. - Applicants: Murata Manufacturing Co., Ltd. - Inventors: Kosuke Nakano; Hidekiyo Takaoka - Web page: https://patentgrep.com/patent/US20140193650A1 ## CPC - C22C 9/00: Alloys based on copper - B22F 1/09: {Mixtures of metallic powders} - B23K 1/00: Soldering, e.g. brazing, or unsoldering (B23K3/00 takes precedence) - B23K 35/025: {Pastes, creams or slurries} - B23K 35/24: Selection of soldering or welding materials proper (B23K35/34 takes precedence) - B23K 35/262: {Sn as the principal constituent} - B23K 35/302: {Cu as the principal constituent} - C22C 13/00: Alloys based on tin - C22C 13/02: with antimony or bismuth as the next major constituent - H05K 3/346: Solder materials or compositions specially adapted therefor - H05K 3/3485: Application of solder paste, slurry or powder (using printing techniques to form the desired conductive pattern of the printed circuit by applying conductive material H05K3/12) - Y10T 428/31678: Of metal - C22C: ALLOYS (treatment of alloys C21D, C22F) - B22F: WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER (making alloys by powder metallurgy C22C); APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER - B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM - H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS - Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION ## Abstract An electroconductive material that includes a metal component containing a first metal and a second metal having a higher melting point than the first metal, and has a configuration in which the first metal is Sn or an alloy containing Sn, and the second metal is a Cu—Cr alloy which forms, with the first metal, an intermetallic compound exhibiting a melting point of 310° C. or higher. The first metal can be Sn alone or an alloy containing Sn and at least one of Cu, Ni, Ag, Au, Sb, Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Pd, Si, Sr, Te, and P. ## Claims ### Claim 1 An electroconductive material including a metal component containing a first metal and a second metal having a higher melting point than the first metal, wherein the first metal is Sn or an alloy containing Sn, and the second metal is a Cu—Cr alloy which forms, with the first metal, an intermetallic compound having a melting point of 310° C. or higher. ### Claim 2 (depends on 1) The electroconductive material according to claim 1, wherein the electroconductive material contains a flux component. ### Claim 3 (depends on 2) The electroconductive material according to claim 2, wherein the flux comprises 7 to 15% by weight of the electroconductive material. ### Claim 4 (depends on 1) The electroconductive material according to claim 1, wherein the first metal is Sn alone. ### Claim 5 (depends on 1) The electroconductive material according to claim 1, wherein the alloy containing Sn includes at least one material selected from the group consisting of Cu, Ni, Ag, Au, Sb, Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Pd, Si, Sr, Te and P. ### Claim 6 (depends on 1) The electroconductive material according to claim 1, wherein an oxygen concentration in the first metal and the second metal is 2000 ppm or less. ### Claim 7 (depends on 6) The electroconductive material according to claim 6, wherein, the oxygen concentration in the first metal and the second metal is 10 to 1000 ppm. ### Claim 8 (depends on 1) The electroconductive material according to claim 1, wherein the first metal is 50% by volume or less of the electroconductive material. ### Claim 9 (depends on 1) The electroconductive material according to claim 1, wherein the electroconductive material is a foamed solder. ### Claim 10 (depends on 9) The electroconductive material according to claim 9, wherein the first metal is a plate-shaped metal and the second metal is a powder dispersed in the first metal. ### Claim 11 (depends on 9) The electroconductive material according to claim 9, wherein the first metal is a first plate-shaped metal and the second metal is a second plate-shaped metal included in the first metal. ### Claim 12 (depends on 1) A method of connecting objects to each other, the method comprising: heating the electroconductive material according to claim 1 to convert the first metal and the second metal to an intermetallic compound to connect the objects to each other. ### Claim 13 (depends on 1) A connection structure in which objects are connected to each other with the electroconductive material according to claim 1, wherein a connecting part connecting the objects together contains the second metal originating from the electroconductive material and an intermetallic compound containing the second metal and Sn as principal components, and a ratio of the first metal originating from the electroconductive material is 50% by volume or less of the electroconductive material. ### Claim 14 (depends on 13) The connection structure according to claim 13, wherein the intermetallic compound is formed between the second metal originating from the electroconductive material and the first metal originating from the electroconductive material. ### Claim 15 (depends on 14) The connection structure according to claim 14, wherein the first metal is Sn alone. ### Claim 16 (depends on 14) The connection structure according to claim 14, wherein the alloy containing Sn includes at least one material selected from the group consisting of Cu, Ni, Ag, Au, Sb, Zn, Bi, In, Ge, Al, Co, Mn, Fe, Cr, Mg, Pd, Si, Sr, Te, and P.