# US 2014/0193614 A1 · Method of patterning block copolymer layer and patterned structure

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- Number: US 2014/0193614 A1
- Document ID: US20140193614A1
- Status: Published application
- Kind: A1
- Application number: 14/078,921
- Filed: 2013-11-13
- Published: 2014-07-10
- Earliest claimed: 2013-01-08
- Assignees: Yonsei University, University—Industry Foundation (Uif); Samsung Electronics Co., Ltd.
- Applicants: Yonsei University, University - Industry Foundation(UIF); Samsung Electronics Co., Ltd.
- Inventors: Mi-Jeong KIM; In Taek HAN; June HUH; Seong-Jun Jeong; Haeng Deog KOH; Youn Jung PARK
- Web page: https://patentgrep.com/patent/US20140193614A1

## CPC

- G03F 7/0002: {Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping}
- B81C 1/00031: {Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002)}
- B82B 3/0066: {Orienting nanostructures}
- B82Y 30/00: Nanotechnology for materials or surface science, e.g. nanocomposites
- B82Y 40/00: Manufacture or treatment of nanostructures
- B81C 2201/0149: Forming nanoscale microstructures using auto-arranging or self-assembling material
- Y10T 428/24802: Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
- G03F: PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices B41B; photosensitive materials or processes for photographic purposes G03C; electrophotography, sensitive layers or processes therefor G03G)
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- B82B: NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
- B82Y: SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A method of patterning a block copolymer layer, the method including: providing a substrate with a guide pattern formed on a surface thereof; forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer including a block copolymer; and directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, and an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex having a first curvature radius r1and the inner apex having a second curvature radius r2, respectively, and the width of the patterning area W, the first curvature radius r1 and the second curvature radius r2, satisfy Inequation 1: 2 + 2 - ( 1 + 2 ) [ ( n + 2 ) 2 n  ( n + 1 ) ] 1 3 ≤ r 1 - r 2 W ≤ 2 + 2 - ( 1 + 2 ) [ ( n - 2 ) 2 n  ( n - 1 ) ] 1 3 . Inequation   1

## Claims

### Claim 1

A method of patterning a block copolymer layer, the method comprising:
providing a substrate with a guide pattern formed on a surface thereof;
forming a block copolymer layer on the substrate with the guide pattern, the block copolymer layer comprising a block copolymer; and
directing self-assembly of the block copolymer on the substrate according to the guide pattern to form n/2 discrete domains, wherein
the guide pattern includes a block copolymer patterning area having a 90-degree bending portion,
an outer apex and an inner apex of the 90-degree bending portion are each rounded,
the outer apex has a first curvature radius r1,
the inner apex has a second curvature radius r2, and
a width of a the block copolymer patterning area W, the first curvature radius r1, and the second curvature radius r2 satisfy Inequation 1:
2
+
2
-
(
1
+
2
)

[
(
n
+
2
)
2
n

(
n
+
1
)
]
1
3
≤
r
1
-
r
2
W
≤
2
+
2
-
(
1
+
2
)

[
(
n
-
2
)
2
n

(
n
-
1
)
]
1
3
,
Inequation


1
wherein n is an even number and represents a number of interfaces of the discrete domains.

### Claim 2 (depends on 1)

The method of claim 1, wherein n is an even number of greater than or equal to 4, and W satisfies the equation:
W
=
n
2

λ
o
wherein λo is a pattern period in a bulk phase of the block copolymer.

### Claim 3 (depends on 1)

The method of claim 1, wherein a length of a straight line Wd connecting the inner and outer apexes of the 90-degree bending portion in the guide pattern is equal to the width of the patterning area W.

### Claim 4 (depends on 1)

The method of claim 1, wherein the guide pattern is formed by chemical patterning, topographical patterning, optical patterning, electrical patterning, mechanical patterning, or a combination thereof.

### Claim 5 (depends on 1)

The method of claim 1, wherein the substrate comprises an organic monomolecular layer or a polymer brush layer.

### Claim 6 (depends on 1)

The method of claim 1, wherein the discrete domains of the self-assembled block copolymer comprise a lamellar structure which is vertically oriented relative to the substrate, or a cylindrical structure which is horizontally oriented relative to the substrate.

### Claim 7 (depends on 1)

The method of claim 1, further comprising selectively removing a portion of the discrete domains of the self-assembled block copolymer.

### Claim 8 (depends on 1)

The method of claim 1, wherein the guide pattern comprises a first bend pattern element disposed parallel to a second bend pattern element, a first jog pattern element disposed parallel to a second jog pattern element, or a combination thereof.

### Claim 9

A polymeric structure comprising:
a substrate, and
a polymeric layer having a pattern and disposed on the substrate,
wherein the pattern of the polymeric layer has a 90-degree bending portion,
wherein the pattern of the polymeric layer is formed by directing self-assembly of a block copolymer on the substrate according to a guide pattern to form n/2 discrete domains, and selectively removing some of the discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex has a first curvature radius r1, the inner apex has a second curvature radius r2, and a width of the block copolymer patterning area W, the first curvature radius r1, and the second curvature radius r2, satisfy Inequation 1:
2
+
2
-
(
1
+
2
)

[
(
n
+
2
)
2
n

(
n
+
1
)
]
1
3
≤
r
1
-
r
2
W
≤
2
+
2
-
(
1
+
2
)

[
(
n
-
2
)
2
n

(
n
-
1
)
]
1
3
Inequation


1
wherein n is an even number and represents the number of interfaces of the discrete domains.

### Claim 10 (depends on 9)

The polymeric structure of claim 9, wherein n is an even number of greater than or equal to 4, and W satisfies the equation:
W
=
n
2

λ
o
wherein λo denotes a pattern period in a bulk phase of the block copolymer.

### Claim 11 (depends on 9)

The polymeric structure of claim 9, wherein the discrete domains of the self-assembled block copolymer have a lamellar structure which is vertically oriented relative to the substrate, or a cylindrical structure which is horizontally oriented relative to the substrate.

### Claim 12 (depends on 9)

The polymeric structure of claim 9, wherein the substrate comprises an organic monomolecular layer or a polymer brush layer.

### Claim 13 (depends on 9)

The polymeric structure of claim 9, wherein the pattern of the polymeric layer comprises a bend unit pattern, a jog unit pattern, or a combination thereof.

### Claim 14 (depends on 9)

The polymeric structure of claim 9, wherein the substrate comprises a polymer, a metal, a metal oxide, a metal nitride, or a combination thereof.

### Claim 15

A trench-patterned structure having a nano-sized pattern including a 90-degree bending portion, wherein the structure comprises a polymer, a metal, a metal oxide, a metal nitride, or a combination thereof, and the nano-sized pattern is transferred from a block copolymer nanopattern that is formed by directing self-assembly of a block copolymer on a substrate according to a guide pattern to form n/2 discrete domains and selectively removing some of the discrete domains, wherein the guide pattern includes a block copolymer patterning area having a 90-degree bending portion, an outer apex and an inner apex of the 90-degree bending portion are each rounded, the outer apex has a first curvature radius r1, the inner apex has a second curvature radius r2, and a width of the block copolymer patterning area W, the first curvature radius r1, and the second curvature radius r2, satisfy Inequation 1:
2
+
2
-
(
1
+
2
)

[
(
n
+
2
)
2
n

(
n
+
1
)
]
1
3
≤
r
1
-
r
2
W
≤
2
+
2
-
(
1
+
2
)

[
(
n
-
2
)
2
n

(
n
-
1
)
]
1
3
[
Inequation


1
]
wherein, n is an even number and represents the number of interfaces of the discrete domains.

### Claim 16 (depends on 15)

The trench-patterned structure of claim 15, wherein n is an even number of greater than or equal to 4, and W satisfies the following equation:
W
=
n
2

λ
o
wherein λo denotes a pattern period in the bulk phase of the block copolymer.

### Claim 17 (depends on 15)

The trench patterned structure having a 90-degree bending portion of claim 15, wherein the nanosized pattern comprises a bend unit pattern, a jog unit pattern, or a combination thereof.

### Claim 18 (depends on 15)

The trench patterned structure of claim 15, wherein the structure comprises at least one selected from a metal selected from silicon, copper, chromium, iron, aluminum, hafnium, and gallium, oxides of the forgoing metals, nitrides of the forgoing metals, glass, an insulating polymer, and a conductive polymer.

### Claim 19 (depends on 15)

The trench patterned structure of claim 15, wherein the nanosized pattern has a 90 degree bending portion with a line width of less than or equal to about 50 nanometers.