# US 2014/0193581 A1 · Thin film deposition apparatus > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0193581 A1 - Document ID: US20140193581A1 - Status: Published application - Kind: A1 - Application number: 14/203,212 - Filed: 2014-03-10 - Published: 2014-07-10 - Earliest claimed: 2009-09-01 - Assignees: Samsung Display Co., Ltd. - Applicants: Samsung Display Co., Ltd. - Inventors: Young-Mook CHOI; Chang-Mog JO; Hee-Cheol KANG; Hyun-Sook PARK - Web page: https://patentgrep.com/patent/US20140193581A1 ## CPC - C23C 14/042: {using masks} - C23C 14/12: Organic material - C23C 14/243: {Crucibles for source material (C23C14/28, C23C14/30 take precedence)} - C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)} - H10K 71/231: {by etching of existing layers} - H10K 71/441: {in the presence of solvent vapors, e.g. solvent vapour annealing} - H10K 71/166: {using selective deposition, e.g. using a mask} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10K: ORGANIC ELECTRIC SOLID-STATE DEVICES ## Abstract A method for forming a thin film on a substrate includes discharging a deposition material from a deposition source through a plurality of deposition source nozzles arranged in a first direction on a deposition source nozzle unit disposed at a side of the deposition source; passing the deposition material through a patterning slit sheet; and depositing the deposition material on the substrate, while moving the substrate and the patterning slit sheet relative to each other. The patterning slit sheet is spaced apart from the substrate by a distance. A blocking member is disposed between the substrate and the deposition source and is moved along with the substrate to be positioned to screen at least one portion of the substrate, and the patterning slit sheet is disposed opposite to and spaced apart from the deposition source nozzle unit, and includes a plurality of patterning slits arranged in the first direction. ## Claims ### Claim 1 A method for forming a thin film on a substrate, the method comprising: discharging a deposition material from a deposition source through a plurality of deposition source nozzles arranged in a first direction on a deposition source nozzle unit disposed at a side of the deposition source; passing the deposition material through a patterning slit sheet; and depositing the deposition material on the substrate, while moving the substrate and the patterning slit sheet relative to each other, wherein the patterning slit sheet is spaced apart from the substrate by a distance, and a blocking member is disposed between the substrate and the deposition source and is moved along with the substrate to be positioned to screen at least one portion of the substrate, and wherein the patterning slit sheet is disposed opposite to and spaced apart from the deposition source nozzle unit, and comprises a plurality of patterning slits arranged in the first direction. ### Claim 2 (depends on 1) The method of claim 1, wherein the patterning slit sheet is between the substrate and the blocking member. ### Claim 3 (depends on 1) The method of claim 1, wherein the blocking member comprises a first blocking member that screens a first non-deposition region formed at a first end of the substrate and a second blocking member that screens a second non-deposition region formed at a second end of the substrate. ### Claim 4 (depends on 3) The method of claim 3, wherein the first and second blocking members are moved along with the substrate and at the same speed as that of the substrate, such that the first blocking member is disposed to block deposition on the first non-deposition region, and the second blocking member is disposed to block deposition on the second non-deposition region. ### Claim 5 (depends on 4) The method of claim 4, wherein positions of the first and second blocking members with respect to the substrate are constantly maintained. ### Claim 6 (depends on 1) The method of claim 1, wherein the patterning slit sheet is smaller than the substrate. ### Claim 7 (depends on 1) The method of claim 1, wherein the forming a thin film on a substrate further comprises passing the deposition material through a barrier plate assembly disposed between the deposition source nozzle unit and the patterning slit sheet, the barrier plate assembly comprising a plurality of barrier plates in the first direction that partition a space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces. ### Claim 8 A method for forming a thin film on a substrate, the method comprising: discharging a deposition material from a deposition source through a plurality of deposition source nozzles arranged in a first direction on a deposition source nozzle unit disposed at a side of the deposition source; passing the deposition material through a patterning slit sheet; and depositing the deposition material on the substrate, while moving the substrate and the patterning slit sheet relative to each other in the first direction, wherein a blocking member is disposed between the substrate and the deposition source and is moved along with the substrate to be positioned to screen at least one portion of the substrate, and the patterning slit sheet is disposed opposite to the deposition source nozzle unit and comprises a plurality of patterning slits arranged in a second direction perpendicular to the first direction. ### Claim 9 (depends on 8) The method of claim 8, wherein the patterning slit sheet is between the substrate and the blocking member. ### Claim 10 (depends on 8) The method of claim 8, wherein the blocking member comprises a first blocking member that screens a first non-deposition region formed at a first end of the substrate and a second blocking member that screens a second non-deposition region formed at a second end of the substrate. ### Claim 11 (depends on 10) The method of claim 10, wherein the first and second blocking members are moved along with the substrate and at the same speed as that of the substrate, such that the first blocking member is disposed to block deposition on the first non-deposition region, and the second blocking member is disposed to block deposition on the second non-deposition region. ### Claim 12 (depends on 11) The method of claim 11, wherein positions of the first and second blocking members with respect to the substrate are constantly maintained. ### Claim 13 (depends on 8) The method of claim 8, wherein the deposition source and the deposition source nozzle unit, and the patterning slit sheet are connected to each other by a connection member. ### Claim 14 (depends on 13) The method of claim 13, wherein the connection member guides movement of the discharged deposition material. ### Claim 15 (depends on 13) The method of claim 13, wherein the connection member seals a portion of a space between the deposition source and the deposition source nozzle unit, and the patterning slit sheet. ### Claim 16 (depends on 8) The method of claim 8, wherein the patterning slit sheet is spaced apart from the substrate by a distance. ### Claim 17 (depends on 8) The method of claim 8, wherein the patterning slit sheet is smaller than the substrate. ### Claim 18 A method for forming a thin film on a substrate, the method comprising: discharging a deposition material from a deposition source; passing the deposition material through a plurality of patterning slits on a patterning slit sheet; and depositing the deposition material on the substrate, while moving the substrate and the patterning slit sheet relative to each other, wherein a blocking member is positioned between the substrate and the deposition source to screen a non-deposition region of the substrate and is moved along with the substrate to maintain a screening position with respect to the non-deposition region of the substrate, and wherein a patterning slit sheet is disposed to face and spaced apart from the deposition source, and the plurality of patterning slits is arranged in a first direction. ### Claim 19 (depends on 18) The method of claim 18, wherein the patterning slit sheet is between the substrate and the blocking member. ### Claim 20 (depends on 18) The method of claim 18, wherein the blocking member comprises a first blocking member that screens a first non-deposition region formed at a first end of the substrate and a second blocking member that screens a second non-deposition region formed at a second end of the substrate.