# US 2014/0193580 A1 · Method for making patterns on the surface of a substrate using block copolymers

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- Number: US 2014/0193580 A1
- Document ID: US20140193580A1
- Status: Published application
- Kind: A1
- Application number: 14/122,576
- Filed: 2012-05-18
- Published: 2014-07-10
- Earliest claimed: 2011-05-27
- Assignees: Centre National de la Recherche Scientifique (CNRS); Commissariat à I'Énergie Atomique et aux Énergies Alternatives
- Inventors: Raluca Tiron; Stéphanie Gaugiran; Xavier Chevalier; Serge Tedesco
- Web page: https://patentgrep.com/patent/US20140193580A1

## CPC

- B05D 5/00: Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures
- B81C 1/00031: {Regular or irregular arrays of nanoscale structures, e.g. etch mask layer (photomechanical, e.g. photolithographic, production of textured or patterned surfaces G03F7/00; lithographic processes for making patterned surfaces using printing and stamping G03F7/0002)}
- B81C 2201/0149: Forming nanoscale microstructures using auto-arranging or self-assembling material
- B81C 2201/0159: Lithographic techniques not provided for in B81C2201/0157
- H10P 76/204: {of organic photoresist masks}
- H10P 76/4085: {characterised by the processes involved to create the masks}
- B05D: PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL (conveying articles or workpieces through baths of liquid B65G, e.g. B65G49/02)
- B81C: PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS (making microcapsules or microballoons B01J13/02; processes or apparatus specially adapted for the manufacture or treatment of piezoelectric, electrostrictive or magnetostrictive elements per se H10N30/01)
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method for making patterns on the surface of a substrate by graphoepitaxy, includes depositing a layer of resin on the surface of the substrate; making patterns in the resin on the surface of a substrate; curing the patterns in the resin by producing a layer of amorphous carbon on the surface of the patterns in the resin; depositing a layer of statistical copolymer after curing the patterns in the resin; grafting the layer of statistical copolymer onto the patterns in the resin by annealing; and depositing a layer of a block copolymer into the spaces defined by the patterns in the resin after curing the patterns and the grafting of the layer of statistical copolymer.

## Claims

### Claim 1

Method for making patterns on the surface of a substrate by graphoepitaxy comprising:
depositing a layer of resin on the surface of the substrate;
making patterns in the resin on the surface of a substrate;
curing the patterns in the resin by producing a layer of amorphous carbon on the surface of the patterns in the resin;
depositing a layer of random copolymer after curing the patterns in the resin;
grafting the layer of random copolymer onto the patterns in the resin by annealing;
depositing a layer of block copolymer into spaces defined by the patterns in the resin after the curing and the grafting.

### Claim 2 (depends on 1)

Method according to claim 1, wherein the curing includes treating the patterns in the resin by a gaseous plasma.

### Claim 3 (depends on 1)

Method according to claim 1, wherein the curing includes bombarding the patterns in the resin with ions.

### Claim 4 (depends on 1)

Method according to claim 1, wherein the patterns in the resin are formed by optical lithography of the layer of resin.

### Claim 5 (depends on 1)

Method according to claim 1, further comprising depositing an antireflective layer on the surface of the substrate.

### Claim 6 (depends on 1)

Method according to claim 1 further comprising, following the depositing of the layer of block copolymer, reorganising the layer of block copolymer by annealing.

### Claim 7 (depends on 6)

Method according to claim 6, further comprising, following the reorganising, eliminating one of the phases of the layer of reorganised block copolymer.

### Claim 8 (depends on 1)

Method according to claim 1 wherein the random copolymer is composed of the same monomers as those which compose the block copolymer.

### Claim 9 (depends on 1)

Method according to claim 1 wherein the block copolymer is a lamellar block copolymer.

### Claim 10 (depends on 1)

Method according to claim 1, wherein the block copolymer is a cylindrical block copolymer.

### Claim 11 (depends on 2)

Method according to claim 2, wherein the gaseous plasma is a HBr plasma.

### Claim 12 (depends on 3)

Method according to claim 3, wherein the ions are helium or argon ions.