# US 2014/0193574 A1 · Graphene manufacturing system and the method thereof > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0193574 A1 - Document ID: US20140193574A1 - Status: Published application - Kind: A1 - Application number: 13/934,449 - Filed: 2013-07-03 - Published: 2014-07-10 - Earliest claimed: 2013-01-10 - Inventors: Chao-Hui Yeh - Web page: https://patentgrep.com/patent/US20140193574A1 ## CPC - C01B 32/186: by chemical vapour deposition [CVD] - C01B 2204/04: Specific amount of layers or specific thickness - C01B 2204/22: Electronic properties - C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C} ## Abstract The present invention discloses a graphene manufacturing system and the method thereof. In the prior arts, constant gas flows are used for the growth of graphene layers on work pieces. In contrast, the present invention makes use of multiple pulses of gas flows to grow graphene layers with low sheet resistivity. ## Claims ### Claim 1 A graphene manufacturing system for growing graphene layers on the surface of a work piece comprising of following items: a furnace body having a working chamber for holding the work piece; a first gas source, connected with the working chamber for providing the working chamber with a first gas; a first valve, configured between the working chamber and the first gas source; a second gas source, connected with the working chamber for providing the working chamber with a second gas; a second valve, configured between the working chamber and the second gas source; a third gas source, connected with the working chamber for providing the working chamber with a third gas; a third valve, configured between the working chamber and the third gas source; and a control device, coupled with the first valve, second valve and third valve for storing a process data. The process data is corresponding to a first process, second process and third process, each process seriatim comprising a first command, second command, third command and fourth command. The first command for increasing the flow rate of the corresponding valve, the second command for decreasing the flow rate of the corresponding valve, the third command for increasing the flow rate of the corresponding valve, the fourth command for decreasing the flow rate of the corresponding valve; wherein, the control device controls the first valve, second valve and third valve respectively by the first process, second process and third process. The control device controls the flow rate of the valves to import the first gas into the working chamber, the high temperature catalyzes the decomposition of the first gas to generate a plurality of carbon atoms, and the plurality of carbon atoms form the graphene layers on the insulated surfaces of the work piece. ### Claim 2 (depends on 1) The graphene manufacturing system of claim 1, wherein the work piece comprises a copper foil or a substrate with copper coating. ### Claim 3 (depends on 1) The graphene manufacturing system of claim 1, wherein the work piece comprises an insulated substrate, the insulated substrate comprises silica, alumina, boron nitride, hafnia or zirconia. ### Claim 4 (depends on 1) The graphene manufacturing system of claim 1, wherein the first gas is a carbonaceous gas, the carbonaceous gas comprises methane, acetylene, ethylene, benzene, methanol or ethanol, the second gas comprises hydrogen, the third gas comprises argon. ### Claim 5 (depends on 1) The graphene manufacturing system of claim 1, wherein the graphene layers consist of 1 to 10 graphene sheets, and the resistivity of each graphene sheet before doping is between 200 to 600Ω/□, (Ω/sq.), the resistivity of each graphene sheet after doping is between 75 to 200Ω/□, (Ω/sq.). ### Claim 6 A method for manufacturing graphene, applied to grow graphene layers on an insulated surface of a work piece, comprising the following steps of: preparing a furnace body having a working chamber; preparing the work piece; preparing a first gas, second gas and third gas; setting the work piece in the working chamber; importing the first gas into the working chamber by a first process; importing the second gas into the working chamber by a second process; and importing the third gas into the working chamber by a third process; wherein, the first process comprises a preprocess stage and a following reacting stage, the reacting stage comprises a first segment, second segment, third segment and fourth segment. The import flow rate of the first gas during the first segment is higher than during the preprocess stage, the average import flow rate of the first gas during the second segment is lower than during the first segment, the average import flow rate of the first gas during the third segment is higher than during the second segment, the average import flow rate of the first gas during the fourth segment is lower than during the third segment. The high temperature catalyzes the decomposition of the first gas to generate a plurality of carbon atoms, and the plurality of carbon atoms form the graphene layers on the insulated surfaces of the work piece. ### Claim 7 (depends on 6) The method for manufacturing graphene of claim 6, wherein the work piece comprises a copper foil or a substrate with copper coating. ### Claim 8 (depends on 6) The method for manufacturing graphene of claim 6, wherein the first gas is a carbonaceous gas, the carbonaceous gas comprises methane, acetylene, ethylene, benzene, methanol or ethanol, the second gas comprises hydrogen, the third gas comprises argon. ### Claim 9 (depends on 6) The method for manufacturing graphene of claim 6, wherein the volume flow rate of the first gas during the first segment and the third segment are between 2 sccm and 640 sccm. The volume flow rate of the second gas during the first segment and the third segment are between 8 sccm and 860 sccm. The volume flow rate of the third gas during the first segment and the third segment are between 300 sccm and 4,200 sccm. ### Claim 10 (depends on 6) The method for manufacturing graphene of claim 6, wherein the surfaces of the work piece can be processed by a plasma treatment. ### Claim 11 (depends on 6) The method for manufacturing graphene of claim 6, wherein at least one seed can be configured on the surface of the work piece.