# US 2014/0193573 A1 · Apparatus of forming electroconductive substance and method of forming the same > Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt - Number: US 2014/0193573 A1 - Document ID: US20140193573A1 - Status: Published application - Kind: A1 - Application number: 14/206,615 - Filed: 2014-03-12 - Published: 2014-07-10 - Earliest claimed: 2011-09-13 - Assignees: Fujikura Ltd.; University of Yamanashi - Applicants: Fujikura Ltd.; University of Yamanashi - Inventors: Eiichi KONDOH; Masahiro MATSUBARA; Yuto TAKEUCHI; Mitsuhiro WATANABE; Satoshi YAMAMOTO; Naohiro KIKUKAWA - Web page: https://patentgrep.com/patent/US20140193573A1 ## CPC - C23C 18/40: using reducing agents - C23C 18/1603: {coating on selected surface areas} - C23C 18/1619: {Apparatus for electroless plating} - C23C 18/1685: {with supercritical condition, e.g. chemical fluid deposition} - C23C 18/31: Coating with metals - H10P 14/40: of conductive or resistive materials - H10W 20/023: {the interconnections being through-semiconductor vias} - H10W 20/0261: {characterised by the filling method or the material of the conductive fill} - C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04) - H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10 - H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10 ## Abstract An apparatus forms an electroconductive substance in micro holes, the apparatus introduces a fluid, that includes at least a metal complex dissolved in a supercritical fluid or a subcritical fluid, into a reaction chamber including a first space and a second space, allows a planar substrate to be disposed in the fluid that continuously moves in a specific direction in the reaction chamber. A second surface of the substrate is vertical to the specific direction in which the fluid that is introduced into the first space moves; the substrate is supported throughout the entire first surface so that the fluid travels in the micro holes of the substrate from the second surface toward the first space of the substrate; and a support member including a fine communication hole through which the fluid passes toward the second space is disposed. ## Claims ### Claim 1 An apparatus of forming an electroconductive substance comprising: a reaction chamber including a first space into which a fluid is introduced and a second space through which the fluid is discharged, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid; and a support member which supports a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber, and includes a first surface, a second surface, and micro holes, the support member supporting the substrate throughout an entire first surface so that the second surface of the substrate is vertical to the specific direction in which the fluid that is introduced into the first space moves and so that the fluid travels in the micro holes of the substrate from the second surface toward the first surface of the substrate, and includes fine communication holes through which the fluid passes toward the second space. ### Claim 2 (depends on 1) The apparatus of forming an electroconductive substance according to claim 1, further comprising: an introduction portion which projects in the first space of the reaction chamber, includes an introduction opening configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber. ### Claim 3 (depends on 1) The apparatus of forming an electroconductive substance according to claim 1, further comprising: an introduction portion which projects in the first space of the reaction chamber, includes a plurality of introduction openings configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber. ### Claim 4 A method of forming an electroconductive substance, comprising: preparing: a reaction chamber including a first space into which a fluid is introduced and a second space through which the fluid is discharged; a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber, and includes a first surface, a second surface, and micro holes; and a support member which supports the first surface of the substrate, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid; disposing the support member so that the second surface of the substrate is vertical to the specific direction in which the fluid that is introduced into the first space moves and so that the fluid travels in the micro holes of the substrate from the second surface toward the first surface of the substrate; and allowing the fluid to transfer from the first space to the second space; and forming an electroconductive substance on inner walls of the micro holes provided in the substrate. ### Claim 5 (depends on 4) The method of forming an electroconductive substance according to claim 4, wherein a semiconductor substrate or a glass substrate is used as the substrate. ### Claim 6 (depends on 4) The method of forming an electroconductive substance according to claim 4, wherein the fluid contains a reducing agent dissolved therein. ### Claim 7 An apparatus of forming an electroconductive substance comprising: a reaction chamber into which a fluid is introduced, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid, wherein a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber, and includes micro holes, and the substrate is disposed so that the fluid moves along both surfaces of the substrate. ### Claim 8 (depends on 7) The apparatus of forming an electroconductive substance according to claim 7, wherein the substrate is disposed so that both surfaces of the substrate are parallel to the specific direction. ### Claim 9 (depends on 7) The apparatus of forming an electroconductive substance according to claim 7, wherein the substrate is disposed so that both surfaces of the substrate are not parallel to the specific direction. ### Claim 10 (depends on 7) The apparatus of forming an electroconductive substance according to claim 7, further comprising: a holding portion which holds an angle formed by both surfaces of the substrate with respect to the specific direction, and is provided in the reaction chamber. ### Claim 11 A method of forming an electroconductive substance, comprising: preparing: a reaction chamber into which a fluid is introduced; and a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber are prepared, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid; and allowing the fluid to transfer along both surfaces of the substrate; and forming an electroconductive substance on inner walls of the micro holes provided in the substrate. ### Claim 12 (depends on 11) The method of forming an electroconductive substance according to claim 11, wherein a semiconductor substrate or a glass substrate is used as the substrate. ### Claim 13 (depends on 11) The method of forming an electroconductive substance according to claim 11, wherein the fluid contains a reducing agent dissolved therein. ### Claim 14 An apparatus of forming an electroconductive substance comprising: a reaction chamber including a first space into which a fluid is introduced and a second space through which the fluid is discharged, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid; and a support member which supports a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber, and includes a first surface, a second surface, and micro holes, the support member supporting the first surface of the substrate so that the second surface of the substrate is vertical to the specific direction in which the fluid that is introduced into the first space moves and so that the fluid travels in the micro holes of the substrate from the second surface toward the first surface of the substrate. ### Claim 15 (depends on 14) The apparatus of forming an electroconductive substance according to claim 14, further comprising: an introduction portion which projects in the first space of the reaction chamber, includes an introduction opening configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber. ### Claim 16 (depends on 14) The apparatus of forming an electroconductive substance according to claim 14, further comprising: an introduction portion which projects in the first space of the reaction chamber, includes a plurality of introduction openings configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber. ### Claim 17 An apparatus of forming an electroconductive substance comprising: a reaction chamber including a first space into which a fluid is introduced and a second space through which the fluid is discharged, the fluid including at least a metal complex dissolved in a supercritical fluid or a subcritical fluid; and a support member which supports a planar substrate which is disposed in the fluid that continuously moves in a specific direction in the reaction chamber, and includes a first surface, a second surface, and micro holes, the support member supporting the first surface of the substrate so that the second surface of the substrate is vertical to the specific direction in which the fluid that is introduced into the first space moves and so that the fluid travels in the micro holes of the substrate from the second surface toward the first surface of the substrate, and includes a guide path through which the fluid passes toward the second space and which is provided around the substrate. ### Claim 18 (depends on 17) The apparatus of forming an electroconductive substance according to claim 17, further comprising: an introduction portion which projects in the first space of the reaction chamber, includes an introduction opening configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber. ### Claim 19 (depends on 17) The apparatus of forming an electroconductive substance according to claim 17, further comprising: an introduction portion which projects in the first space of the reaction chamber, includes a plurality of introduction openings configured to be located close to the second surface of the substrate, and introduces the fluid into the reaction chamber.