# US 2014/0193321 A1 · Method for producing higher silanes

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- Number: US 2014/0193321 A1
- Document ID: US20140193321A1
- Status: Published application
- Kind: A1
- Application number: 14/206,554
- Filed: 2014-03-12
- Published: 2014-07-10
- Earliest claimed: 2007-02-14
- Assignees: Evonik Degussa GmbH
- Inventors: Juergen Erwin LANG; Hartwig RAULEDER; Ekkehard MUEH
- Web page: https://patentgrep.com/patent/US20140193321A1

## CPC

- B01J 19/088: {giving rise to electric discharges (for heating purposes H05B7/00; for the production of ozone C01B13/11, H01T19/00)}
- C01B 21/068: with silicon
- C01B 21/0823: {Silicon oxynitrides}
- C01B 32/907: Oxycarbides; Sulfocarbides; Mixture of carbides
- C01B 33/04: Hydrides of silicon
- C01B 33/107: Halogenated silanes
- C01B 33/12: Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B 33/36: having base-exchange properties but not having molecular sieve properties (regeneration thereof B01J49/00)
- C01G 17/00: Compounds of germanium
- C07F 7/083: {Syntheses without formation of a Si-C bond}
- C07F 7/30: Germanium compounds
- B01J 2219/0803: employing electric or magnetic energy
- B01J 2219/0894: Processes carried out in the presence of a plasma
- C01P 2002/86: by NMR- or ESR-data
- B01J: CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- C01B: NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; {METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C}
- C01G: COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F (metal hydrides {monoborane, diborane or addition complexes thereof} C01B6/00; salts of oxyacids of halogens C01B11/00; peroxides, salts or peroxyacids C01B15/00; thiosulfates, dithionites, polythionates C01B17/64; compounds containing selenium, or tellurium C01B19/00; binary compounds of nitrogen with metals C01B21/06; azides C01B21/08; {compounds containing nitrogen, other non-metals and metal C01B21/082}; metal amides C01B21/092; nitrites C01B21/50; {compounds of noble gases C01B23/0005}; phosphides C01B25/08; salts of oxyacids of phosphorus C01B25/16; carbides C01B32/90; compounds containing silicon C01B33/00; compounds containing boron C01B35/00; compounds having molecular sieve properties but not having base-exchange properties C01B37/00; compounds having molecular sieve and base-exchange properties, e.g. crystalline zeolites, C01B39/00; cyanides C01C3/08; salts of cyanamide C01C3/16; thiocyanates C01C3/20)
- C07F: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM (metal-containing porphyrins C07D487/22)
- C01P: INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS

## Abstract

The invention relates to a method for producing dimeric and/or trimeric silicon compounds, in particular silicon halogen compounds. The claimed method is also suitable for producing corresponding germanium compounds. The invention also relates to a device for carrying out said method to the use of the produced silicon compounds.

## Claims

### Claim 1

A process for preparing dimeric and/or trimeric silicon compounds of the general formula (Ia) or the germanium compounds of the general formula (Ib)
where R1 to R8 are each hydrogen and/or halogen, where the halogen is selected from chlorine, bromine and/or iodine, where R1 to R8 denote identical or different radicals in the formula (Ia) or (Ib), with the proviso that at least one of the R1 to R8 radicals is a halogen, and n=0 or 1,
a) wherein a silicon compound of the general formula (IIa)
or a germanium compound of the general formula (IIb)
where R9 to R12 are each hydrogen, organyl, where the organyl comprises a linear, branched and/or cyclic alkyl having 1 to 18 carbon atoms, linear, branched and/or cyclic alkenyl having 2 to 8 carbon atoms, unsubstituted or substituted aryl and/or corresponding benzyl, and/or halogen, and the halogen is selected from chlorine, bromine and/or iodine, where R9 to R12 denote identical or different radicals in the formula (IIa) or (IIb) and n=1 or 2,
the silicon compound of the formula (IIa) in the presence of one or more compounds of the general formula (IIIa)
or the germanium compound of the formula (IIb) in the presence of one or more compounds of the general formula (IIIb)
where R13 to R16 are each hydrogen, organyl, where the organyl comprises a linear, branched and/or cyclic alkyl having 1 to 18 carbon atoms, linear, branched and/or cyclic alkenyl having 2 to 8 carbon atoms, unsubstituted or substituted aryl and/or corresponding benzyl, and/or halogen, and the halogen is selected from chlorine, bromine and/or iodine, where R13 to R16 denote identical or different radicals of the formula (IIIa) or (IIIb) and n=1 or 2, especially with the proviso that it is a hydrogen-containing compound, is exposed to a nonthermal plasma and
b) one or more pure silicon compounds of the general formula (Ia) or germanium compounds of the general formula (Ib) are obtained from the resulting phase.