# US 2014/0192839 A1 · Method and Apparatus for Measuring Temperature of Semiconductor Layer

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- Number: US 2014/0192839 A1
- Document ID: US20140192839A1
- Status: Published application
- Kind: A1
- Application number: 14/126,010
- Filed: 2011-08-02
- Published: 2014-07-10
- Earliest claimed: 2011-08-02
- Assignees: YSystems, Ltd.
- Inventors: Yves Lacroix
- Web page: https://patentgrep.com/patent/US20140192839A1

## CPC

- G01K 7/01: using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence)
- C23C 16/52: Controlling or regulating the coating process {(C23C16/45557, C23C16/279 take precedence)}
- C30B 25/16: Controlling or regulating (controlling or regulating in general G05)
- G01K 11/18: of materials which change translucency
- H10P 72/0602: {Temperature monitoring}
- G01K: MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR (radiation pyrometry G01J5/00)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- C30B: SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, B01J3/06); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys C22B); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices B22D; working of plastics B29; modifying the physical structure of metals or alloys C21D, C22F); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof H10); APPARATUS THEREFOR
- H10P: GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10

## Abstract

A method and apparatus are provided to directly and accurately detect a temperature of a semiconductor layer at the time of depositing and film-forming the semiconductor layer. First wavelength laser light having light transmissivity attenuated in a first temperature range and second wavelength laser light having light transmissivity attenuated in a second temperature range are applied to the semiconductor layer. A light receiving unit receives light passing through the semiconductor layer. An attenuation range of the laser light transmissivity is detected when the temperature of the semiconductor layer is increased and the detection light quantity of the first wavelength laser light is attenuated. As the temperature continues to increase and the detection light quantity of the second wavelength laser light exceeds an attenuation start point, the temperature of the semiconductor layer is calculated based on a detection light quantity at a predetermined measurement time and the attenuation range.

## Claims

### Claim 1

A temperature measuring method for measuring a temperature of a semiconductor layer during deposition in a chamber, comprising
using a first wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer rises and reaches a first range and a second wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer reaches a second range that is higher than the first range,
applying the first wavelength light and the second wavelength light to the semiconductor layer along a common path and detecting quantities of the first wavelength light and the second wavelength light with a light detecting device facing the semiconductor layer, and
when the detected quantity of the second wavelength light starts to decrease after the temperature of the semiconductor layer exceeds the first range during which the detected quantity of the first wavelength light decreases, calculating a current temperature of the semiconductor layer within the second range from a current detected quantity of the second wavelength light and a decrease in the detected quantity of the first wavelength light.

### Claim 2 (depends on 1)

The method for measuring a temperature of a semiconductor layer according to claim 1, wherein the current temperature of the semiconductor layer is calculated such that (a maximum temperature of the second range)+a temperature difference of the second range)×{(a decrease in the detected quantity of the second wavelength light from a decrease starting point to a current point)/(the decrease in the detected quantity of the first wavelength light)}.

### Claim 3 (depends on 1)

The method for measuring a temperature of a semiconductor layer according to claim 1, wherein a temperature of the semiconductor layer during deposition is calculated from the current detected quantity of the second wavelength light acquired during deposition of the semiconductor layer onto the substrate, and the decrease in the detected quantity of the first wavelength light, and where a heating temperature of the substrate is controlled to keep the calculated temperature within the second range.

### Claim 4 (depends on 1)

The method for measuring a temperature of a semiconductor layer according to claim 1, wherein when the semiconductor layer is being deposited on the substrate with source molecules supplied onto a heated transparent substrate in the chamber, the first wavelength light and the second wavelength light are applied to a surface of the semiconductor layer and a diffuse reflected light passing through the semiconductor layer and a diffuse reflected light reflected from the surface of the semiconductor layer are detected with the light detecting device facing the surface of the semiconductor layer.

### Claim 5 (depends on 1)

The method for measuring a temperature of a semiconductor layer according to claim 1, wherein the temperature of the semiconductor layer is also measured by detecting an infrared light emitted from the semiconductor layer with a temperature change measuring device, and a measurement error of the temperature change measuring device is corrected based on the calculated current temperature within the second range.

### Claim 6

A temperature measuring method for measuring a temperature of a semiconductor layer during deposition in a chamber, comprising
using a first wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer rises and reaches a first range and a second wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer reaches a second range that is higher than the first range,
applying the first wavelength light and the second wavelength light to the semiconductor layer along a common path and detecting quantities of the first wavelength light and the second wavelength light with a light detecting device facing the semiconductor layer, and
when a change in the detected quantity of the second wavelength light is observed by monitoring the detected quantity of the second wavelength light after the temperature of the semiconductor layer exceeds the first range during which the detected quantity of the first wavelength light decreases, determining whether the change in the detected quantity of the second wavelength light is due to a change in the temperature of the semiconductor layer or other factors based on a current change in the detected quantity of the first wavelength light.

### Claim 7 (depends on 6)

The method for measuring a temperature of a semiconductor layer according to claim 6, wherein when a change in the detected quantity of the first wavelength light is observed along with the change in the detected quantity of the second wavelength light, it is determined that the change in the detected quantity of the second wavelength light is due to a factor other than a change in the temperature of the semiconductor layer.

### Claim 8 (depends on 7)

The method for measuring a temperature of a semiconductor layer according to claim 7, wherein a surface roughness of the semiconductor layer is calculated from at least one of the change in the detected quantity of the first wavelength light or the change in the detected quantity of the second wavelength light.

### Claim 9 (depends on 6)

The method for measuring a temperature of a semiconductor layer according to claim 6, wherein when a change in the detected quantity of the first wavelength light is not observed along with the change in the detected quantity of the second wavelength light, it is determined that the change in the detected quantity of the second wavelength light is due to a change in the temperature of the semiconductor layer.

### Claim 10 (depends on 6)

The method for measuring a temperature of a semiconductor layer according to claim 6, wherein when the semiconductor layer is being deposited on the substrate with source molecules supplied onto a heated transparent substrate in the chamber, the first wavelength light and the second wavelength light are applied to a surface of the semiconductor layer and a diffuse reflected light passing through the semiconductor layer and a diffuse reflected light reflected from the surface of the semiconductor layer are detected with the light detecting device facing the surface of the semiconductor layer.

### Claim 11

A temperature measuring apparatus for measuring a temperature of a semiconductor layer during deposition in a chamber, comprising
a light emitting device for applying a first wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer rises and reaches a first range and a second wavelength light whose transmittance to the semiconductor layer starts to decrease as the temperature of the semiconductor layer reaches a second range that is higher than the first range,
a light detecting device for detecting the first wavelength light and the second wavelength light,
the light emitting device and the light detecting device facing a surface of the semiconductor layer, enabling the first wavelength light and the second wavelength light to be applied to the surface along a common path and a diffuse reflected light passing through the semiconductor layer and a diffuse reflected light reflected from the surface to be detected by the light detecting device, and
a controller for calculating the temperature of the semiconductor layer from quantities of the first wavelength light and the second wavelength light detected by the light detecting device,
wherein when the detected quantity of the second wavelength light starts to decrease after the temperature of the semiconductor layer exceeds the first range during which the detected quantity of the first wavelength light decreases, the controller calculates a current temperature of the semiconductor layer within the second range from a current detected quantity of the second wavelength light and a decrease in the detected quantity of the first wavelength light.

### Claim 12

(canceled)

### Claim 13 (depends on 11)

The apparatus for measuring a temperature of a semiconductor layer according to claim 11, wherein when a change in the detected quantity of the second wavelength light is observed by monitoring the detected quantity of the second wavelength light after the temperature of the semiconductor layer exceeds the first range during which the detected quantity of the first wavelength light decreases, the controller determines whether the change in the detected quantity of the second wavelength light is due to a change in the temperature of the semiconductor layer or other factors based on a current change in the detected quantity of the first wavelength light.

### Claim 14 (depends on 13)

The apparatus for measuring a temperature of a semiconductor layer according to claim 13, wherein when there is a change in both the detected quantity of the second wavelength light and the detected quantity of the first wavelength light, the controller calculates a surface roughness of the semiconductor layer from at least one of the change in the detected quantity of the first wavelength light or the change in the detected quantity of the second wavelength light.