# US 2014/0192592 A1 · Sb-te-ti phase-change memory material and ti-sb2te3 phase-change memory material

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0192592 A1
- Document ID: US20140192592A1
- Status: Published application
- Kind: A1
- Application number: 13/885,894
- Filed: 2012-12-26
- Published: 2014-07-10
- Earliest claimed: 2012-03-21
- Assignees: Shanghai Institute of Microsystem and Information Technology, Chinese Academy
- Applicants: Shanghai Institute of Microsystem and Information Technology, Chinese Acadamy of Sciences
- Inventors: Liangcai Wu; Min Zhu; Zhitang Song; Feng Rao; Cheng Peng; Xilin Zhou; Kun Ren; Songlin Feng
- Web page: https://patentgrep.com/patent/US20140192592A1

## CPC

- G11C 13/0004: {comprising amorphous/crystalline phase transition cells}
- C23C 14/3414: {Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy}
- H10N 70/026: {by physical vapor deposition, e.g. sputtering}
- H10N 70/231: {based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect}
- H10N 70/8828: {Tellurides, e.g. GeSbTe}
- H10N 70/884: {based on at least one element of group IIIA, IVA or VA, e.g. elemental or compound semiconductors (compounds of sulfur, selenium or tellurium, e.g. chalcogenides H10N70/882; oxides or nitrides H10N70/883)}
- G11C: STATIC STORES (semiconductor memory devices H10B)
- C23C: COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion B21C23/22; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. B21D39/00, B23K; metallising of glass C03C; metallising mortars, concrete, artificial stone, ceramics or natural stone C04B41/00; enamelling of, or applying a vitreous layer to, metals C23D; treating metal surfaces or coating of metals by electrolysis or electrophoresis C25D; single-crystal film growth C30B; by metallising textiles D06M11/83; decorating textiles by locally metallising D06Q1/04)
- H10N: ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR

## Abstract

The present invention relates to an Sb—Te—Ti phase-change thin-film material applicable to a phase-change memory and preparation thereof. The Sb—Te—Ti phase-change memory material of the present invention is formed by doping an Sb—Te phase-change material with Ti, Ti forms bonds with both Sb and Te, and the Sb—Te—Ti phase-change memory material has a chemical formula SbxTeyTi100-x-y, where 0<x<80 and 0<y<100-x. When the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur. In a crystallization process of an Sb—Te phase-change material in the prior art, gain growth dominates, so the phase change rate is high, but the retention cannot meet industrial requirements.

## Claims

### Claim 1

An Sb—Te—Ti phase-change memory material for a phase-change memory, formed by doping an Sb—Te phase-change memory material with Ti, and having a chemical formula of SbxTeyTi100-x-y, wherein 0<x<80, and 0<y<100-x.

### Claim 2 (depends on 1)

The Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 1, wherein x satisfies 45≦x≦72, and y satisfies 5≦y≦45.

### Claim 3 (depends on 1)

The Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 1, wherein a resistivity of the Sb—Te—Ti phase-change memory material is reversibly changed under the action of an electric pulse.

### Claim 4 (depends on 1)

The Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 1, wherein an optical reflectivity of the Sb—Te—Ti phase-change memory material is reversibly changed under the action of a laser pulse.

### Claim 5 (depends on 1)

The Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 1, wherein the Sb—Te—Ti phase-change memory material is an Sb—Te—Ti phase-change thin-film material.

### Claim 6 (depends on 1)

The Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 1, wherein the Sb—Te phase-change memory material is an Sb2Te3 phase-change memory material, the Sb—Te—Ti phase-change memory material obtained by doping the Sb2Te3 phase-change memory material with Ti is a Ti—Sb2Te3 phase-change memory material, and in the chemical formula SbxTeyTi100-x-y, y=3/2x, and a percentage content of Ti atom is lower than 50%.

### Claim 7 (depends on 6)

The Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 6, wherein in the Ti—Sb2Te3 phase-change memory material, the percentage content of Ti atom is in the range of 2% and 20%.

### Claim 8 (depends on 6)

The Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 6, wherein in the Ti—Sb2Te3 phase-change memory material, Ti atoms replace Sb atoms, and phase separation does not occur.

### Claim 9 (depends on 6)

The Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 6, wherein in the Ti—Sb2Te3 phase-change memory material, as the content of the doped Ti increases, an amorphous state resistance of the Ti—Sb2Te3 phase-change memory material increases and then decreases.

### Claim 10 (depends on 1)

A preparation method of the Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 1, comprising: according to a ratio of Sb to Te in a chemical formula SbxTeyTi100-x-y, co-sputtering an SbxTey alloy target and a Ti target to obtain the Sb—Te—Ti phase-change memory material.

### Claim 11 (depends on 10)

The preparation method as in claim 10, wherein sputtering conditions of the co-sputtering are: in the process of co-sputtering, an Ar gas with a purity of 99.999% is fed at the same time, the SbxTey target adopts a radio frequency power supply, and the Ti target adopts a direct current power supply.

### Claim 12 (depends on 11)

The preparation method as in claim 11, wherein during co-sputtering, the SbxTey alloy target is started before the Ti target power supply is turned on.

### Claim 13 (depends on 11)

The preparation method as in claim 11, wherein power of the radio frequency power supply is 25 W, power of the direct current power supply is 15 W, and a co-sputtering duration is 15 to 50 minutes.

### Claim 14 (depends on 10)

The preparation method as in claim 10, wherein the obtained Sb—Te—Ti phase-change memory material is a phase-change thin-film material, and the thickness of the film is in the range of 100 nm to 250 nm.

### Claim 15 (depends on 1)

A phase-change memory unit based on the Sb—Te—Ti phase-change memory material as in claim 1.

### Claim 16 (depends on 15)

The phase-change memory unit as in claim 15, wherein the Sb—Te—Ti phase-change memory material is a Ti—Sb2Te3 phase-change memory material, as the content of doped Ti increases, a Reset voltage of the phase-change memory unit increases; as the content of doped Ti increases, a high resistance of the phase-change memory unit increases and then decreases, and a high-resistance-to-low-resistance ratio also increases and then decreases.

### Claim 17 (depends on 6)

A preparation method of the Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 6, comprising: according to a ratio of Sb to Te in a chemical formula SbxTeyTi100-x-y, co-sputtering an SbxTey alloy target and a Ti target to obtain the Sb—Te—Ti phase-change memory material.

### Claim 18 (depends on 9)

A preparation method of the Sb—Te—Ti phase-change memory material for a phase-change memory as in claim 9, comprising: according to a ratio of Sb to Te in a chemical formula SbxTeyTi100-x-y, co-sputtering an SbxTey alloy target and a Ti target to obtain the Sb—Te—Ti phase-change memory material.

### Claim 19 (depends on 6)

A phase-change memory unit based on the Sb—Te—Ti phase-change memory material as in claim 6.

### Claim 20 (depends on 9)

A phase-change memory unit based on the Sb—Te—Ti phase-change memory material as in claim 9.