# US 2014/0192587 A1 · Thermodynamic bit formed of two memristors

> Agents: this data is available as JSON from the patentgrep API and MCP server — see https://patentgrep.com/llms.txt

- Number: US 2014/0192587 A1
- Document ID: US20140192587A1
- Status: Published application
- Kind: A1
- Application number: 14/097,535
- Filed: 2013-12-05
- Published: 2014-07-10
- Earliest claimed: 2013-01-04
- Assignees: KnowmTech, LLC
- Applicants: KnowmTech, LLC
- Inventors: Alex Nugent
- Web page: https://patentgrep.com/patent/US20140192587A1

## CPC

- G11C 13/0033: {Disturbance prevention or evaluation; Refreshing of disturbed memory data}
- G11C 13/0007: {comprising metal oxide memory material, e.g. perovskites}
- G11C 13/004: {Reading or sensing circuits or methods}
- G11C 13/0002: {using resistive RAM [RRAM] elements}
- G11C 2213/74: Array wherein each memory cell has more than one access device
- G11C: STATIC STORES (semiconductor memory devices H10B)

## Abstract

A thermodynamic bit apparatus, method and system. A thermodynamic bit is a device that returns a true or false state with a probability that depends on its internal state, which can be controlled via the application of positive feedback. A thermodynamic bit can include two or more memristors connected in series. A forward bias can be applied to the thermodynamic bit to read the state of the thermodynamic bit. A negative feedback can be applied to the thermodynamic bit during application of a forward bias to the thermodynamic bit. Also, a reverse bias can be applied to the thermodynamic bit to refresh or reinforce the state of the thermodynamic bit.

## Claims

### Claim 1

A thermodynamic bit apparatus, comprising:
a thermodynamic bit comprising at least two memristors connected in series.

### Claim 2 (depends on 1)

The apparatus of claim 1 wherein a forward bias is applied to said thermodynamic bit to read a state of said thermodynamic bit.

### Claim 3 (depends on 1)

The apparatus of claim 1 wherein a negative feedback is applied to said thermodynamic bit during an application of a forward bias to said thermodynamic bit.

### Claim 4 (depends on 1)

The apparatus of claim 1 wherein a reverse bias is applied to said thermodynamic bit to refresh or reinforce a state of said thermodynamic bit.

### Claim 5 (depends on 1)

The apparatus of claim 1 wherein:
a forward bias is applied to said thermodynamic bit to read a state of said thermodynamic bit; and
a negative feedback is applied to said thermodynamic bit during an application of said forward bias.

### Claim 6 (depends on 1)

The apparatus of claim 1 wherein:
a negative feedback is applied to said thermodynamic bit during an application of a forward bias to said thermodynamic bit; and
a reverse bias is applied to said thermodynamic bit to refresh or reinforce a state of said thermodynamic bit.

### Claim 7 (depends on 1)

The apparatus of claim 1 wherein:
a forward bias is applied to said thermodynamic bit to read a state of said thermodynamic bit;
a negative feedback is applied to said thermodynamic bit during an application of said forward bias; and
a reverse bias is applied to said thermodynamic bit to refresh or reinforce said state of said thermodynamic bit.

### Claim 8 (depends on 1)

The apparatus of claim 1 wherein said at least two memristors comprise at least one meta-stable switching element.

### Claim 9

A method of configuring a thermodynamic bit, said method comprising:
connecting at least two memristors in series to comprise a thermodynamic bit.

### Claim 10 (depends on 9)

The method of claim 9 further comprising applying a forward bias to said thermodynamic bit to read a state of said thermodynamic bit.

### Claim 11 (depends on 9)

The method of claim 9 further comprising applying a negative feedback to said thermodynamic bit during an application of a forward bias to said thermodynamic bit.

### Claim 12 (depends on 9)

The method of claim 9 further comprising applying a reverse bias to said thermodynamic bit to refresh or reinforce a state of said thermodynamic bit.

### Claim 13 (depends on 9)

The method of claim 9 further comprising:
applying a forward bias to said thermodynamic bit to read a state of said thermodynamic bit; and
applying a negative feedback to said thermodynamic bit during an application of said forward bias.

### Claim 14 (depends on 9)

The method of claim 9 further comprising:
applying a negative feedback to said thermodynamic bit during an application of a forward bias to said thermodynamic bit; and
applying a reverse bias to said thermodynamic bit to refresh or reinforce a state of said thermodynamic bit.

### Claim 15 (depends on 9)

The method of claim 9 further comprising:
applying a forward bias to said thermodynamic bit to read a state of said thermodynamic bit;
applying a negative feedback to said thermodynamic bit during an application of said forward bias; and
applying a reverse bias to said thermodynamic bit to refresh or reinforce said state of said thermodynamic bit.

### Claim 16 (depends on 9)

The method of claim 9 wherein said at least two memristors comprise at least one meta-stable switching element.

### Claim 17

A thermodynamic bit system, comprising:
a thermodynamic bit comprising at least two memristors connected in series, wherein said at least two memristors comprise a plurality of meta-stable switching elements.

### Claim 18 (depends on 17)

The system of claim 17 wherein a forward bias is applied to said thermodynamic bit to read a state of said thermodynamic bit.

### Claim 19 (depends on 17)

The system of claim 17 wherein a negative feedback is applied to said thermodynamic bit during an application of a forward bias to said thermodynamic bit.

### Claim 20 (depends on 17)

The system of claim 17 wherein a reverse bias is applied to said thermodynamic bit to refresh or reinforce a state of said thermodynamic bit.