# US 2014/0192486 A1 · Power module substrate, power module substrate with heat sink, power module, and method of manufacturing power module substrate

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- Number: US 2014/0192486 A1
- Document ID: US20140192486A1
- Status: Published application
- Kind: A1
- Application number: 14/238,097
- Filed: 2012-08-10
- Published: 2014-07-10
- Earliest claimed: 2011-08-12
- Assignees: Mitsubishi Materials Corporation
- Inventors: Yoshirou Kuromitsu; Yoshiyuki Nagatomo; Nobuyuki Terasaki; Toshio Sakamoto; Kazunari Maki; Hiroyuki Mori; Isao Arai
- Web page: https://patentgrep.com/patent/US20140192486A1

## CPC

- H05K 3/103: {by bonding or embedding conductive wires or strips}
- B23K 35/0222: {for use in soldering or brazing (B23K35/0205 takes precedence)}
- B23K 35/0233: {Sheets or foils (B23K35/0244 takes precedence)}
- B23K 35/0238: {layered}
- B23K 35/262: {Sn as the principal constituent}
- B23K 35/3006: {Ag as the principal constituent}
- C04B 35/645: Pressure sintering
- C04B 37/021: {in a direct manner, e.g. direct copper bonding [DCB]}
- C04B 37/025: {consisting of glass or ceramic material}
- C04B 37/026: {consisting of metals or metal salts}
- C22C 9/00: Alloys based on copper
- C22C 13/00: Alloys based on tin
- C22C 21/00: Alloys based on aluminium
- H05K 1/0204: {using means for thermal conduction connection in the thickness direction of the substrate (H05K1/0207 takes precedence)}
- H05K 1/09: Use of materials for the {conductive, e.g. } metallic pattern
- H05K 3/38: Improvement of the adhesion between the insulating substrate and the metal
- H10W 40/255: {having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates}
- H10W 40/258: {Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence)}
- C04B 2237/064: based on alumina or aluminates
- C04B 2237/121: based on aluminium
- C04B 2237/124: based on copper
- C04B 2237/125: based on noble metals, e.g. silver
- C04B 2237/127: The active component for bonding being a refractory metal
- C04B 2237/343: Alumina or aluminates
- C04B 2237/366: Aluminium nitride
- C04B 2237/402: Aluminium
- C04B 2237/407: Copper
- C04B 2237/54: Oxidising the surface before joining
- C04B 2237/60: Forming at the joining interface or in the joining layer specific reaction phases or zones, e.g. diffusion of reactive species from the interlayer to the substrate or from a substrate to the joining interface, carbide forming at the joining interface
- C04B 2237/704: of one or more of the ceramic layers or articles
- C04B 2237/706: of one or more of the metallic layers or articles
- C04B 2237/708: of one or more of the interlayers
- C04B 2237/86: Joining of two substrates at their largest surfaces, one surface being complete joined and covered, the other surface not, e.g. a small plate joined at it's largest surface on top of a larger plate
- H05K 1/0306: {Inorganic insulating substrates, e.g. ceramic, glass}
- H05K 3/0061: {onto a metallic substrate, e.g. a heat sink (heat sinks for electric apparatus H05K7/20)}
- H10W 72/352: {comprising metals or metalloids, e.g. solders}
- H10W 72/952: {comprising metals or metalloids, e.g. PbSn, Ag or Cu}
- H10W 90/734: {between a chip and a stacked insulating package substrate, interposer or RDL}
- Y10T 29/49155: Manufacturing circuit on or in base
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- B23K: SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- C04B: LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE {(roofing granules E04D7/005)}; CERAMICS (devitrified glass-ceramics C03C10/00); REFRACTORIES; TREATMENT OF NATURAL STONE
- C22C: ALLOYS (treatment of alloys C21D, C22F)
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

A power module substrate includes an insulating substrate, and a circuit layer that is formed on one surface of the insulating substrate. The circuit layer is formed by bonding a first copper plate onto one surface of the insulating substrate. Prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

## Claims

### Claim 1

A power module substrate, the substrate comprising:
an insulating substrate; and
a circuit layer that is formed on one surface of the insulating substrate,
wherein the circuit layer is formed by bonding a first copper plate onto the one surface of the insulating substrate, and
prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

### Claim 2 (depends on 1)

The power module substrate according to claim 1, further comprising:
a metal layer that is formed on the other surface of the insulating substrate,
wherein the metal layer is formed by bonding an aluminum plate onto the other surface of the insulating substrate.

### Claim 3 (depends on 1)

The power module substrate according to claim 1,
wherein prior to bonding, the first copper plate that forms the circuit layer has a composition containing at least either a total of 3 to 50 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 300 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

### Claim 4 (depends on 1)

The power module substrate according to claim 1,
wherein in the first copper plate that forms the circuit layer, the content of oxygen is set to 1 ppm by mass or less.

### Claim 5 (depends on 2)

The power module substrate according to claim 2,
wherein in the metal layer, any one or more kinds of additive elements among Si, Cu, Ag, Zn, Mg, Ge, Ca, Ga, and Li are contained in a bonding interface with the insulating substrate in a solid solution state, and
the total concentration of the additive elements in the metal layer in the vicinity of the bonding interface is set in a range of 0.01 to 5% by mass.

### Claim 6 (depends on 2)

The power module substrate according to claim 2,
wherein in the metal layer, a high additive-element concentration portion, in which the concentration of any one or more kinds of the additive elements among Si, Cu, Ag, Zn, Mg, Ge, Ca, Ga, and Li is set to two or more times the concentration of the additive elements in the metal layer, is formed at the bonding interface with the insulating substrate.

### Claim 7 (depends on 1)

The power module substrate according to claim 1, further comprising:
a metal layer that is formed on the other surface of the insulating substrate,
wherein the metal layer is formed by bonding a second copper plate to the other surface of the insulating substrate, and
prior to bonding, the second copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

### Claim 8 (depends on 7)

The power module substrate according to claim 7,
wherein prior to bonding, at least one of the first copper plate and the second copper plate has a composition containing at least either a total of 3 to 50 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 300 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities.

### Claim 9 (depends on 7)

The power module substrate according to any claim 7,
wherein in at least one of the first copper plate and the second copper plate, the content of oxygen is set to 1 ppm by mass or less.

### Claim 10 (depends on 1)

A power module substrate with a heat sink, the substrate comprising:
the power module substrate according to claim 1; and
a heat sink that is provided on the other surface side of the insulating substrate.

### Claim 11 (depends on 10)

A power module with a heat sink, comprising:
the power module substrate with a heat sink according to claim 10; and
an electronic component that is mounted on the circuit layer.

### Claim 12 (depends on 9)

A power module comprising:
the power module substrate according to claim 9; and
an electronic component that is mounted on the circuit layer.

### Claim 13

A method of manufacturing a power module substrate which is provided with an insulating substrate, a circuit layer formed on one surface of the insulating substrate, and a metal layer formed on the other surface of the insulating substrate, in which the circuit layer is formed by bonding a first copper plate onto the one surface of the insulating substrate, the metal layer is formed by bonding an aluminum plate onto the other surface of the insulating substrate, and prior to bonding, the first copper plate has a composition containing at least either a total of 1 to 100 mol ppm of one or more kinds among an alkaline-earth element, a transition metal element, and a rare-earth element, or 100 to 1000 mol ppm of boron, the remainder being copper and unavoidable impurities, the method comprising:
a circuit layer forming process of forming the circuit layer by bonding the first copper plate onto the one surface of the insulating substrate; and
a first metal layer forming process of forming the metal layer by bonding the aluminum plate onto the other surface of the insulating substrate,
wherein in the first metal layer forming process, any one or more kinds of additive elements among Si, Cu, Ag, Zn, Mg, Ge, Ca, Ga, and Li are disposed at a bonding interface of the aluminum plate, and then the aluminum plate is bonded.

### Claim 14 (depends on 7)

A power module substrate with a heat sink, the substrate comprising:
the power module substrate according to claim 7; and
a heat sink that is provided on the other surface side of the insulating substrate.

### Claim 15 (depends on 14)

A power module with a heat sink, comprising:
the power module substrate with a heat sink according to claim 14; and
an electronic component that is mounted on the circuit layer.

### Claim 16 (depends on 7)

A power module comprising:
the power module substrate according to claim 7; and
an electronic component that is mounted on the circuit layer.