# US 2014/0192473 A1 · Variable stiffness chassis for ultrathin devices

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- Number: US 2014/0192473 A1
- Document ID: US20140192473A1
- Status: Published application
- Kind: A1
- Application number: 13/734,572
- Filed: 2013-01-04
- Published: 2014-07-10
- Earliest claimed: 2013-01-04
- Assignees: Dell Products L.P.
- Applicants: Dell Products L.P.
- Inventors: Deeder M. Aurongzeb
- Web page: https://patentgrep.com/patent/US20140192473A1

## CPC

- H05K 13/00: Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
- G06F 1/1626: {with a single-body enclosure integrating a flat display, e.g. Personal Digital Assistants [PDAs]}
- Y10T 29/49002: Electrical device making
- Y10T 29/49004: including measuring or testing of device or component part
- H05K: PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- G06F: ELECTRIC DIGITAL DATA PROCESSING (computer systems based on specific computational models G06N)
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

An information handling system (IHS) chassis includes a chassis base. A center portion of the chassis base comprises at least ninety-five weight percent of a first metal element that is one of Aluminum or Magnesium. An edge section of the chassis base extends around the circumference of the chassis base adjacent the center portion. The edge section is comprised of an alloyed material that includes the first metal element and at least five weight percent of at least one second metal element that is selected from the group including Lithium, Titanium, Tungsten, Chromium, Hafnium, Lanthanum, and Ytterbium. The center portion and the edge section may comprise a first layer of the chassis base, and a second layer may be bonded to the first layer. In one example including the second layer, the first metal element is Magnesium and the second layer is at least ninety-five weight percent of Aluminum.

## Claims

### Claim 1

An information handling system (IHS) chassis, comprising
a chassis base;
a center portion of the chassis base, wherein the center portion comprises at least ninety-five weight percent of a first metal element that is one of Aluminum or Magnesium; and
an edge section of the chassis base that extends around the circumference of the chassis base adjacent the center portion, wherein the edge section is comprised of an alloyed material that includes the first metal element and at least five weight percent of at least one second metal element that is selected from the group including Lithium, Titanium, Tungsten, Chromium, Hafnium, Lanthanum, and Ytterbium.

### Claim 2 (depends on 1)

The IHS chassis of claim 1, wherein the alloyed material of the edge section includes at most twenty weight percent of Lithium.

### Claim 3 (depends on 1)

The IHS chassis of claim 1, wherein the alloyed material of the edge section includes at most twenty weight percent of Lithium and at most five weight percent of Lanthanum or Ytterbium.

### Claim 4 (depends on 1)

The IHS chassis of claim 1, wherein the alloyed material of the edge section includes at most twenty weight percent of Lithium and at most five weight percent of Hafnium.

### Claim 5 (depends on 1)

The IHS chassis of claim 1, wherein the center portion and the edge section comprise a first layer of the chassis base, the first metal element is Magnesium, and the IHS chassis further comprises:
a second layer that is bonded to the first layer and that is comprised of at least ninety-five weight percent of Aluminum.

### Claim 6 (depends on 5)

The IHS chassis of claim 5, wherein the second layer is an Aluminum foam material.

### Claim 7 (depends on 5)

The IHS chassis of claim 5, further comprising:
an interlayer positioned between the first layer and the second layer.

### Claim 8

An information handling system (IHS) comprising:
an IHS chassis housing a processor and a memory that is coupled to the processor;
a center portion of the IHS chassis, wherein the center portion comprises at least ninety-five weight percent of a first metal element that is one of Aluminum or Magnesium; and
an edge section of the IHS chassis that extends around the circumference of the IHS chassis adjacent the center portion, wherein the edge section is comprised of an alloyed material that includes the first metal element and at least five weight percent of at least one second metal element that is selected from the group including Lithium, Titanium, Tungsten, Chromium, Hafnium, Lanthanum, and Ytterbium.

### Claim 9 (depends on 8)

The IHS of claim 8, wherein the alloyed material of the edge section includes at most twenty weight percent of Lithium.

### Claim 10 (depends on 8)

The IHS of claim 8, wherein the alloyed material of the edge section includes at most twenty weight percent of Lithium and at most five weight percent of Lanthanum or Ytterbium.

### Claim 11 (depends on 8)

The IHS of claim 8, wherein the alloyed material of the edge section includes at most twenty weight percent of Lithium and at most five weight percent of Hafnium.

### Claim 12 (depends on 8)

The IHS of claim 8, wherein the center portion and the edge section comprise a first layer of the chassis base, the first metal element is Magnesium, and the IHS chassis further comprises:
a second layer that is bonded to the first layer and that is comprised of at least ninety-five weight percent of Aluminum.

### Claim 13 (depends on 12)

The IHS of claim 12, wherein the second layer is an Aluminum foam material.

### Claim 14 (depends on 12)

The IHS of claim 12, further comprising:
an interlayer positioned between the first layer and the second layer.

### Claim 15

A method for providing an IHS chassis, comprising:
providing a chassis base that is comprised of at least ninety-five weight percent of a first metal element that is one of Aluminum or Magnesium;
selectively doping the chassis base at an edge section, which extends around the circumference of the chassis base and that is located adjacent a center portion of the chassis base, with at least five weight percent of at least one second metal element that is selected from the group including Lithium, Titanium, Tungsten, Chromium, Hafnium, Lanthanum, and Ytterbium, such that the center portion is not doped with the at least one second metal element; and
heat treating the chassis base such that the center portion of the chassis base is comprised of at least ninety-five weight percent of the first metal element and the edge portion of the chassis base is comprised of at least five weight percent of the at least one second metal element.

### Claim 16 (depends on 15)

The method of claim 15, wherein the selectively doping includes selectively doping the chassis base at the edge section with one second metal element selected from the group consisting of at most twenty weight percent of Lithium, at most twenty weight percent of Lithium and at most five percent weight percent of Lanthanum or Ytterbium, and at most twenty percent Lithium and at most five percent Hafnium.

### Claim 17 (depends on 15)

The method of claim 15, wherein the center portion and the edge section of the chassis base are provided as a first layer of the chassis base, the first metal element is Magnesium, and the method further comprises:
bonding a second layer that comprises at least ninety-five weight percent of Aluminum to the first layer.

### Claim 18 (depends on 17)

The method of claim 17, further comprising:
providing an interlayer between the first layer and the second layer.

### Claim 19 (depends on 17)

The method of claim 17, wherein the first layer and the second layer are bonded using a diffusion bonding process, and the selectively doping includes selectively doping the chassis base at the edge section with at least one second metal element selected from the group consisting of at most twenty weight percent of lithium, at most twenty weight percent of lithium and at most five percent weight percent of Lanthanum or Ytterbium, and at most twenty percent lithium and at most five percent Hafnium.

### Claim 20 (depends on 17)

The method of claim 17, wherein the first layer and the second layer are bonded using a solid state reaction and the selectively doping includes selectively doping the chassis base at the edge section with at most twenty weight percent Lithium and at most five weight percent Hafnium.