# US 2014/0192452 A1 · Electrostatic discharge protection device and chip component with the same

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- Number: US 2014/0192452 A1
- Document ID: US20140192452A1
- Status: Published application
- Kind: A1
- Application number: 14/148,255
- Filed: 2014-01-06
- Published: 2014-07-10
- Earliest claimed: 2013-01-08
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Applicants: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Hong Ryul LEE; Kyong Bok MIN; Sung Kwon WI
- Web page: https://patentgrep.com/patent/US20140192452A1

## CPC

- H05F 3/04: by means of spark gaps or other discharge devices (devices providing for corona discharge per se H01T19/00)
- H10W 42/60: protecting against electrostatic charges or discharges, e.g. Faraday shields (integrated devices comprising arrangements for electrical protection H10D89/60)
- H05F: STATIC ELECTRICITY; NATURALLY-OCCURRING ELECTRICITY
- H10W: GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10

## Abstract

Disclosed herein is an electrostatic discharge protection device including: a lower cover; electrodes disposed on the lower cover, being spaced apart from each other; a conductor disposed on the lower cover; and a semiconducting material layer covering the lower cover and the electrodes and formed of a semiconducting material.

## Claims

### Claim 1

An electrostatic discharge protective device, comprising:
a lower cover;
electrodes disposed on the lower cover, being spaced apart from each other;
a conductor disposed on the lower cover; and
a semiconducting material layer covering the lower cover and the electrodes and formed of a semiconducting material.

### Claim 2 (depends on 1)

The electrostatic discharge protective device according to claim 1, wherein the conductor is provided on a boundary surface between the lower cover and the semiconducting material layer in a thin film form and
the semiconducting material layer covers the conductor.

### Claim 3 (depends on 1)

The electrostatic discharge protective device according to claim 1, wherein the semiconducting material layer covers the lower cover and the electrodes and
the conductor is distributed within the semiconducting material layer.

### Claim 4 (depends on 1)

The electrostatic discharge protective device according to claim 1, wherein the semiconducting material includes a polymer material satisfying an electric conductivity (Ω−1 cm−1) of 10−9 to 103.

### Claim 5 (depends on 1)

The electrostatic discharge protective device according to claim 1, wherein the semiconducting material includes at least any one of polyacetylene, poly (p-phenylene) (PPP), polypyrrole (PYR), and polyazine (PAZ).

### Claim 6 (depends on 1)

The electrostatic discharge protective device according to claim 1, wherein the semiconducting material layer includes a polymer material and additives and
the additives include at least any one dopant of halogen, lewis acid, and protonic acid.

### Claim 7 (depends on 1)

The electrostatic discharge protective device according to claim 1, wherein the semiconducting material layer includes a polymer material and additives and
the additives include at least any one dopant of O2, XeF2, AgClO4, AgBF4, and No2BF2.

### Claim 8 (depends on 1)

The electrostatic discharge protective device according to claim 1, wherein the conductor includes at least any one of palladium (Pd), rhodium (Rh), silver (Ag), gold (Au), cobalt (Co), nickel (Ni), and copper (Cu).

### Claim 9 (depends on 1)

The electrostatic discharge protective device according to claim 1, further comprising:
an upper cover covering the semiconducting material layer,
wherein the upper cover is formed of the same material as the lower cover.

### Claim 10

A chip component, comprising:
a noise filter; and
an electrostatic discharge protection device included in the noise filter,
wherein the electrostatic discharge protection device includes:
a lower cover;
electrodes disposed on the lower cover, being spaced apart from each other;
a conductor disposed on the lower cover; and
a semiconducting material layer covering the lower cover and the electrodes and formed of a semiconducting material.

### Claim 11 (depends on 10)

The chip component according to claim 10, wherein the noise filter includes:
a ferrite substrate;
a coil electrode disposed on the ferrite substrate;
an external electrode connected with the coil electrode in an edge region of the ferrite substrate; and
a filled material covering the coil electrode exposed by the external electrode.

### Claim 12 (depends on 10)

The chip component according to claim 10, wherein the conductor is provided on a boundary surface between the lower cover and the semiconducting material layer in a thin film form and
the semiconducting material layer covers the conductor.

### Claim 13 (depends on 10)

The chip component according to claim 10, wherein the semiconducting material layer covers the lower cover and the electrodes and
the conductor is distributed in the semiconducting material layer.

### Claim 14 (depends on 10)

The chip component according to claim 10, wherein the semiconducting material includes a polymer material that satisfies an electric conductivity (Ω−1 cm−1) of 10−9 to 103.

### Claim 15 (depends on 10)

The chip component according to claim 10, wherein the semiconducting material includes at least any one of polyacetylene, poly (p-phenylene) (PPP), polypyrrole (PYR), and polyazine (PAZ).

### Claim 16 (depends on 15)

The chip component according to claim 15, wherein the semiconducting material layer includes a polymer material and additives and
the additives include at least any one dopant of halogen, lewis acid, protonic acid, O2, XeF2, AgClO4, AgBF4, and No2BF2.