# US 2014/0192446 A1 · Electrostatic discharge protection device and method for manufacturing the same

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- Number: US 2014/0192446 A1
- Document ID: US20140192446A1
- Status: Published application
- Kind: A1
- Application number: 14/147,220
- Filed: 2014-01-03
- Published: 2014-07-10
- Earliest claimed: 2013-01-04
- Assignees: Samsung Electro-Mechanics Co., Ltd.
- Applicants: Samsung Electro-Mechanics Co., Ltd.
- Inventors: Sung Kwon WI; Young Seuck YOO; Kyong Bok MIN; Won Chul SIM; Young Do KWEON
- Web page: https://patentgrep.com/patent/US20140192446A1

## CPC

- H01T 4/12: hermetically sealed
- H01C 7/12: Overvoltage protection resistors; Arresters
- Y10T 29/49002: Electrical device making
- H01T: SPARK GAPS; OVERVOLTAGE ARRESTERS USING SPARK GAPS; SPARKING PLUGS; CORONA DEVICES; GENERATING IONS TO BE INTRODUCED INTO NON-ENCLOSED GASES (overvoltage protection circuits H02H)
- H01C: RESISTORS
- Y10T: TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

## Abstract

Disclosed herein is an electrostatic discharge protection device including: a substrate; electrodes disposed to be spaced apart from each other on the substrate; and an electrostatic discharge absorbing layer having atypical metal lumps formed on the substrate.

## Claims

### Claim 1

An electrostatic discharge protection device comprising:
a substrate;
electrodes disposed to be spaced apart from each other on the substrate; and
an electrostatic discharge absorbing layer having atypical metal lumps formed on the substrate.

### Claim 2 (depends on 1)

The electrostatic discharge protection device according to claim 1, wherein each of the metal lumps is made of any one metal selected from a group consisting of palladium (Pd), rhodium (Rh), silver (Ag), gold (Au), cobalt (Co), nickel (Ni), and copper (Cu).

### Claim 3 (depends on 1)

The electrostatic discharge protection device according to claim 1, further comprising an insulating layer covering the substrate and the electrodes, wherein the metal lumps are formed along an interface between the substrate and the insulating layer.

### Claim 4 (depends on 1)

The electrostatic discharge protection device according to claim 1, wherein the metal lumps are irregularly distributed on the substrate and the electrode.

### Claim 5 (depends on 1)

The electrostatic discharge protection device according to claim 1, wherein the metal lumps have a width of 50 nm to 1 μm.

### Claim 6 (depends on 1)

The electrostatic discharge protection device according to claim 1, wherein an occupied area of the metal lumps is 5 to 85% with respect to the substrate.

### Claim 7 (depends on 1)

The electrostatic discharge protection device according to claim 1, wherein the metal lumps are results formed by performing heat treatment on a metal thin film covering the substrate.

### Claim 8 (depends on 1)

The electrostatic discharge protection device according to claim 1, further comprising an insulating layer covering the electrodes, wherein the insulating layer is made of a resin based material.

### Claim 9

A method for manufacturing an electrostatic discharge protection device, the method comprising:
preparing a substrate;
forming electrodes disposed to be spaced apart from each other on the substrate;
forming a metal thin film covering the substrate; and
heat-treating the metal thin film to transform the metal thin film into atypical metal lumps.

### Claim 10 (depends on 9)

The method according to claim 9, wherein in the forming of the metal thin film, at least any one of a sputtering process, an electron beam evaporation process, a thermal evaporation process, a laser molecular beam epitaxy (L-MBE) process, and a pulsed laser deposition (PLD) is performed.

### Claim 11 (depends on 9)

The method according to claim 9, wherein the metal thin film is formed to have a thickness of 10 nm to 200 nm.

### Claim 12 (depends on 9)

The method according to claim 9, wherein the heat-treating of the metal thin film includes heating the metal thin film at a temperature of 300 to 500° C.

### Claim 13 (depends on 9)

The method according to claim 9, wherein the heat-treating of the metal thin film is performed so that the metal lumps has a width of 50 nm to 1 μm.

### Claim 14 (depends on 9)

The method according to claim 9, wherein the heat-treating of the metal thin film is performed so that an occupied area of the metal lumps is 5 to 85% with respect to the substrate.